NVBLS0D5N04M8TXG onsemi
Hersteller: onsemi
Description: MOSFET N-CH 40V 300A 8HPSOF
Qualification: AEC-Q101
Input Capacitance (Ciss) (Max) @ Vds: 15900 pF @ 25 V
Gate Charge (Qg) (Max) @ Vgs: 296 nC @ 10 V
Drain to Source Voltage (Vdss): 40 V
Vgs (Max): ±20V
Drive Voltage (Max Rds On, Min Rds On): 10V
Grade: Automotive
Supplier Device Package: 8-HPSOF
Vgs(th) (Max) @ Id: 4V @ 250µA
Power Dissipation (Max): 429W (Tj)
Rds On (Max) @ Id, Vgs: 0.57mOhm @ 80A, 10V
Current - Continuous Drain (Id) @ 25°C: 300A (Tc)
FET Type: N-Channel
Technology: MOSFET (Metal Oxide)
Operating Temperature: -55°C ~ 175°C (TJ)
Mounting Type: Surface Mount
Package / Case: 8-PowerSFN
Packaging: Bulk
| Anzahl | Preis |
|---|---|
| 105+ | 4.64 EUR |
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Technische Details NVBLS0D5N04M8TXG onsemi
Description: MOSFET N-CH 40V 300A 8HPSOF, Packaging: Tape & Reel (TR), Package / Case: 8-PowerSFN, Mounting Type: Surface Mount, Operating Temperature: -55°C ~ 175°C (TJ), Technology: MOSFET (Metal Oxide), FET Type: N-Channel, Current - Continuous Drain (Id) @ 25°C: 300A (Tc), Rds On (Max) @ Id, Vgs: 0.57mOhm @ 80A, 10V, Power Dissipation (Max): 429W (Tj), Vgs(th) (Max) @ Id: 4V @ 250µA, Supplier Device Package: 8-HPSOF, Grade: Automotive, Drive Voltage (Max Rds On, Min Rds On): 10V, Vgs (Max): ±20V, Drain to Source Voltage (Vdss): 40 V, Gate Charge (Qg) (Max) @ Vgs: 296 nC @ 10 V, Input Capacitance (Ciss) (Max) @ Vds: 15900 pF @ 25 V, Qualification: AEC-Q101.
Weitere Produktangebote NVBLS0D5N04M8TXG
| Foto | Bezeichnung | Hersteller | Beschreibung |
Verfügbarkeit |
Preis |
|---|---|---|---|---|---|
 |
NVBLS0D5N04M8TXG | ON Semiconductor |
MOSFET NMOS TOLL 40V 0.65 |
auf Bestellung 419 Stücke: Lieferzeit 10-14 Tag (e) |
Im Einkaufswagen Stück im Wert von UAH |
| NVBLS0D5N04M8TXG |
|
Hersteller: ON Semiconductor
MOSFET NMOS TOLL 40V 0.65
MOSFET NMOS TOLL 40V 0.65
auf Bestellung 419 Stücke:
Lieferzeit 10-14 Tag (e)Im Einkaufswagen Stück im Wert von UAH