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NVD5C454NT4G

NVD5C454NT4G onsemi

nvd5c454n-d.pdf Hersteller: onsemi
Description: MOSFET N-CH 40V 19A/82A DPAK
Packaging: Cut Tape (CT)
Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 19A (Ta), 82A (Tc)
Rds On (Max) @ Id, Vgs: 4.2mOhm @ 40A, 10V
Power Dissipation (Max): 3.1W (Ta), 56W (Tc)
Vgs(th) (Max) @ Id: 4V @ 70µA
Supplier Device Package: DPAK
Grade: Automotive
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 40 V
Gate Charge (Qg) (Max) @ Vgs: 32 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 1900 pF @ 25 V
Qualification: AEC-Q101
auf Bestellung 2368 Stücke:
Lieferzeit 10-14 Tag (e)
Anzahl Preis
5+4.21 EUR
10+2.57 EUR
100+1.85 EUR
500+1.57 EUR
1000+1.46 EUR
Mindestbestellmenge: 5
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Technische Details NVD5C454NT4G onsemi

Description: MOSFET N-CH 40V 19A/82A DPAK, Packaging: Tape & Reel (TR), Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63, Mounting Type: Surface Mount, Operating Temperature: -55°C ~ 175°C (TJ), Technology: MOSFET (Metal Oxide), FET Type: N-Channel, Current - Continuous Drain (Id) @ 25°C: 19A (Ta), 82A (Tc), Rds On (Max) @ Id, Vgs: 4.2mOhm @ 40A, 10V, Power Dissipation (Max): 3.1W (Ta), 56W (Tc), Vgs(th) (Max) @ Id: 4V @ 70µA, Supplier Device Package: DPAK, Grade: Automotive, Drive Voltage (Max Rds On, Min Rds On): 10V, Vgs (Max): ±20V, Drain to Source Voltage (Vdss): 40 V, Gate Charge (Qg) (Max) @ Vgs: 32 nC @ 10 V, Input Capacitance (Ciss) (Max) @ Vds: 1900 pF @ 25 V, Qualification: AEC-Q101.

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NVD5C454NT4G NVD5C454NT4G Hersteller : onsemi nvd5c454n-d.pdf MOSFETs T6 40V DPAK EXP
auf Bestellung 1992 Stücke:
Lieferzeit 10-14 Tag (e)
Anzahl Preis
1+4.33 EUR
10+2.82 EUR
100+1.94 EUR
500+1.61 EUR
2500+1.35 EUR
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NVD5C454NT4G Hersteller : ON Semiconductor nvd5c454n-d.pdf
auf Bestellung 840 Stücke:
Lieferzeit 21-28 Tag (e)
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NVD5C454NT4G NVD5C454NT4G Hersteller : onsemi nvd5c454n-d.pdf Description: MOSFET N-CH 40V 19A/82A DPAK
Packaging: Tape & Reel (TR)
Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 19A (Ta), 82A (Tc)
Rds On (Max) @ Id, Vgs: 4.2mOhm @ 40A, 10V
Power Dissipation (Max): 3.1W (Ta), 56W (Tc)
Vgs(th) (Max) @ Id: 4V @ 70µA
Supplier Device Package: DPAK
Grade: Automotive
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 40 V
Gate Charge (Qg) (Max) @ Vgs: 32 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 1900 pF @ 25 V
Qualification: AEC-Q101
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