NTP5860NLG ON Semiconductor
auf Bestellung 709 Stücke:
Lieferzeit 14-21 Tag (e)
| Anzahl | Preis |
|---|---|
| 143+ | 1.03 EUR |
| 193+ | 0.74 EUR |
| 500+ | 0.57 EUR |
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Technische Details NTP5860NLG ON Semiconductor
Description: MOSFET N-CH 60V 220A TO220AB, Packaging: Tube, Package / Case: TO-220-3, Mounting Type: Through Hole, Operating Temperature: -55°C ~ 175°C (TJ), Technology: MOSFET (Metal Oxide), FET Type: N-Channel, Current - Continuous Drain (Id) @ 25°C: 220A (Tc), Rds On (Max) @ Id, Vgs: 3mOhm @ 75A, 10V, Power Dissipation (Max): 283W (Tc), Vgs(th) (Max) @ Id: 4V @ 250µA, Supplier Device Package: TO-220, Drive Voltage (Max Rds On, Min Rds On): 10V, Vgs (Max): ±20V, Drain to Source Voltage (Vdss): 60 V, Gate Charge (Qg) (Max) @ Vgs: 180 nC @ 10 V, Input Capacitance (Ciss) (Max) @ Vds: 10760 pF @ 25 V.
Weitere Produktangebote NTP5860NLG nach Preis ab 0.55 EUR bis 1.63 EUR
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NTP5860NLG | Hersteller : ON Semiconductor |
 Trans MOSFET N-CH 60V 220A 3-Pin(3+Tab) TO-220AB Tube |
auf Bestellung 709 Stücke: Lieferzeit 14-21 Tag (e) |
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NTP5860NLG | Hersteller : onsemi |
Description: MOSFET N-CH 60V 220A TO220AB Packaging: Tube Package / Case: TO-220-3 Mounting Type: Through Hole Operating Temperature: -55°C ~ 175°C (TJ) Technology: MOSFET (Metal Oxide) FET Type: N-Channel Current - Continuous Drain (Id) @ 25°C: 220A (Tc) Rds On (Max) @ Id, Vgs: 3mOhm @ 75A, 10V Power Dissipation (Max): 283W (Tc) Vgs(th) (Max) @ Id: 4V @ 250µA Supplier Device Package: TO-220 Drive Voltage (Max Rds On, Min Rds On): 10V Vgs (Max): ±20V Drain to Source Voltage (Vdss): 60 V Gate Charge (Qg) (Max) @ Vgs: 180 nC @ 10 V Input Capacitance (Ciss) (Max) @ Vds: 10760 pF @ 25 V |
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