NVD5802NT4G-VF01 onsemi

Description: MOSFET N-CH 40V 16.4A/101A DPAK, Qualification: AEC-Q101, Grade: Automotive, Gate Charge (Qg) (Max) @ Vgs: 100 nC @ 10 V, Drain to Source Voltage (Vdss): 40 V, Vgs (Max): ±20V, Drive Voltage (Max Rds On, Min Rds On): 5V, 10V, Supplier Device Package: DPAK, Vgs(th) (Max) @ Id: 3.5V @ 250µA, Power Dissipation (Max): 2.5W (Ta), 93.75W (Tc), Rds On (Max) @ Id, Vgs: 4.4mOhm @ 50A, 10V, Current - Continuous Drain (Id) @ 25°C: 16.4A (Ta), 101A (Tc), FET Type: N-Channel, Technology: MOSFET (Metal Oxide), Operating Temperature: -55°C ~ 175°C (TJ), Mounting Type: Surface Mount, Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63, Packaging: Tape & Reel (TR), Input Capacitance (Ciss) (Max) @ Vds: 5300 pF @ 12 V.