NTP2955
Hersteller:
auf Bestellung 4099 Stücke:
Lieferzeit 21-28 Tag (e)
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Technische Details NTP2955
Description: MOSFET P-CH 60V 2.4A TO220AB, Input Capacitance (Ciss) (Max) @ Vds: 700 pF @ 25 V, Gate Charge (Qg) (Max) @ Vgs: 14 nC @ 10 V, Drain to Source Voltage (Vdss): 60 V, Vgs (Max): ±20V, Drive Voltage (Max Rds On, Min Rds On): 10V, Part Status: Obsolete, Supplier Device Package: TO-220, Vgs(th) (Max) @ Id: 4V @ 250µA, Power Dissipation (Max): 2.4W (Ta), 62.5W (Tc), Rds On (Max) @ Id, Vgs: 196mOhm @ 12A, 10V, Current - Continuous Drain (Id) @ 25°C: 2.4A (Ta), FET Type: P-Channel, Technology: MOSFET (Metal Oxide), Operating Temperature: -55°C ~ 175°C (TJ), Mounting Type: Through Hole, Package / Case: TO-220-3, Packaging: Tube.
Weitere Produktangebote NTP2955
| Foto | Bezeichnung | Hersteller | Beschreibung |
Verfügbarkeit |
Preis |
|---|---|---|---|---|---|
 |
NTP2955 | onsemi |
Description: MOSFET P-CH 60V 2.4A TO220AB Input Capacitance (Ciss) (Max) @ Vds: 700 pF @ 25 V Gate Charge (Qg) (Max) @ Vgs: 14 nC @ 10 V Drain to Source Voltage (Vdss): 60 V Vgs (Max): ±20V Drive Voltage (Max Rds On, Min Rds On): 10V Part Status: Obsolete Supplier Device Package: TO-220 Vgs(th) (Max) @ Id: 4V @ 250µA Power Dissipation (Max): 2.4W (Ta), 62.5W (Tc) Rds On (Max) @ Id, Vgs: 196mOhm @ 12A, 10V Current - Continuous Drain (Id) @ 25°C: 2.4A (Ta) FET Type: P-Channel Technology: MOSFET (Metal Oxide) Operating Temperature: -55°C ~ 175°C (TJ) Mounting Type: Through Hole Package / Case: TO-220-3 Packaging: Tube |
Produkt ist nicht verfügbar |
Mindestbestellmenge: 950 Stücke Im Einkaufswagen Stück im Wert von UAH |
 |
NTP2955 | ON Semiconductor |
 MOSFET -60V -12A |
Produkt ist nicht verfügbar |
Im Einkaufswagen Stück im Wert von UAH |
| NTP2955 |
Hersteller: onsemi
Description: MOSFET P-CH 60V 2.4A TO220AB
Input Capacitance (Ciss) (Max) @ Vds: 700 pF @ 25 V
Gate Charge (Qg) (Max) @ Vgs: 14 nC @ 10 V
Drain to Source Voltage (Vdss): 60 V
Vgs (Max): ±20V
Drive Voltage (Max Rds On, Min Rds On): 10V
Part Status: Obsolete
Supplier Device Package: TO-220
Vgs(th) (Max) @ Id: 4V @ 250µA
Power Dissipation (Max): 2.4W (Ta), 62.5W (Tc)
Rds On (Max) @ Id, Vgs: 196mOhm @ 12A, 10V
Current - Continuous Drain (Id) @ 25°C: 2.4A (Ta)
FET Type: P-Channel
Technology: MOSFET (Metal Oxide)
Operating Temperature: -55°C ~ 175°C (TJ)
Mounting Type: Through Hole
Package / Case: TO-220-3
Packaging: Tube
Description: MOSFET P-CH 60V 2.4A TO220AB
Input Capacitance (Ciss) (Max) @ Vds: 700 pF @ 25 V
Gate Charge (Qg) (Max) @ Vgs: 14 nC @ 10 V
Drain to Source Voltage (Vdss): 60 V
Vgs (Max): ±20V
Drive Voltage (Max Rds On, Min Rds On): 10V
Part Status: Obsolete
Supplier Device Package: TO-220
Vgs(th) (Max) @ Id: 4V @ 250µA
Power Dissipation (Max): 2.4W (Ta), 62.5W (Tc)
Rds On (Max) @ Id, Vgs: 196mOhm @ 12A, 10V
Current - Continuous Drain (Id) @ 25°C: 2.4A (Ta)
FET Type: P-Channel
Technology: MOSFET (Metal Oxide)
Operating Temperature: -55°C ~ 175°C (TJ)
Mounting Type: Through Hole
Package / Case: TO-220-3
Packaging: Tube
Produkt ist nicht verfügbar
Mindestbestellmenge: 950 Stücke
Im Einkaufswagen
Stück im Wert von UAH
| NTP2955 |
|
Hersteller: ON Semiconductor
MOSFET -60V -12A
MOSFET -60V -12A
Produkt ist nicht verfügbar
Im Einkaufswagen
Stück im Wert von UAH