Technische Details NTP75N06G ON
Description: MOSFET N-CH 60V 75A TO220AB, Rds On (Max) @ Id, Vgs: 9.5mOhm @ 37.5A, 10V, Current - Continuous Drain (Id) @ 25°C: 75A (Ta), FET Type: N-Channel, Technology: MOSFET (Metal Oxide), Operating Temperature: -55°C ~ 175°C (TJ), Mounting Type: Through Hole, Package / Case: TO-220-3, Packaging: Tube, Vgs(th) (Max) @ Id: 4V @ 250µA, Power Dissipation (Max): 2.4W (Ta), 214W (Tj), Input Capacitance (Ciss) (Max) @ Vds: 4510 pF @ 25 V, Gate Charge (Qg) (Max) @ Vgs: 130 nC @ 10 V, Drain to Source Voltage (Vdss): 60 V, Vgs (Max): ±20V, Drive Voltage (Max Rds On, Min Rds On): 10V, Part Status: Obsolete, Supplier Device Package: TO-220.
Weitere Produktangebote NTP75N06G
| Foto | Bezeichnung | Hersteller | Beschreibung |
Verfügbarkeit |
Preis |
|---|---|---|---|---|---|
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NTP75N06G | onsemi |
Description: MOSFET N-CH 60V 75A TO220ABRds On (Max) @ Id, Vgs: 9.5mOhm @ 37.5A, 10V Current - Continuous Drain (Id) @ 25°C: 75A (Ta) FET Type: N-Channel Technology: MOSFET (Metal Oxide) Operating Temperature: -55°C ~ 175°C (TJ) Mounting Type: Through Hole Package / Case: TO-220-3 Packaging: Tube Vgs(th) (Max) @ Id: 4V @ 250µA Power Dissipation (Max): 2.4W (Ta), 214W (Tj) Input Capacitance (Ciss) (Max) @ Vds: 4510 pF @ 25 V Gate Charge (Qg) (Max) @ Vgs: 130 nC @ 10 V Drain to Source Voltage (Vdss): 60 V Vgs (Max): ±20V Drive Voltage (Max Rds On, Min Rds On): 10V Part Status: Obsolete Supplier Device Package: TO-220 |
Produkt ist nicht verfügbar |
Im Einkaufswagen Stück im Wert von UAH |
|
NTP75N06G | onsemi |
MOSFETs 60V 75A N-Channel |
Produkt ist nicht verfügbar |
Im Einkaufswagen Stück im Wert von UAH |
| NTP75N06G |
![]() |
Hersteller: onsemi
Description: MOSFET N-CH 60V 75A TO220AB
Rds On (Max) @ Id, Vgs: 9.5mOhm @ 37.5A, 10V
Current - Continuous Drain (Id) @ 25°C: 75A (Ta)
FET Type: N-Channel
Technology: MOSFET (Metal Oxide)
Operating Temperature: -55°C ~ 175°C (TJ)
Mounting Type: Through Hole
Package / Case: TO-220-3
Packaging: Tube
Vgs(th) (Max) @ Id: 4V @ 250µA
Power Dissipation (Max): 2.4W (Ta), 214W (Tj)
Input Capacitance (Ciss) (Max) @ Vds: 4510 pF @ 25 V
Gate Charge (Qg) (Max) @ Vgs: 130 nC @ 10 V
Drain to Source Voltage (Vdss): 60 V
Vgs (Max): ±20V
Drive Voltage (Max Rds On, Min Rds On): 10V
Part Status: Obsolete
Supplier Device Package: TO-220
Description: MOSFET N-CH 60V 75A TO220AB
Rds On (Max) @ Id, Vgs: 9.5mOhm @ 37.5A, 10V
Current - Continuous Drain (Id) @ 25°C: 75A (Ta)
FET Type: N-Channel
Technology: MOSFET (Metal Oxide)
Operating Temperature: -55°C ~ 175°C (TJ)
Mounting Type: Through Hole
Package / Case: TO-220-3
Packaging: Tube
Vgs(th) (Max) @ Id: 4V @ 250µA
Power Dissipation (Max): 2.4W (Ta), 214W (Tj)
Input Capacitance (Ciss) (Max) @ Vds: 4510 pF @ 25 V
Gate Charge (Qg) (Max) @ Vgs: 130 nC @ 10 V
Drain to Source Voltage (Vdss): 60 V
Vgs (Max): ±20V
Drive Voltage (Max Rds On, Min Rds On): 10V
Part Status: Obsolete
Supplier Device Package: TO-220
Produkt ist nicht verfügbar
Im Einkaufswagen
Stück im Wert von UAH
| NTP75N06G |
![]() |
Hersteller: onsemi
MOSFETs 60V 75A N-Channel
MOSFETs 60V 75A N-Channel
Produkt ist nicht verfügbar
Im Einkaufswagen
Stück im Wert von UAH



