NTTFS6H860NLTAG onsemi
Hersteller: onsemi
Description: MOSFET N-CH 80V 8.1A/30A 8WDFN
Supplier Device Package: 8-WDFN (3.3x3.3)
Vgs(th) (Max) @ Id: 2V @ 30µA
Power Dissipation (Max): 3.1W (Ta), 42W (Tc)
Rds On (Max) @ Id, Vgs: 20mOhm @ 5A, 10V
Current - Continuous Drain (Id) @ 25°C: 8.1A (Ta), 30A (Tc)
FET Type: N-Channel
Technology: MOSFET (Metal Oxide)
Operating Temperature: -55°C ~ 175°C (TJ)
Mounting Type: Surface Mount
Package / Case: 8-PowerWDFN
Packaging: Tape & Reel (TR)
Input Capacitance (Ciss) (Max) @ Vds: 610 pF @ 40 V
Gate Charge (Qg) (Max) @ Vgs: 12 nC @ 10 V
Drain to Source Voltage (Vdss): 80 V
Vgs (Max): ±20V
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
| Anzahl | Privatkunde |
|---|---|
| 1500+ | 0.51 EUR |
| 3000+ | 0.48 EUR |
| 4500+ | 0.45 EUR |
| 7500+ | 0.43 EUR |
| 10500+ | 0.4 EUR |
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Produktbewertung abgeben
Technische Details NTTFS6H860NLTAG onsemi
Description: MOSFET N-CH 80V 8.1A/30A 8WDFN, Supplier Device Package: 8-WDFN (3.3x3.3), Vgs(th) (Max) @ Id: 2V @ 30µA, Power Dissipation (Max): 3.1W (Ta), 42W (Tc), Rds On (Max) @ Id, Vgs: 20mOhm @ 5A, 10V, Current - Continuous Drain (Id) @ 25°C: 8.1A (Ta), 30A (Tc), FET Type: N-Channel, Technology: MOSFET (Metal Oxide), Operating Temperature: -55°C ~ 175°C (TJ), Mounting Type: Surface Mount, Package / Case: 8-PowerWDFN, Packaging: Tape & Reel (TR), Input Capacitance (Ciss) (Max) @ Vds: 610 pF @ 40 V, Gate Charge (Qg) (Max) @ Vgs: 12 nC @ 10 V, Drain to Source Voltage (Vdss): 80 V, Vgs (Max): ±20V, Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V.
Weitere Produktangebote NTTFS6H860NLTAG nach Preis ab 0.44 EUR bis 1.9 EUR
| Foto | Bezeichnung | Hersteller | Beschreibung | Verfügbarkeit | Privatkunde | ||||||||||||
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NTTFS6H860NLTAG | onsemi |
MOSFETs T8 80V LL U8FL |
auf Bestellung 886 Stücke: Lieferzeit 10-14 Tag (e) |
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NTTFS6H860NLTAG | onsemi |
Description: MOSFET N-CH 80V 8.1A/30A 8WDFN Packaging: Cut Tape (CT) Package / Case: 8-PowerWDFN Mounting Type: Surface Mount Operating Temperature: -55°C ~ 175°C (TJ) Technology: MOSFET (Metal Oxide) FET Type: N-Channel Current - Continuous Drain (Id) @ 25°C: 8.1A (Ta), 30A (Tc) Rds On (Max) @ Id, Vgs: 20mOhm @ 5A, 10V Power Dissipation (Max): 3.1W (Ta), 42W (Tc) Vgs(th) (Max) @ Id: 2V @ 30µA Supplier Device Package: 8-WDFN (3.3x3.3) Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V Vgs (Max): ±20V Drain to Source Voltage (Vdss): 80 V Gate Charge (Qg) (Max) @ Vgs: 12 nC @ 10 V Input Capacitance (Ciss) (Max) @ Vds: 610 pF @ 40 V |
auf Bestellung 12629 Stücke: Lieferzeit 10-14 Tag (e) |
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| NTTFS6H860NLTAG | ON Semiconductor |
|
auf Bestellung 1450 Stücke: Lieferzeit 21-28 Tag (e) |
Im Einkaufswagen Stück im Wert von UAH | |||||||||||||
| NTTFS6H860NLTAG | ON Semiconductor |
MOSFET T8 80V LL U8FL |
auf Bestellung 2230 Stücke: Lieferzeit 10-14 Tag (e) |
Im Einkaufswagen Stück im Wert von UAH |
| NTTFS6H860NLTAG |
|
Hersteller: onsemi
MOSFETs T8 80V LL U8FL
MOSFETs T8 80V LL U8FL
auf Bestellung 886 Stücke:
Lieferzeit 10-14 Tag (e)
| Anzahl | Privatkunde |
|---|---|
| 3+ | 1.46 EUR |
| 10+ | 1.04 EUR |
| 100+ | 0.71 EUR |
| 500+ | 0.56 EUR |
| 1500+ | 0.46 EUR |
| 3000+ | 0.44 EUR |
| NTTFS6H860NLTAG |
|
Hersteller: onsemi
Description: MOSFET N-CH 80V 8.1A/30A 8WDFN
Packaging: Cut Tape (CT)
Package / Case: 8-PowerWDFN
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 8.1A (Ta), 30A (Tc)
Rds On (Max) @ Id, Vgs: 20mOhm @ 5A, 10V
Power Dissipation (Max): 3.1W (Ta), 42W (Tc)
Vgs(th) (Max) @ Id: 2V @ 30µA
Supplier Device Package: 8-WDFN (3.3x3.3)
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 80 V
Gate Charge (Qg) (Max) @ Vgs: 12 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 610 pF @ 40 V
Description: MOSFET N-CH 80V 8.1A/30A 8WDFN
Packaging: Cut Tape (CT)
Package / Case: 8-PowerWDFN
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 8.1A (Ta), 30A (Tc)
Rds On (Max) @ Id, Vgs: 20mOhm @ 5A, 10V
Power Dissipation (Max): 3.1W (Ta), 42W (Tc)
Vgs(th) (Max) @ Id: 2V @ 30µA
Supplier Device Package: 8-WDFN (3.3x3.3)
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 80 V
Gate Charge (Qg) (Max) @ Vgs: 12 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 610 pF @ 40 V
auf Bestellung 12629 Stücke:
Lieferzeit 10-14 Tag (e)
| Anzahl | Privatkunde |
|---|---|
| 11+ | 1.9 EUR |
| 18+ | 1.19 EUR |
| 100+ | 0.77 EUR |
| 500+ | 0.6 EUR |
| NTTFS6H860NLTAG |
|
Hersteller: ON Semiconductor
auf Bestellung 1450 Stücke:
Lieferzeit 21-28 Tag (e)
| NTTFS6H860NLTAG |
|
Hersteller: ON Semiconductor
MOSFET T8 80V LL U8FL
MOSFET T8 80V LL U8FL
auf Bestellung 2230 Stücke:
Lieferzeit 10-14 Tag (e)