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NTTFS6H850NTAG onsemi


nttfs6h850n-d.pdf
Hersteller: onsemi
Description: MOSFET N-CH 80V 11A/68A 8WDFN
Input Capacitance (Ciss) (Max) @ Vds: 1140 pF @ 40 V
Gate Charge (Qg) (Max) @ Vgs: 19 nC @ 10 V
Drain to Source Voltage (Vdss): 80 V
Vgs (Max): ±20V
Drive Voltage (Max Rds On, Min Rds On): 6V, 10V
Supplier Device Package: 8-WDFN (3.3x3.3)
Vgs(th) (Max) @ Id: 4V @ 70µA
Power Dissipation (Max): 3.2W (Ta), 107W (Tc)
Rds On (Max) @ Id, Vgs: 9.5mOhm @ 10A, 10V
Current - Continuous Drain (Id) @ 25°C: 11A (Ta), 68A (Tc)
FET Type: N-Channel
Technology: MOSFET (Metal Oxide)
Operating Temperature: -55°C ~ 175°C (TJ)
Mounting Type: Surface Mount
Package / Case: 8-PowerWDFN
Packaging: Tape & Reel (TR)
auf Bestellung 1500 Stücke:

Lieferzeit 10-14 Tag (e)
Anzahl Preis
1500+0.7 EUR
Mindestbestellmenge: 1500 Stücke
Im Einkaufswagen  Stück im Wert von  UAH
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Technische Details NTTFS6H850NTAG onsemi

Description: MOSFET N-CH 80V 11A/68A 8WDFN, Input Capacitance (Ciss) (Max) @ Vds: 1140 pF @ 40 V, Gate Charge (Qg) (Max) @ Vgs: 19 nC @ 10 V, Drain to Source Voltage (Vdss): 80 V, Vgs (Max): ±20V, Drive Voltage (Max Rds On, Min Rds On): 6V, 10V, Supplier Device Package: 8-WDFN (3.3x3.3), Vgs(th) (Max) @ Id: 4V @ 70µA, Power Dissipation (Max): 3.2W (Ta), 107W (Tc), Rds On (Max) @ Id, Vgs: 9.5mOhm @ 10A, 10V, Current - Continuous Drain (Id) @ 25°C: 11A (Ta), 68A (Tc), FET Type: N-Channel, Technology: MOSFET (Metal Oxide), Operating Temperature: -55°C ~ 175°C (TJ), Mounting Type: Surface Mount, Package / Case: 8-PowerWDFN, Packaging: Tape & Reel (TR).

Weitere Produktangebote NTTFS6H850NTAG nach Preis ab 0.66 EUR bis 2.43 EUR

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NTTFS6H850NTAG NTTFS6H850NTAG onsemi nttfs6h850n-d.pdf MOSFETs TRENCH 8 80V NFET
auf Bestellung 6135 Stücke:
Lieferzeit 10-14 Tag (e)
2+1.5 EUR
10+0.96 EUR
100+0.77 EUR
500+0.71 EUR
1500+0.66 EUR
Mindestbestellmenge: 2 Stücke
Im Einkaufswagen  Stück im Wert von  UAH
NTTFS6H850NTAG NTTFS6H850NTAG onsemi nttfs6h850n-d.pdf Description: MOSFET N-CH 80V 11A/68A 8WDFN
Input Capacitance (Ciss) (Max) @ Vds: 1140 pF @ 40 V
Gate Charge (Qg) (Max) @ Vgs: 19 nC @ 10 V
Drain to Source Voltage (Vdss): 80 V
Vgs (Max): ±20V
Drive Voltage (Max Rds On, Min Rds On): 6V, 10V
Supplier Device Package: 8-WDFN (3.3x3.3)
Vgs(th) (Max) @ Id: 4V @ 70µA
Power Dissipation (Max): 3.2W (Ta), 107W (Tc)
Rds On (Max) @ Id, Vgs: 9.5mOhm @ 10A, 10V
Current - Continuous Drain (Id) @ 25°C: 11A (Ta), 68A (Tc)
FET Type: N-Channel
Technology: MOSFET (Metal Oxide)
Operating Temperature: -55°C ~ 175°C (TJ)
Mounting Type: Surface Mount
Package / Case: 8-PowerWDFN
Packaging: Cut Tape (CT)
auf Bestellung 2592 Stücke:
Lieferzeit 10-14 Tag (e)
8+2.43 EUR
12+1.54 EUR
100+1.03 EUR
500+0.81 EUR
Mindestbestellmenge: 8 Stücke
Im Einkaufswagen  Stück im Wert von  UAH
NTTFS6H850NTAG nttfs6h850n-d.pdf
Hersteller: onsemi
MOSFETs TRENCH 8 80V NFET
auf Bestellung 6135 Stücke:
Lieferzeit 10-14 Tag (e)
Anzahl Preis
2+1.5 EUR
10+0.96 EUR
100+0.77 EUR
500+0.71 EUR
1500+0.66 EUR
Mindestbestellmenge: 2 Stücke
Im Einkaufswagen  Stück im Wert von  UAH
NTTFS6H850NTAG nttfs6h850n-d.pdf
Hersteller: onsemi
Description: MOSFET N-CH 80V 11A/68A 8WDFN
Input Capacitance (Ciss) (Max) @ Vds: 1140 pF @ 40 V
Gate Charge (Qg) (Max) @ Vgs: 19 nC @ 10 V
Drain to Source Voltage (Vdss): 80 V
Vgs (Max): ±20V
Drive Voltage (Max Rds On, Min Rds On): 6V, 10V
Supplier Device Package: 8-WDFN (3.3x3.3)
Vgs(th) (Max) @ Id: 4V @ 70µA
Power Dissipation (Max): 3.2W (Ta), 107W (Tc)
Rds On (Max) @ Id, Vgs: 9.5mOhm @ 10A, 10V
Current - Continuous Drain (Id) @ 25°C: 11A (Ta), 68A (Tc)
FET Type: N-Channel
Technology: MOSFET (Metal Oxide)
Operating Temperature: -55°C ~ 175°C (TJ)
Mounting Type: Surface Mount
Package / Case: 8-PowerWDFN
Packaging: Cut Tape (CT)
auf Bestellung 2592 Stücke:
Lieferzeit 10-14 Tag (e)
Anzahl Preis
8+2.43 EUR
12+1.54 EUR
100+1.03 EUR
500+0.81 EUR
Mindestbestellmenge: 8 Stücke
Im Einkaufswagen  Stück im Wert von  UAH