NTY100N10
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auf Bestellung 4099 Stücke:
Lieferzeit 21-28 Tag (e)
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Technische Details NTY100N10
Description: MOSFET N-CH 100V 123A TO264, Operating Temperature: -55°C ~ 150°C (TJ), Mounting Type: Through Hole, Package / Case: TO-264-3, TO-264AA, Packaging: Tube, Input Capacitance (Ciss) (Max) @ Vds: 10110 pF @ 25 V, Gate Charge (Qg) (Max) @ Vgs: 350 nC @ 10 V, Drain to Source Voltage (Vdss): 100 V, Vgs (Max): ±20V, Drive Voltage (Max Rds On, Min Rds On): 10V, Supplier Device Package: TO-264, Vgs(th) (Max) @ Id: 4V @ 250µA, Power Dissipation (Max): 313W (Tc), Rds On (Max) @ Id, Vgs: 10mOhm @ 50A, 10V, Current - Continuous Drain (Id) @ 25°C: 123A (Tc), FET Type: N-Channel, Technology: MOSFET (Metal Oxide).
Weitere Produktangebote NTY100N10
| Foto | Bezeichnung | Hersteller | Beschreibung |
Verfügbarkeit |
Preis |
|---|---|---|---|---|---|
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NTY100N10 | onsemi |
Description: MOSFET N-CH 100V 123A TO264 Operating Temperature: -55°C ~ 150°C (TJ) Mounting Type: Through Hole Package / Case: TO-264-3, TO-264AA Packaging: Tube Input Capacitance (Ciss) (Max) @ Vds: 10110 pF @ 25 V Gate Charge (Qg) (Max) @ Vgs: 350 nC @ 10 V Drain to Source Voltage (Vdss): 100 V Vgs (Max): ±20V Drive Voltage (Max Rds On, Min Rds On): 10V Supplier Device Package: TO-264 Vgs(th) (Max) @ Id: 4V @ 250µA Power Dissipation (Max): 313W (Tc) Rds On (Max) @ Id, Vgs: 10mOhm @ 50A, 10V Current - Continuous Drain (Id) @ 25°C: 123A (Tc) FET Type: N-Channel Technology: MOSFET (Metal Oxide) |
Produkt ist nicht verfügbar |
Im Einkaufswagen Stück im Wert von UAH |
| NTY100N10 |
|
Hersteller: onsemi
Description: MOSFET N-CH 100V 123A TO264
Operating Temperature: -55°C ~ 150°C (TJ)
Mounting Type: Through Hole
Package / Case: TO-264-3, TO-264AA
Packaging: Tube
Input Capacitance (Ciss) (Max) @ Vds: 10110 pF @ 25 V
Gate Charge (Qg) (Max) @ Vgs: 350 nC @ 10 V
Drain to Source Voltage (Vdss): 100 V
Vgs (Max): ±20V
Drive Voltage (Max Rds On, Min Rds On): 10V
Supplier Device Package: TO-264
Vgs(th) (Max) @ Id: 4V @ 250µA
Power Dissipation (Max): 313W (Tc)
Rds On (Max) @ Id, Vgs: 10mOhm @ 50A, 10V
Current - Continuous Drain (Id) @ 25°C: 123A (Tc)
FET Type: N-Channel
Technology: MOSFET (Metal Oxide)
Description: MOSFET N-CH 100V 123A TO264
Operating Temperature: -55°C ~ 150°C (TJ)
Mounting Type: Through Hole
Package / Case: TO-264-3, TO-264AA
Packaging: Tube
Input Capacitance (Ciss) (Max) @ Vds: 10110 pF @ 25 V
Gate Charge (Qg) (Max) @ Vgs: 350 nC @ 10 V
Drain to Source Voltage (Vdss): 100 V
Vgs (Max): ±20V
Drive Voltage (Max Rds On, Min Rds On): 10V
Supplier Device Package: TO-264
Vgs(th) (Max) @ Id: 4V @ 250µA
Power Dissipation (Max): 313W (Tc)
Rds On (Max) @ Id, Vgs: 10mOhm @ 50A, 10V
Current - Continuous Drain (Id) @ 25°C: 123A (Tc)
FET Type: N-Channel
Technology: MOSFET (Metal Oxide)
Produkt ist nicht verfügbar
Im Einkaufswagen
Stück im Wert von UAH