| Anzahl | Privatkunde |
|---|---|
| 1+ | 8.32 EUR |
| 10+ | 4.27 EUR |
| 100+ | 3.89 EUR |
| 500+ | 3.31 EUR |
| 3000+ | 3.14 EUR |
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Technische Details NTTFD018N08LC onsemi
Description: MOSFET 2N-CH 80V 6A 12WQFN, Packaging: Tape & Reel (TR), Package / Case: 12-PowerWQFN, Mounting Type: Surface Mount, Configuration: 2 N-Channel (Dual), Operating Temperature: -55°C ~ 150°C (TJ), Technology: MOSFET (Metal Oxide), Power - Max: 1.7W (Ta), 26W (Tc), Drain to Source Voltage (Vdss): 80V, Current - Continuous Drain (Id) @ 25°C: 6A (Ta), 26A (Tc), Input Capacitance (Ciss) (Max) @ Vds: 856pF @ 40V, Rds On (Max) @ Id, Vgs: 18mOhm @ 7.8A, 10V, Gate Charge (Qg) (Max) @ Vgs: 12.4nC @ 10V, Vgs(th) (Max) @ Id: 2.5V @ 44µA, Supplier Device Package: 12-WQFN (3.3x3.3).
Weitere Produktangebote NTTFD018N08LC nach Preis ab 3.37 EUR bis 8.46 EUR
| Foto | Bezeichnung | Hersteller | Beschreibung | Verfügbarkeit | Privatkunde | ||||||||||
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NTTFD018N08LC | onsemi |
 Description: MOSFET 2N-CH 80V 6A 12WQFNPackaging: Cut Tape (CT) Package / Case: 12-PowerWQFN Mounting Type: Surface Mount Configuration: 2 N-Channel (Dual) Operating Temperature: -55°C ~ 150°C (TJ) Technology: MOSFET (Metal Oxide) Power - Max: 1.7W (Ta), 26W (Tc) Drain to Source Voltage (Vdss): 80V Current - Continuous Drain (Id) @ 25°C: 6A (Ta), 26A (Tc) Input Capacitance (Ciss) (Max) @ Vds: 856pF @ 40V Rds On (Max) @ Id, Vgs: 18mOhm @ 7.8A, 10V Gate Charge (Qg) (Max) @ Vgs: 12.4nC @ 10V Vgs(th) (Max) @ Id: 2.5V @ 44µA Supplier Device Package: 12-WQFN (3.3x3.3) |
auf Bestellung 2433 Stücke: Lieferzeit 10-14 Tag (e) |
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| NTTFD018N08LC |
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Hersteller: onsemi
Description: MOSFET 2N-CH 80V 6A 12WQFN
Packaging: Cut Tape (CT)
Package / Case: 12-PowerWQFN
Mounting Type: Surface Mount
Configuration: 2 N-Channel (Dual)
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
Power - Max: 1.7W (Ta), 26W (Tc)
Drain to Source Voltage (Vdss): 80V
Current - Continuous Drain (Id) @ 25°C: 6A (Ta), 26A (Tc)
Input Capacitance (Ciss) (Max) @ Vds: 856pF @ 40V
Rds On (Max) @ Id, Vgs: 18mOhm @ 7.8A, 10V
Gate Charge (Qg) (Max) @ Vgs: 12.4nC @ 10V
Vgs(th) (Max) @ Id: 2.5V @ 44µA
Supplier Device Package: 12-WQFN (3.3x3.3)
Description: MOSFET 2N-CH 80V 6A 12WQFN
Packaging: Cut Tape (CT)
Package / Case: 12-PowerWQFN
Mounting Type: Surface Mount
Configuration: 2 N-Channel (Dual)
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
Power - Max: 1.7W (Ta), 26W (Tc)
Drain to Source Voltage (Vdss): 80V
Current - Continuous Drain (Id) @ 25°C: 6A (Ta), 26A (Tc)
Input Capacitance (Ciss) (Max) @ Vds: 856pF @ 40V
Rds On (Max) @ Id, Vgs: 18mOhm @ 7.8A, 10V
Gate Charge (Qg) (Max) @ Vgs: 12.4nC @ 10V
Vgs(th) (Max) @ Id: 2.5V @ 44µA
Supplier Device Package: 12-WQFN (3.3x3.3)
auf Bestellung 2433 Stücke:
Lieferzeit 10-14 Tag (e)
| Anzahl | Privatkunde |
|---|---|
| 3+ | 8.46 EUR |
| 10+ | 5.58 EUR |
| 50+ | 4.34 EUR |
| 100+ | 3.94 EUR |
| 500+ | 3.37 EUR |