Technische Details NVD5863NLT4G-VF01 ON Semiconductor
Description: MOSFET N-CH 60V 14.9A/82A DPAK, Packaging: Tape & Reel (TR), Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63, Mounting Type: Surface Mount, Operating Temperature: -55°C ~ 175°C (TJ), Technology: MOSFET (Metal Oxide), FET Type: N-Channel, Current - Continuous Drain (Id) @ 25°C: 14.9A (Ta), 82A (Tc), Rds On (Max) @ Id, Vgs: 7.1mOhm @ 41A, 10V, Power Dissipation (Max): 3.1W (Ta), 96W (Tc), Vgs(th) (Max) @ Id: 3V @ 250µA, Supplier Device Package: DPAK-3, Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V, Vgs (Max): ±20V, Drain to Source Voltage (Vdss): 60 V, Gate Charge (Qg) (Max) @ Vgs: 70 nC @ 10 V, Input Capacitance (Ciss) (Max) @ Vds: 3850 pF @ 25 V.
Weitere Produktangebote NVD5863NLT4G-VF01
| Foto | Bezeichnung | Hersteller | Beschreibung |
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| NVD5863NLT4G-VF01 | Hersteller : ON Semiconductor |
 Trans MOSFET N-CH 60V 14.9A Automotive 3-Pin(2+Tab) DPAK T/R |
Produkt ist nicht verfügbar |
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NVD5863NLT4G-VF01 | Hersteller : onsemi |
Description: MOSFET N-CH 60V 14.9A/82A DPAK Packaging: Tape & Reel (TR) Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63 Mounting Type: Surface Mount Operating Temperature: -55°C ~ 175°C (TJ) Technology: MOSFET (Metal Oxide) FET Type: N-Channel Current - Continuous Drain (Id) @ 25°C: 14.9A (Ta), 82A (Tc) Rds On (Max) @ Id, Vgs: 7.1mOhm @ 41A, 10V Power Dissipation (Max): 3.1W (Ta), 96W (Tc) Vgs(th) (Max) @ Id: 3V @ 250µA Supplier Device Package: DPAK-3 Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V Vgs (Max): ±20V Drain to Source Voltage (Vdss): 60 V Gate Charge (Qg) (Max) @ Vgs: 70 nC @ 10 V Input Capacitance (Ciss) (Max) @ Vds: 3850 pF @ 25 V |
Produkt ist nicht verfügbar |