NTZD3152PT1H onsemi
Hersteller: onsemi
Description: MOSFET 2P-CH 20V 0.43A SOT563
Supplier Device Package: SOT-563
Vgs(th) (Max) @ Id: 1V @ 250µA
Gate Charge (Qg) (Max) @ Vgs: 2.5nC @ 4.5V
Rds On (Max) @ Id, Vgs: 900mOhm @ 430mA, 4.5V
Input Capacitance (Ciss) (Max) @ Vds: 175pF @ 16V
Current - Continuous Drain (Id) @ 25°C: 430mA
Drain to Source Voltage (Vdss): 20V
Power - Max: 250mW
Technology: MOSFET (Metal Oxide)
Operating Temperature: -55°C ~ 150°C (TJ)
Configuration: 2 P-Channel (Dual)
Mounting Type: Surface Mount
Package / Case: SOT-563, SOT-666
Packaging: Bulk
| Anzahl | Preis |
|---|---|
| 3328+ | 0.15 EUR |
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Technische Details NTZD3152PT1H onsemi
Description: MOSFET 2P-CH 20V 0.43A SOT563, Gate Charge (Qg) (Max) @ Vgs: 2.5nC @ 4.5V, Rds On (Max) @ Id, Vgs: 900mOhm @ 430mA, 4.5V, Input Capacitance (Ciss) (Max) @ Vds: 175pF @ 16V, Current - Continuous Drain (Id) @ 25°C: 430mA, Drain to Source Voltage (Vdss): 20V, Technology: MOSFET (Metal Oxide), Operating Temperature: -55°C ~ 150°C (TJ), Configuration: 2 P-Channel (Dual), Mounting Type: Surface Mount, Package / Case: SOT-563, SOT-666, Packaging: Tape & Reel (TR), Supplier Device Package: SOT-563, Vgs(th) (Max) @ Id: 1V @ 250µA, Power - Max: 250mW.
Weitere Produktangebote NTZD3152PT1H
| Foto | Bezeichnung | Hersteller | Beschreibung |
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NTZD3152PT1H | onsemi |
Description: MOSFET 2P-CH 20V 0.43A SOT563 Gate Charge (Qg) (Max) @ Vgs: 2.5nC @ 4.5V Rds On (Max) @ Id, Vgs: 900mOhm @ 430mA, 4.5V Input Capacitance (Ciss) (Max) @ Vds: 175pF @ 16V Current - Continuous Drain (Id) @ 25°C: 430mA Drain to Source Voltage (Vdss): 20V Technology: MOSFET (Metal Oxide) Operating Temperature: -55°C ~ 150°C (TJ) Configuration: 2 P-Channel (Dual) Mounting Type: Surface Mount Package / Case: SOT-563, SOT-666 Packaging: Tape & Reel (TR) Supplier Device Package: SOT-563 Vgs(th) (Max) @ Id: 1V @ 250µA Power - Max: 250mW |
Produkt ist nicht verfügbar |
Im Einkaufswagen Stück im Wert von UAH |
 |
NTZD3152PT1H | ON Semiconductor |
MOSFET PFET SOT563 20V 430MA TR |
Produkt ist nicht verfügbar |
Im Einkaufswagen Stück im Wert von UAH |
| NTZD3152PT1H |
|
Hersteller: onsemi
Description: MOSFET 2P-CH 20V 0.43A SOT563
Gate Charge (Qg) (Max) @ Vgs: 2.5nC @ 4.5V
Rds On (Max) @ Id, Vgs: 900mOhm @ 430mA, 4.5V
Input Capacitance (Ciss) (Max) @ Vds: 175pF @ 16V
Current - Continuous Drain (Id) @ 25°C: 430mA
Drain to Source Voltage (Vdss): 20V
Technology: MOSFET (Metal Oxide)
Operating Temperature: -55°C ~ 150°C (TJ)
Configuration: 2 P-Channel (Dual)
Mounting Type: Surface Mount
Package / Case: SOT-563, SOT-666
Packaging: Tape & Reel (TR)
Supplier Device Package: SOT-563
Vgs(th) (Max) @ Id: 1V @ 250µA
Power - Max: 250mW
Description: MOSFET 2P-CH 20V 0.43A SOT563
Gate Charge (Qg) (Max) @ Vgs: 2.5nC @ 4.5V
Rds On (Max) @ Id, Vgs: 900mOhm @ 430mA, 4.5V
Input Capacitance (Ciss) (Max) @ Vds: 175pF @ 16V
Current - Continuous Drain (Id) @ 25°C: 430mA
Drain to Source Voltage (Vdss): 20V
Technology: MOSFET (Metal Oxide)
Operating Temperature: -55°C ~ 150°C (TJ)
Configuration: 2 P-Channel (Dual)
Mounting Type: Surface Mount
Package / Case: SOT-563, SOT-666
Packaging: Tape & Reel (TR)
Supplier Device Package: SOT-563
Vgs(th) (Max) @ Id: 1V @ 250µA
Power - Max: 250mW
Produkt ist nicht verfügbar
Im Einkaufswagen
Stück im Wert von UAH
| NTZD3152PT1H |
|
Hersteller: ON Semiconductor
MOSFET PFET SOT563 20V 430MA TR
MOSFET PFET SOT563 20V 430MA TR
Produkt ist nicht verfügbar
Im Einkaufswagen
Stück im Wert von UAH