Technische Details NTP150N65S3HF ON Semiconductor
Description: ONSEMI - NTP150N65S3HF - Leistungs-MOSFET, n-Kanal, 650 V, 24 A, 0.121 ohm, TO-220, Durchsteckmontage, tariffCode: 85412900, Transistormontage: Durchsteckmontage, Drain-Source-Spannung Vds: 650, Dauer-Drainstrom Id: 24, hazardous: false, Qualifikation: -, MSL: MSL 1 - unbegrenzt, usEccn: EAR99, Verlustleistung Pd: 192, Gate-Source-Schwellenspannung, max.: 5, euEccn: NLR, Verlustleistung: 192, Bauform - Transistor: TO-220, Anzahl der Pins: 3, Produktpalette: SUPERFET III FRFET, Wandlerpolarität: n-Kanal, Kanaltyp: n-Kanal, Betriebswiderstand, Rds(on): 0.121, Rds(on)-Prüfspannung: 10, Betriebstemperatur, max.: 150, Drain-Source-Durchgangswiderstand: 0.121, SVHC: Lead (10-Jun-2022).
Weitere Produktangebote NTP150N65S3HF nach Preis ab 4.52 EUR bis 11.25 EUR
| Foto | Bezeichnung | Hersteller | Beschreibung | Verfügbarkeit | Privatkunde | ||||||||
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NTP150N65S3HF | onsemi |
 MOSFETs Pwr MOSFET N-Chn SUPERFET III |
auf Bestellung 703 Stücke: Lieferzeit 10-14 Tag (e) |
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NTP150N65S3HF | onsemi |
Description: MOSFET N-CH 650V 24A TO220-3 Packaging: Tube Package / Case: TO-220-3 Mounting Type: Through Hole Operating Temperature: -55°C ~ 150°C (TJ) Technology: MOSFET (Metal Oxide) FET Type: N-Channel Current - Continuous Drain (Id) @ 25°C: 24A (Tc) Rds On (Max) @ Id, Vgs: 150mOhm @ 12A, 10V Power Dissipation (Max): 192W (Tc) Vgs(th) (Max) @ Id: 5V @ 540µA Supplier Device Package: TO-220-3 Part Status: Not For New Designs Drive Voltage (Max Rds On, Min Rds On): 10V Vgs (Max): ±30V Drain to Source Voltage (Vdss): 650 V Gate Charge (Qg) (Max) @ Vgs: 43 nC @ 10 V Input Capacitance (Ciss) (Max) @ Vds: 1985 pF @ 400 V |
auf Bestellung 509 Stücke: Lieferzeit 10-14 Tag (e) |
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| NTP150N65S3HF | ON Semiconductor |
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auf Bestellung 19 Stücke: Lieferzeit 21-28 Tag (e) |
Im Einkaufswagen Stück im Wert von UAH |
| NTP150N65S3HF |
|
Hersteller: onsemi
MOSFETs Pwr MOSFET N-Chn SUPERFET III
MOSFETs Pwr MOSFET N-Chn SUPERFET III
auf Bestellung 703 Stücke:
Lieferzeit 10-14 Tag (e)
| Anzahl | Privatkunde |
|---|---|
| 1+ | 10.64 EUR |
| 10+ | 5.87 EUR |
| 100+ | 5.11 EUR |
| 500+ | 4.52 EUR |
| NTP150N65S3HF |
|
Hersteller: onsemi
Description: MOSFET N-CH 650V 24A TO220-3
Packaging: Tube
Package / Case: TO-220-3
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 24A (Tc)
Rds On (Max) @ Id, Vgs: 150mOhm @ 12A, 10V
Power Dissipation (Max): 192W (Tc)
Vgs(th) (Max) @ Id: 5V @ 540µA
Supplier Device Package: TO-220-3
Part Status: Not For New Designs
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±30V
Drain to Source Voltage (Vdss): 650 V
Gate Charge (Qg) (Max) @ Vgs: 43 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 1985 pF @ 400 V
Description: MOSFET N-CH 650V 24A TO220-3
Packaging: Tube
Package / Case: TO-220-3
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 24A (Tc)
Rds On (Max) @ Id, Vgs: 150mOhm @ 12A, 10V
Power Dissipation (Max): 192W (Tc)
Vgs(th) (Max) @ Id: 5V @ 540µA
Supplier Device Package: TO-220-3
Part Status: Not For New Designs
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±30V
Drain to Source Voltage (Vdss): 650 V
Gate Charge (Qg) (Max) @ Vgs: 43 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 1985 pF @ 400 V
auf Bestellung 509 Stücke:
Lieferzeit 10-14 Tag (e)
| Anzahl | Privatkunde |
|---|---|
| 2+ | 11.25 EUR |
| 50+ | 5.96 EUR |
| 100+ | 5.45 EUR |
| 500+ | 4.55 EUR |
| NTP150N65S3HF |
|
Hersteller: ON Semiconductor
auf Bestellung 19 Stücke:
Lieferzeit 21-28 Tag (e)