NTP8G206NG ONSEMI
Hersteller: ONSEMI
Description: ONSEMI - NTP8G206NG - MOSFET, N-CH, 600V, 17A, TO-220-3
tariffCode: 85412900
productTraceability: Yes-Date/Lot Code
rohsCompliant: YES
euEccn: NLR
hazardous: false
rohsPhthalatesCompliant: YES
usEccn: EAR99
SVHC: No SVHC (14-Jun-2023)
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Technische Details NTP8G206NG ONSEMI
Description: GANFET N-CH 600V 17A TO220-3, Operating Temperature: -55°C ~ 150°C (TJ), Mounting Type: Through Hole, Package / Case: TO-220-3, Packaging: Tube, Input Capacitance (Ciss) (Max) @ Vds: 760 pF @ 480 V, Gate Charge (Qg) (Max) @ Vgs: 9.3 nC @ 4.5 V, Drain to Source Voltage (Vdss): 600 V, Vgs (Max): ±18V, Drive Voltage (Max Rds On, Min Rds On): 8V, Supplier Device Package: TO-220, Vgs(th) (Max) @ Id: 2.6V @ 500µA, Power Dissipation (Max): 96W (Tc), Rds On (Max) @ Id, Vgs: 180mOhm @ 11A, 8V, Current - Continuous Drain (Id) @ 25°C: 17A (Tc), FET Type: N-Channel, Technology: GaNFET (Gallium Nitride).
Weitere Produktangebote NTP8G206NG
| Foto | Bezeichnung | Hersteller | Beschreibung | Verfügbarkeit | Privatkunde |
|---|---|---|---|---|---|
 |
NTP8G206NG | onsemi |
Description: GANFET N-CH 600V 17A TO220-3 Operating Temperature: -55°C ~ 150°C (TJ) Mounting Type: Through Hole Package / Case: TO-220-3 Packaging: Tube Input Capacitance (Ciss) (Max) @ Vds: 760 pF @ 480 V Gate Charge (Qg) (Max) @ Vgs: 9.3 nC @ 4.5 V Drain to Source Voltage (Vdss): 600 V Vgs (Max): ±18V Drive Voltage (Max Rds On, Min Rds On): 8V Supplier Device Package: TO-220 Vgs(th) (Max) @ Id: 2.6V @ 500µA Power Dissipation (Max): 96W (Tc) Rds On (Max) @ Id, Vgs: 180mOhm @ 11A, 8V Current - Continuous Drain (Id) @ 25°C: 17A (Tc) FET Type: N-Channel Technology: GaNFET (Gallium Nitride) |
Produkt ist nicht verfügbar |
Mindestbestellmenge: 50 Stücke Im Einkaufswagen Stück im Wert von UAH |
 |
NTP8G206NG | ON Semiconductor |
MOSFET GAN 600V 17A 150MO |
Produkt ist nicht verfügbar |
Im Einkaufswagen Stück im Wert von UAH |
| NTP8G206NG |
|
Hersteller: onsemi
Description: GANFET N-CH 600V 17A TO220-3
Operating Temperature: -55°C ~ 150°C (TJ)
Mounting Type: Through Hole
Package / Case: TO-220-3
Packaging: Tube
Input Capacitance (Ciss) (Max) @ Vds: 760 pF @ 480 V
Gate Charge (Qg) (Max) @ Vgs: 9.3 nC @ 4.5 V
Drain to Source Voltage (Vdss): 600 V
Vgs (Max): ±18V
Drive Voltage (Max Rds On, Min Rds On): 8V
Supplier Device Package: TO-220
Vgs(th) (Max) @ Id: 2.6V @ 500µA
Power Dissipation (Max): 96W (Tc)
Rds On (Max) @ Id, Vgs: 180mOhm @ 11A, 8V
Current - Continuous Drain (Id) @ 25°C: 17A (Tc)
FET Type: N-Channel
Technology: GaNFET (Gallium Nitride)
Description: GANFET N-CH 600V 17A TO220-3
Operating Temperature: -55°C ~ 150°C (TJ)
Mounting Type: Through Hole
Package / Case: TO-220-3
Packaging: Tube
Input Capacitance (Ciss) (Max) @ Vds: 760 pF @ 480 V
Gate Charge (Qg) (Max) @ Vgs: 9.3 nC @ 4.5 V
Drain to Source Voltage (Vdss): 600 V
Vgs (Max): ±18V
Drive Voltage (Max Rds On, Min Rds On): 8V
Supplier Device Package: TO-220
Vgs(th) (Max) @ Id: 2.6V @ 500µA
Power Dissipation (Max): 96W (Tc)
Rds On (Max) @ Id, Vgs: 180mOhm @ 11A, 8V
Current - Continuous Drain (Id) @ 25°C: 17A (Tc)
FET Type: N-Channel
Technology: GaNFET (Gallium Nitride)
Produkt ist nicht verfügbar
Mindestbestellmenge: 50 Stücke
Im Einkaufswagen
Stück im Wert von UAH
| NTP8G206NG |
|
Hersteller: ON Semiconductor
MOSFET GAN 600V 17A 150MO
MOSFET GAN 600V 17A 150MO
Produkt ist nicht verfügbar
Im Einkaufswagen
Stück im Wert von UAH