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NTP65N02R

NTP65N02R onsemi

ntb65n02r-d.pdf Hersteller: onsemi
Description: MOSFET N-CH 25V 7.6A/58A TO220AB
Packaging: Tube
Package / Case: TO-220-3
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 7.6A (Ta), 58A (Tc)
Rds On (Max) @ Id, Vgs: 10.5mOhm @ 20A, 10V
Power Dissipation (Max): 1.04W (Ta), 62.5W (Tc)
Vgs(th) (Max) @ Id: 2V @ 250µA
Supplier Device Package: TO-220
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 25 V
Gate Charge (Qg) (Max) @ Vgs: 9.5 nC @ 4.5 V
Input Capacitance (Ciss) (Max) @ Vds: 1330 pF @ 20 V
auf Bestellung 16392 Stücke:
Lieferzeit 10-14 Tag (e)
Anzahl Preis ohne MwSt
1480+0.32 EUR
Mindestbestellmenge: 1480
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Technische Details NTP65N02R onsemi

Description: MOSFET N-CH 25V 7.6A/58A TO220AB, Packaging: Tube, Package / Case: TO-220-3, Mounting Type: Through Hole, Operating Temperature: -55°C ~ 150°C (TJ), Technology: MOSFET (Metal Oxide), FET Type: N-Channel, Current - Continuous Drain (Id) @ 25°C: 7.6A (Ta), 58A (Tc), Rds On (Max) @ Id, Vgs: 10.5mOhm @ 20A, 10V, Power Dissipation (Max): 1.04W (Ta), 62.5W (Tc), Vgs(th) (Max) @ Id: 2V @ 250µA, Supplier Device Package: TO-220, Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V, Vgs (Max): ±20V, Drain to Source Voltage (Vdss): 25 V, Gate Charge (Qg) (Max) @ Vgs: 9.5 nC @ 4.5 V, Input Capacitance (Ciss) (Max) @ Vds: 1330 pF @ 20 V.

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NTP65N02R ntb65n02r-d.pdf
auf Bestellung 5750 Stücke:
Lieferzeit 21-28 Tag (e)
NTP65N02R Hersteller : ONSEMI ONSM-S-A0014426513-1.pdf?hkey=6D3A4C79FDBF58556ACFDE234799DDF0 Description: ONSEMI - NTP65N02R - NTP65N02R, SINGLE MOSFETS
tariffCode: 85412900
productTraceability: Yes-Date/Lot Code
rohsCompliant: YES
euEccn: NLR
hazardous: false
rohsPhthalatesCompliant: YES
usEccn: EAR99
SVHC: No SVHC (14-Jun-2023)
auf Bestellung 16392 Stücke:
Lieferzeit 14-21 Tag (e)
NTP65N02R NTP65N02R Hersteller : onsemi ntb65n02r-d.pdf Description: MOSFET N-CH 25V 7.6A/58A TO220AB
Packaging: Tube
Package / Case: TO-220-3
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 7.6A (Ta), 58A (Tc)
Rds On (Max) @ Id, Vgs: 10.5mOhm @ 20A, 10V
Power Dissipation (Max): 1.04W (Ta), 62.5W (Tc)
Vgs(th) (Max) @ Id: 2V @ 250µA
Supplier Device Package: TO-220
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 25 V
Gate Charge (Qg) (Max) @ Vgs: 9.5 nC @ 4.5 V
Input Capacitance (Ciss) (Max) @ Vds: 1330 pF @ 20 V
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