| Anzahl | Preis |
|---|---|
| 5+ | 0.65 EUR |
| 10+ | 0.43 EUR |
| 100+ | 0.28 EUR |
| 500+ | 0.19 EUR |
| 3000+ | 0.18 EUR |
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Technische Details NTR3C21NZT1G onsemi
Description: MOSFET N-CH 20V 3.6A SOT23-3, Packaging: Tape & Reel (TR), Package / Case: TO-236-3, SC-59, SOT-23-3, Mounting Type: Surface Mount, Operating Temperature: -55°C ~ 150°C (TJ), Technology: MOSFET (Metal Oxide), FET Type: N-Channel, Current - Continuous Drain (Id) @ 25°C: 3.6A (Ta), Rds On (Max) @ Id, Vgs: 24mOhm @ 5A, 4.5V, Power Dissipation (Max): 470mW (Ta), Vgs(th) (Max) @ Id: 1V @ 250µA, Supplier Device Package: SOT-23-3 (TO-236), Part Status: Active, Drive Voltage (Max Rds On, Min Rds On): 1.8V, 4.5V, Vgs (Max): ±8V, Drain to Source Voltage (Vdss): 20 V, Gate Charge (Qg) (Max) @ Vgs: 17.8 nC @ 4.5 V, Input Capacitance (Ciss) (Max) @ Vds: 1540 pF @ 16 V.
Weitere Produktangebote NTR3C21NZT1G nach Preis ab 0.25 EUR bis 0.84 EUR
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NTR3C21NZT1G | onsemi |
 Description: MOSFET N-CH 20V 3.6A SOT23-3Input Capacitance (Ciss) (Max) @ Vds: 1540 pF @ 16 V Gate Charge (Qg) (Max) @ Vgs: 17.8 nC @ 4.5 V Drain to Source Voltage (Vdss): 20 V Vgs (Max): ±8V Drive Voltage (Max Rds On, Min Rds On): 1.8V, 4.5V Part Status: Active Supplier Device Package: SOT-23-3 (TO-236) Vgs(th) (Max) @ Id: 1V @ 250µA Power Dissipation (Max): 470mW (Ta) Rds On (Max) @ Id, Vgs: 24mOhm @ 5A, 4.5V Current - Continuous Drain (Id) @ 25°C: 3.6A (Ta) FET Type: N-Channel Technology: MOSFET (Metal Oxide) Operating Temperature: -55°C ~ 150°C (TJ) Mounting Type: Surface Mount Package / Case: TO-236-3, SC-59, SOT-23-3 Packaging: Cut Tape (CT) |
auf Bestellung 755 Stücke: Lieferzeit 10-14 Tag (e) |
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| NTR3C21NZT1G |
|
Hersteller: onsemi
Description: MOSFET N-CH 20V 3.6A SOT23-3
Input Capacitance (Ciss) (Max) @ Vds: 1540 pF @ 16 V
Gate Charge (Qg) (Max) @ Vgs: 17.8 nC @ 4.5 V
Drain to Source Voltage (Vdss): 20 V
Vgs (Max): ±8V
Drive Voltage (Max Rds On, Min Rds On): 1.8V, 4.5V
Part Status: Active
Supplier Device Package: SOT-23-3 (TO-236)
Vgs(th) (Max) @ Id: 1V @ 250µA
Power Dissipation (Max): 470mW (Ta)
Rds On (Max) @ Id, Vgs: 24mOhm @ 5A, 4.5V
Current - Continuous Drain (Id) @ 25°C: 3.6A (Ta)
FET Type: N-Channel
Technology: MOSFET (Metal Oxide)
Operating Temperature: -55°C ~ 150°C (TJ)
Mounting Type: Surface Mount
Package / Case: TO-236-3, SC-59, SOT-23-3
Packaging: Cut Tape (CT)
Description: MOSFET N-CH 20V 3.6A SOT23-3
Input Capacitance (Ciss) (Max) @ Vds: 1540 pF @ 16 V
Gate Charge (Qg) (Max) @ Vgs: 17.8 nC @ 4.5 V
Drain to Source Voltage (Vdss): 20 V
Vgs (Max): ±8V
Drive Voltage (Max Rds On, Min Rds On): 1.8V, 4.5V
Part Status: Active
Supplier Device Package: SOT-23-3 (TO-236)
Vgs(th) (Max) @ Id: 1V @ 250µA
Power Dissipation (Max): 470mW (Ta)
Rds On (Max) @ Id, Vgs: 24mOhm @ 5A, 4.5V
Current - Continuous Drain (Id) @ 25°C: 3.6A (Ta)
FET Type: N-Channel
Technology: MOSFET (Metal Oxide)
Operating Temperature: -55°C ~ 150°C (TJ)
Mounting Type: Surface Mount
Package / Case: TO-236-3, SC-59, SOT-23-3
Packaging: Cut Tape (CT)
auf Bestellung 755 Stücke:
Lieferzeit 10-14 Tag (e)| Anzahl | Preis |
|---|---|
| 21+ | 0.84 EUR |
| 34+ | 0.52 EUR |
| 100+ | 0.33 EUR |
| 500+ | 0.25 EUR |