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NTTFS015P03P8ZTWG

NTTFS015P03P8ZTWG onsemi

nttfs015p03p8z-d.pdf Hersteller: onsemi
Description: MOSFET P-CH 30V 13.4A/47.6A 8DFN
Packaging: Tape & Reel (TR)
Package / Case: 8-PowerWDFN
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: P-Channel
Current - Continuous Drain (Id) @ 25°C: 13.4A (Ta), 47.6A (Tc)
Rds On (Max) @ Id, Vgs: 9.3mOhm @ 12A, 10V
Power Dissipation (Max): 2.66W (Ta), 33.8W (Tc)
Vgs(th) (Max) @ Id: 3V @ 250µA
Supplier Device Package: 8-WDFN (3.3x3.3)
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Vgs (Max): ±25V
Drain to Source Voltage (Vdss): 30 V
Gate Charge (Qg) (Max) @ Vgs: 62.3 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 2706 pF @ 15 V
auf Bestellung 5000 Stücke:
Lieferzeit 10-14 Tag (e)
Anzahl Preis
5000+0.46 EUR
Mindestbestellmenge: 5000
Im Einkaufswagen  Stück im Wert von  UAH
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Technische Details NTTFS015P03P8ZTWG onsemi

Description: MOSFET P-CH 30V 13.4A/47.6A 8DFN, Packaging: Tape & Reel (TR), Package / Case: 8-PowerWDFN, Mounting Type: Surface Mount, Operating Temperature: -55°C ~ 150°C (TJ), Technology: MOSFET (Metal Oxide), FET Type: P-Channel, Current - Continuous Drain (Id) @ 25°C: 13.4A (Ta), 47.6A (Tc), Rds On (Max) @ Id, Vgs: 9.3mOhm @ 12A, 10V, Power Dissipation (Max): 2.66W (Ta), 33.8W (Tc), Vgs(th) (Max) @ Id: 3V @ 250µA, Supplier Device Package: 8-WDFN (3.3x3.3), Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V, Vgs (Max): ±25V, Drain to Source Voltage (Vdss): 30 V, Gate Charge (Qg) (Max) @ Vgs: 62.3 nC @ 10 V, Input Capacitance (Ciss) (Max) @ Vds: 2706 pF @ 15 V.

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NTTFS015P03P8ZTWG NTTFS015P03P8ZTWG Hersteller : onsemi NTTFS015P03P8Z_D-1509454.pdf MOSFETs PFET U8FL 30V 15MO
auf Bestellung 7162 Stücke:
Lieferzeit 10-14 Tag (e)
Anzahl Preis
2+1.85 EUR
10+1.17 EUR
100+0.78 EUR
500+0.61 EUR
1000+0.51 EUR
5000+0.46 EUR
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NTTFS015P03P8ZTWG NTTFS015P03P8ZTWG Hersteller : onsemi nttfs015p03p8z-d.pdf Description: MOSFET P-CH 30V 13.4A/47.6A 8DFN
Packaging: Cut Tape (CT)
Package / Case: 8-PowerWDFN
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: P-Channel
Current - Continuous Drain (Id) @ 25°C: 13.4A (Ta), 47.6A (Tc)
Rds On (Max) @ Id, Vgs: 9.3mOhm @ 12A, 10V
Power Dissipation (Max): 2.66W (Ta), 33.8W (Tc)
Vgs(th) (Max) @ Id: 3V @ 250µA
Supplier Device Package: 8-WDFN (3.3x3.3)
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Vgs (Max): ±25V
Drain to Source Voltage (Vdss): 30 V
Gate Charge (Qg) (Max) @ Vgs: 62.3 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 2706 pF @ 15 V
auf Bestellung 9799 Stücke:
Lieferzeit 10-14 Tag (e)
Anzahl Preis
10+1.92 EUR
15+1.2 EUR
100+0.79 EUR
500+0.61 EUR
1000+0.53 EUR
2000+0.51 EUR
Mindestbestellmenge: 10
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NTTFS015P03P8ZTWG Hersteller : ON Semiconductor nttfs015p03p8z-d.pdf P Channel Power MOSFET
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NTTFS015P03P8ZTWG Hersteller : ONSEMI nttfs015p03p8z-d.pdf NTTFS015P03P8ZTWG SMD P channel transistors
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