Technische Details NTTFS002N04CTAG ON Semiconductor
Category: SMD N channel transistors, Description: Transistor: N-MOSFET; unipolar; 40V; 136A; Idm: 676A; 27W; WDFN8, Type of transistor: N-MOSFET, Polarisation: unipolar, Drain-source voltage: 40V, Drain current: 136A, Pulsed drain current: 676A, Power dissipation: 27W, Case: WDFN8, Gate-source voltage: ±20V, On-state resistance: 2.4mΩ, Mounting: SMD, Gate charge: 34nC, Kind of package: reel; tape, Kind of channel: enhancement, Anzahl je Verpackung: 1500 Stücke.
Weitere Produktangebote NTTFS002N04CTAG
| Foto | Bezeichnung | Hersteller | Beschreibung |
Verfügbarkeit |
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| NTTFS002N04CTAG | Hersteller : ONSEMI |
Category: SMD N channel transistors Description: Transistor: N-MOSFET; unipolar; 40V; 136A; Idm: 676A; 27W; WDFN8 Type of transistor: N-MOSFET Polarisation: unipolar Drain-source voltage: 40V Drain current: 136A Pulsed drain current: 676A Power dissipation: 27W Case: WDFN8 Gate-source voltage: ±20V On-state resistance: 2.4mΩ Mounting: SMD Gate charge: 34nC Kind of package: reel; tape Kind of channel: enhancement Anzahl je Verpackung: 1500 Stücke |
Produkt ist nicht verfügbar |
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NTTFS002N04CTAG | Hersteller : onsemi | MOSFETs T6 40V SG NCH U8FL |
Produkt ist nicht verfügbar |
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| NTTFS002N04CTAG | Hersteller : ONSEMI |
Category: SMD N channel transistors Description: Transistor: N-MOSFET; unipolar; 40V; 136A; Idm: 676A; 27W; WDFN8 Type of transistor: N-MOSFET Polarisation: unipolar Drain-source voltage: 40V Drain current: 136A Pulsed drain current: 676A Power dissipation: 27W Case: WDFN8 Gate-source voltage: ±20V On-state resistance: 2.4mΩ Mounting: SMD Gate charge: 34nC Kind of package: reel; tape Kind of channel: enhancement |
Produkt ist nicht verfügbar |