NTTFS5820NLTAG onsemi

Description: MOSFET N-CH 60V 11A/37A 8WDFN, Rds On (Max) @ Id, Vgs: 11.5mOhm @ 8.7A, 10V, Current - Continuous Drain (Id) @ 25°C: 11A (Ta), 37A (Tc), FET Type: N-Channel, Technology: MOSFET (Metal Oxide), Operating Temperature: -55°C ~ 150°C (TJ), Mounting Type: Surface Mount, Package / Case: 8-PowerWDFN, Packaging: Tape & Reel (TR), Input Capacitance (Ciss) (Max) @ Vds: 1462 pF @ 25 V, Gate Charge (Qg) (Max) @ Vgs: 28 nC @ 10 V, Drain to Source Voltage (Vdss): 60 V, Vgs (Max): ±20V, Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V, Supplier Device Package: 8-WDFN (3.3x3.3), Vgs(th) (Max) @ Id: 2.3V @ 250µA, Power Dissipation (Max): 2.7W (Ta), 33W (Tc).