Technische Details NVD3055L170T4G ON Semiconductor
Description: MOSFET N-CH 60V 9A DPAK, Packaging: Tape & Reel (TR), Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63, Mounting Type: Surface Mount, Operating Temperature: -55°C ~ 175°C (TJ), Technology: MOSFET (Metal Oxide), FET Type: N-Channel, Current - Continuous Drain (Id) @ 25°C: 9A (Ta), Rds On (Max) @ Id, Vgs: 170mOhm @ 4.5A, 5V, Power Dissipation (Max): 1.5W (Ta), 28.5W (Tj), Vgs(th) (Max) @ Id: 2V @ 250µA, Supplier Device Package: DPAK, Part Status: Obsolete, Drive Voltage (Max Rds On, Min Rds On): 5V, Vgs (Max): ±15V, Drain to Source Voltage (Vdss): 60 V, Gate Charge (Qg) (Max) @ Vgs: 10 nC @ 5 V, Input Capacitance (Ciss) (Max) @ Vds: 275 pF @ 25 V, Grade: Automotive, Qualification: AEC-Q101.
Weitere Produktangebote NVD3055L170T4G
| Foto | Bezeichnung | Hersteller | Beschreibung |
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| NVD3055L170T4G | Hersteller : ON Semiconductor |
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auf Bestellung 2445 Stücke: Lieferzeit 21-28 Tag (e) |
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NVD3055L170T4G | Hersteller : ON Semiconductor |
Trans MOSFET N-CH 60V 9A Automotive 3-Pin(2+Tab) DPAK T/R |
Produkt ist nicht verfügbar |
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NVD3055L170T4G | Hersteller : onsemi |
Description: MOSFET N-CH 60V 9A DPAK Packaging: Tape & Reel (TR) Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63 Mounting Type: Surface Mount Operating Temperature: -55°C ~ 175°C (TJ) Technology: MOSFET (Metal Oxide) FET Type: N-Channel Current - Continuous Drain (Id) @ 25°C: 9A (Ta) Rds On (Max) @ Id, Vgs: 170mOhm @ 4.5A, 5V Power Dissipation (Max): 1.5W (Ta), 28.5W (Tj) Vgs(th) (Max) @ Id: 2V @ 250µA Supplier Device Package: DPAK Part Status: Obsolete Drive Voltage (Max Rds On, Min Rds On): 5V Vgs (Max): ±15V Drain to Source Voltage (Vdss): 60 V Gate Charge (Qg) (Max) @ Vgs: 10 nC @ 5 V Input Capacitance (Ciss) (Max) @ Vds: 275 pF @ 25 V Grade: Automotive Qualification: AEC-Q101 |
Produkt ist nicht verfügbar |