Technische Details NTTFS4800NTAG ON Semiconductor
Description: MOSFET N-CH 30V 5A/32A 8WDFN, Packaging: Tape & Reel (TR), Package / Case: 8-PowerWDFN, Mounting Type: Surface Mount, Operating Temperature: -55°C ~ 150°C (TJ), Technology: MOSFET (Metal Oxide), FET Type: N-Channel, Current - Continuous Drain (Id) @ 25°C: 5A (Ta), 32A (Tc), Rds On (Max) @ Id, Vgs: 20mOhm @ 20A, 10V, Power Dissipation (Max): 860mW (Ta), 33.8W (Tc), Vgs(th) (Max) @ Id: 3V @ 250µA, Supplier Device Package: 8-WDFN (3.3x3.3), Drive Voltage (Max Rds On, Min Rds On): 4.5V, 11.5V, Vgs (Max): ±20V, Drain to Source Voltage (Vdss): 30 V, Gate Charge (Qg) (Max) @ Vgs: 16.6 nC @ 10 V, Input Capacitance (Ciss) (Max) @ Vds: 964 pF @ 15 V.
Weitere Produktangebote NTTFS4800NTAG nach Preis ab 0.21 EUR bis 1.37 EUR
| Foto | Bezeichnung | Hersteller | Beschreibung | Verfügbarkeit | Privatkunde | ||
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NTTFS4800NTAG | ON Semiconductor |
 Trans MOSFET N-CH 30V 5A 8-Pin WDFN EP T/R |
auf Bestellung 1500 Stücke: Lieferzeit 14-21 Tag (e) |
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NTTFS4800NTAG | onsemi |
Description: MOSFET N-CH 30V 5A/32A 8WDFN Packaging: Bulk Package / Case: 8-PowerWDFN Mounting Type: Surface Mount Operating Temperature: -55°C ~ 150°C (TJ) Technology: MOSFET (Metal Oxide) FET Type: N-Channel Current - Continuous Drain (Id) @ 25°C: 5A (Ta), 32A (Tc) Rds On (Max) @ Id, Vgs: 20mOhm @ 20A, 10V Power Dissipation (Max): 860mW (Ta), 33.8W (Tc) Vgs(th) (Max) @ Id: 3V @ 250µA Supplier Device Package: 8-WDFN (3.3x3.3) Drive Voltage (Max Rds On, Min Rds On): 4.5V, 11.5V Vgs (Max): ±20V Drain to Source Voltage (Vdss): 30 V Gate Charge (Qg) (Max) @ Vgs: 16.6 nC @ 10 V Input Capacitance (Ciss) (Max) @ Vds: 964 pF @ 15 V |
auf Bestellung 13500 Stücke: Lieferzeit 10-14 Tag (e) |
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| NTTFS4800NTAG |
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Hersteller: ON Semiconductor
Trans MOSFET N-CH 30V 5A 8-Pin WDFN EP T/R
Trans MOSFET N-CH 30V 5A 8-Pin WDFN EP T/R
auf Bestellung 1500 Stücke:
Lieferzeit 14-21 Tag (e)
| Anzahl | Privatkunde |
|---|---|
| 1500+ | 0.21 EUR |
| NTTFS4800NTAG |
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Hersteller: onsemi
Description: MOSFET N-CH 30V 5A/32A 8WDFN
Packaging: Bulk
Package / Case: 8-PowerWDFN
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 5A (Ta), 32A (Tc)
Rds On (Max) @ Id, Vgs: 20mOhm @ 20A, 10V
Power Dissipation (Max): 860mW (Ta), 33.8W (Tc)
Vgs(th) (Max) @ Id: 3V @ 250µA
Supplier Device Package: 8-WDFN (3.3x3.3)
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 11.5V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 30 V
Gate Charge (Qg) (Max) @ Vgs: 16.6 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 964 pF @ 15 V
Description: MOSFET N-CH 30V 5A/32A 8WDFN
Packaging: Bulk
Package / Case: 8-PowerWDFN
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 5A (Ta), 32A (Tc)
Rds On (Max) @ Id, Vgs: 20mOhm @ 20A, 10V
Power Dissipation (Max): 860mW (Ta), 33.8W (Tc)
Vgs(th) (Max) @ Id: 3V @ 250µA
Supplier Device Package: 8-WDFN (3.3x3.3)
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 11.5V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 30 V
Gate Charge (Qg) (Max) @ Vgs: 16.6 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 964 pF @ 15 V
auf Bestellung 13500 Stücke:
Lieferzeit 10-14 Tag (e)
| Anzahl | Privatkunde |
|---|---|
| 395+ | 1.37 EUR |