NVA4001NT1G onsemi
Hersteller: onsemi
Description: MOSFET N-CH 20V SC75
Packaging: Tape & Reel (TR)
Package / Case: SC-75, SOT-416
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 238mA (Tj)
Rds On (Max) @ Id, Vgs: 3Ohm @ 10mA, 4.5V
Power Dissipation (Max): 300mW (Tj)
Vgs(th) (Max) @ Id: 1.5V @ 100µA
Supplier Device Package: SC-75, SOT-416
Grade: Automotive
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 2.5V, 4.5V
Vgs (Max): ±10V
Drain to Source Voltage (Vdss): 20 V
Input Capacitance (Ciss) (Max) @ Vds: 20 pF @ 5 V
Qualification: AEC-Q101
| Anzahl | Privatkunde |
|---|---|
| 3000+ | 0.18 EUR |
| 6000+ | 0.17 EUR |
| 9000+ | 0.15 EUR |
| 15000+ | 0.14 EUR |
Artikel auf Bestellung
Nicht an unserem Lager — wir beziehen ihn nach Ihrer Bestellung vom Lieferantenlager.
Lieferzeit:
10-14 Tag (e)
Mindestmenge:
3000 Stücke
Produktrezensionen
Produktbewertung abgeben
Technische Details NVA4001NT1G onsemi
Description: MOSFET N-CH 20V SC75, Packaging: Tape & Reel (TR), Package / Case: SC-75, SOT-416, Mounting Type: Surface Mount, Operating Temperature: -55°C ~ 150°C (TJ), Technology: MOSFET (Metal Oxide), FET Type: N-Channel, Current - Continuous Drain (Id) @ 25°C: 238mA (Tj), Rds On (Max) @ Id, Vgs: 3Ohm @ 10mA, 4.5V, Power Dissipation (Max): 300mW (Tj), Vgs(th) (Max) @ Id: 1.5V @ 100µA, Supplier Device Package: SC-75, SOT-416, Grade: Automotive, Part Status: Active, Drive Voltage (Max Rds On, Min Rds On): 2.5V, 4.5V, Vgs (Max): ±10V, Drain to Source Voltage (Vdss): 20 V, Input Capacitance (Ciss) (Max) @ Vds: 20 pF @ 5 V, Qualification: AEC-Q101.
Weitere Produktangebote NVA4001NT1G nach Preis ab 0.14 EUR bis 1.08 EUR
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NVA4001NT1G | onsemi |
Description: MOSFET N-CH 20V SC75 Packaging: Cut Tape (CT) Package / Case: SC-75, SOT-416 Mounting Type: Surface Mount Operating Temperature: -55°C ~ 150°C (TJ) Technology: MOSFET (Metal Oxide) FET Type: N-Channel Current - Continuous Drain (Id) @ 25°C: 238mA (Tj) Rds On (Max) @ Id, Vgs: 3Ohm @ 10mA, 4.5V Power Dissipation (Max): 300mW (Tj) Vgs(th) (Max) @ Id: 1.5V @ 100µA Supplier Device Package: SC-75, SOT-416 Grade: Automotive Part Status: Active Drive Voltage (Max Rds On, Min Rds On): 2.5V, 4.5V Vgs (Max): ±10V Drain to Source Voltage (Vdss): 20 V Input Capacitance (Ciss) (Max) @ Vds: 20 pF @ 5 V Qualification: AEC-Q101 |
auf Bestellung 34763 Stücke: Lieferzeit 10-14 Tag (e) |
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NVA4001NT1G | onsemi |
MOSFETs NFET SC75 20V 238MA 1.5OH |
auf Bestellung 24063 Stücke: Lieferzeit 10-14 Tag (e) |
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| NVA4001NT1G | ONSEMI |
