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NTS4172NT1G

NTS4172NT1G onsemi

nts4172n-d.pdf Hersteller: onsemi
Description: MOSFET N-CH 30V 1.6A SC70-3
Packaging: Bulk
Package / Case: SC-70, SOT-323
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 1.6A (Ta)
Rds On (Max) @ Id, Vgs: 93mOhm @ 1.7A, 10V
Power Dissipation (Max): 294mW (Ta)
Vgs(th) (Max) @ Id: 1.4V @ 250µA
Supplier Device Package: SC-70-3 (SOT323)
Drive Voltage (Max Rds On, Min Rds On): 2.5V, 10V
Vgs (Max): ±12V
Drain to Source Voltage (Vdss): 30 V
Gate Charge (Qg) (Max) @ Vgs: 4.38 nC @ 4.5 V
Input Capacitance (Ciss) (Max) @ Vds: 381 pF @ 15 V
auf Bestellung 3000 Stücke:
Lieferzeit 10-14 Tag (e)
Anzahl Preis ohne MwSt
3000+0.16 EUR
Mindestbestellmenge: 3000
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Technische Details NTS4172NT1G onsemi

Description: MOSFET N-CH 30V 1.6A SC70-3, Packaging: Tape & Reel (TR), Package / Case: SC-70, SOT-323, Mounting Type: Surface Mount, Operating Temperature: -55°C ~ 150°C (TJ), Technology: MOSFET (Metal Oxide), FET Type: N-Channel, Current - Continuous Drain (Id) @ 25°C: 1.6A (Ta), Rds On (Max) @ Id, Vgs: 93mOhm @ 1.7A, 10V, Power Dissipation (Max): 294mW (Ta), Vgs(th) (Max) @ Id: 1.4V @ 250µA, Supplier Device Package: SC-70-3 (SOT323), Drive Voltage (Max Rds On, Min Rds On): 2.5V, 10V, Vgs (Max): ±12V, Drain to Source Voltage (Vdss): 30 V, Gate Charge (Qg) (Max) @ Vgs: 4.38 nC @ 4.5 V, Input Capacitance (Ciss) (Max) @ Vds: 381 pF @ 15 V.

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NTS4172NT1G nts4172n-d.pdf
auf Bestellung 36000 Stücke:
Lieferzeit 21-28 Tag (e)
NTS4172NT1G NTS4172NT1G Hersteller : onsemi nts4172n-d.pdf Description: MOSFET N-CH 30V 1.6A SC70-3
Packaging: Tape & Reel (TR)
Package / Case: SC-70, SOT-323
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 1.6A (Ta)
Rds On (Max) @ Id, Vgs: 93mOhm @ 1.7A, 10V
Power Dissipation (Max): 294mW (Ta)
Vgs(th) (Max) @ Id: 1.4V @ 250µA
Supplier Device Package: SC-70-3 (SOT323)
Drive Voltage (Max Rds On, Min Rds On): 2.5V, 10V
Vgs (Max): ±12V
Drain to Source Voltage (Vdss): 30 V
Gate Charge (Qg) (Max) @ Vgs: 4.38 nC @ 4.5 V
Input Capacitance (Ciss) (Max) @ Vds: 381 pF @ 15 V
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