NVD5484NLT4G onsemi

Description: MOSFET N-CH 60V 10.7A/54A DPAK-3, Qualification: AEC-Q101, Input Capacitance (Ciss) (Max) @ Vds: 1410 pF @ 25 V, Gate Charge (Qg) (Max) @ Vgs: 48 nC @ 10 V, Drain to Source Voltage (Vdss): 60 V, Vgs (Max): ±20V, Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V, Grade: Automotive, Supplier Device Package: DPAK-3, Vgs(th) (Max) @ Id: 2.5V @ 250µA, Power Dissipation (Max): 3.9W (Ta), 100W (Tc), Rds On (Max) @ Id, Vgs: 17mOhm @ 25A, 10V, Current - Continuous Drain (Id) @ 25°C: 10.7A (Ta), 54A (Tc), FET Type: N-Channel, Technology: MOSFET (Metal Oxide), Operating Temperature: -55°C ~ 175°C (TJ), Mounting Type: Surface Mount, Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63, Packaging: Tape & Reel (TR).