Category: SMD N channel transistors Description: Transistor: N-MOSFET; unipolar; 20V; 238mA; Idm: 0.714A; 300mW; SC75 Pulsed drain current: 0.714A Power dissipation: 0.3W Polarisation: unipolar Version: ESD Drain current: 0.238A Kind of channel: enhancement Drain-source voltage: 20V Type of transistor: N-MOSFET Gate-source voltage: ±10V Kind of package: reel; tape Case: SC75 On-state resistance: 3Ω Mounting: SMD |
auf Bestellung 2869 Stücke: Lieferzeit 14-21 Tag (e) |
Im Einkaufswagen Stück im Wert von UAH |
| NVA4001NT1G |
|
Hersteller: onsemi
Description: MOSFET N-CH 20V SC75
Packaging: Cut Tape (CT)
Package / Case: SC-75, SOT-416
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 238mA (Tj)
Rds On (Max) @ Id, Vgs: 3Ohm @ 10mA, 4.5V
Power Dissipation (Max): 300mW (Tj)
Vgs(th) (Max) @ Id: 1.5V @ 100µA
Supplier Device Package: SC-75, SOT-416
Grade: Automotive
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 2.5V, 4.5V
Vgs (Max): ±10V
Drain to Source Voltage (Vdss): 20 V
Input Capacitance (Ciss) (Max) @ Vds: 20 pF @ 5 V
Qualification: AEC-Q101
Description: MOSFET N-CH 20V SC75
Packaging: Cut Tape (CT)
Package / Case: SC-75, SOT-416
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 238mA (Tj)
Rds On (Max) @ Id, Vgs: 3Ohm @ 10mA, 4.5V
Power Dissipation (Max): 300mW (Tj)
Vgs(th) (Max) @ Id: 1.5V @ 100µA
Supplier Device Package: SC-75, SOT-416
Grade: Automotive
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 2.5V, 4.5V
Vgs (Max): ±10V
Drain to Source Voltage (Vdss): 20 V
Input Capacitance (Ciss) (Max) @ Vds: 20 pF @ 5 V
Qualification: AEC-Q101
auf Bestellung 34763 Stücke:
Lieferzeit 10-14 Tag (e)
| Anzahl | Privatkunde |
|---|---|
| 25+ | 0.83 EUR |
| 41+ | 0.51 EUR |
| 100+ | 0.32 EUR |
| 500+ | 0.25 EUR |
| 1000+ | 0.21 EUR |
| NVA4001NT1G |
|
Hersteller: onsemi
MOSFETs NFET SC75 20V 238MA 1.5OH
MOSFETs NFET SC75 20V 238MA 1.5OH
auf Bestellung 24063 Stücke:
Lieferzeit 10-14 Tag (e)
| Anzahl | Privatkunde |
|---|---|
| 3+ | 1.08 EUR |
| 10+ | 0.48 EUR |
| 100+ | 0.42 EUR |
| 500+ | 0.2 EUR |
| 1000+ | 0.15 EUR |
| 3000+ | 0.14 EUR |
| NVA4001NT1G |
|
Hersteller: ONSEMI
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 20V; 238mA; Idm: 0.714A; 300mW; SC75
Pulsed drain current: 0.714A
Power dissipation: 0.3W
Polarisation: unipolar
Version: ESD
Drain current: 0.238A
Kind of channel: enhancement
Drain-source voltage: 20V
Type of transistor: N-MOSFET
Gate-source voltage: ±10V
Kind of package: reel; tape
Case: SC75
On-state resistance: 3Ω
Mounting: SMD
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 20V; 238mA; Idm: 0.714A; 300mW; SC75
Pulsed drain current: 0.714A
Power dissipation: 0.3W
Polarisation: unipolar
Version: ESD
Drain current: 0.238A
Kind of channel: enhancement
Drain-source voltage: 20V
Type of transistor: N-MOSFET
Gate-source voltage: ±10V
Kind of package: reel; tape
Case: SC75
On-state resistance: 3Ω
Mounting: SMD
auf Bestellung 2869 Stücke:
Lieferzeit 14-21 Tag (e)