NTZS3151PT1G onsemi

Description: MOSFET P-CH 20V 860MA SOT563, Input Capacitance (Ciss) (Max) @ Vds: 458 pF @ 16 V, Gate Charge (Qg) (Max) @ Vgs: 5.6 nC @ 4.5 V, Drain to Source Voltage (Vdss): 20 V, Vgs (Max): ±8V, Drive Voltage (Max Rds On, Min Rds On): 1.8V, 4.5V, Part Status: Active, Supplier Device Package: SOT-563, Vgs(th) (Max) @ Id: 1V @ 250µA, Power Dissipation (Max): 170mW (Ta), Rds On (Max) @ Id, Vgs: 150mOhm @ 950mA, 4.5V, Current - Continuous Drain (Id) @ 25°C: 860mA (Ta), FET Type: P-Channel, Technology: MOSFET (Metal Oxide), Operating Temperature: -55°C ~ 150°C (TJ), Mounting Type: Surface Mount, Package / Case: SOT-563, SOT-666, Packaging: Tape & Reel (TR).