NTP4813NLG ON Semiconductor

Description: MOSFET N-CH 30V 10.2A TO220AB, Input Capacitance (Ciss) (Max) @ Vds: 895 pF @ 12 V, Gate Charge (Qg) (Max) @ Vgs: 17 nC @ 11.5 V, Drain to Source Voltage (Vdss): 30 V, Vgs (Max): ±20V, Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V, Supplier Device Package: TO-220-3, Vgs(th) (Max) @ Id: 2.5V @ 250µA, Power Dissipation (Max): 2.4W (Ta), 60W (Tc), Rds On (Max) @ Id, Vgs: 13.1mOhm @ 20A, 10V, Current - Continuous Drain (Id) @ 25°C: 10.2A (Ta), FET Type: N-Channel, Technology: MOSFET (Metal Oxide), Operating Temperature: -55°C ~ 175°C (TJ), Mounting Type: Through Hole, Package / Case: TO-220-3, Packaging: Tube.