auf Bestellung 4921 Stücke:
Lieferzeit 14-28 Tag (e)
Anzahl | Preis ohne MwSt |
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33+ | 1.62 EUR |
37+ | 1.43 EUR |
100+ | 1.03 EUR |
500+ | 0.84 EUR |
1000+ | 0.7 EUR |
3000+ | 0.64 EUR |
6000+ | 0.58 EUR |
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Technische Details NVGS4111PT1G onsemi
Description: MOSFET P-CH 30V 3.7A 6TSOP, Packaging: Tape & Reel (TR), Package / Case: SOT-23-6 Thin, TSOT-23-6, Mounting Type: Surface Mount, Operating Temperature: -55°C ~ 150°C (TJ), Technology: MOSFET (Metal Oxide), FET Type: P-Channel, Current - Continuous Drain (Id) @ 25°C: 3.7A (Ta), Rds On (Max) @ Id, Vgs: 60mOhm @ 3.7A, 10V, Power Dissipation (Max): 630mW (Ta), Vgs(th) (Max) @ Id: 3V @ 250µA, Supplier Device Package: 6-TSOP, Grade: Automotive, Part Status: Active, Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V, Vgs (Max): ±20V, Drain to Source Voltage (Vdss): 30 V, Gate Charge (Qg) (Max) @ Vgs: 32 nC @ 10 V, Input Capacitance (Ciss) (Max) @ Vds: 750 pF @ 15 V, Qualification: AEC-Q101.
Weitere Produktangebote NVGS4111PT1G nach Preis ab 0.71 EUR bis 1.64 EUR
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NVGS4111PT1G | Hersteller : onsemi |
Description: MOSFET P-CH 30V 3.7A 6TSOP Packaging: Cut Tape (CT) Package / Case: SOT-23-6 Thin, TSOT-23-6 Mounting Type: Surface Mount Operating Temperature: -55°C ~ 150°C (TJ) Technology: MOSFET (Metal Oxide) FET Type: P-Channel Current - Continuous Drain (Id) @ 25°C: 3.7A (Ta) Rds On (Max) @ Id, Vgs: 60mOhm @ 3.7A, 10V Power Dissipation (Max): 630mW (Ta) Vgs(th) (Max) @ Id: 3V @ 250µA Supplier Device Package: 6-TSOP Grade: Automotive Part Status: Active Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V Vgs (Max): ±20V Drain to Source Voltage (Vdss): 30 V Gate Charge (Qg) (Max) @ Vgs: 32 nC @ 10 V Input Capacitance (Ciss) (Max) @ Vds: 750 pF @ 15 V Qualification: AEC-Q101 |
auf Bestellung 1898 Stücke: Lieferzeit 21-28 Tag (e) |
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NVGS4111PT1G | Hersteller : ON Semiconductor |
auf Bestellung 2580 Stücke: Lieferzeit 21-28 Tag (e) |
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NVGS4111PT1G | Hersteller : onsemi |
Description: MOSFET P-CH 30V 3.7A 6TSOP Packaging: Tape & Reel (TR) Package / Case: SOT-23-6 Thin, TSOT-23-6 Mounting Type: Surface Mount Operating Temperature: -55°C ~ 150°C (TJ) Technology: MOSFET (Metal Oxide) FET Type: P-Channel Current - Continuous Drain (Id) @ 25°C: 3.7A (Ta) Rds On (Max) @ Id, Vgs: 60mOhm @ 3.7A, 10V Power Dissipation (Max): 630mW (Ta) Vgs(th) (Max) @ Id: 3V @ 250µA Supplier Device Package: 6-TSOP Grade: Automotive Part Status: Active Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V Vgs (Max): ±20V Drain to Source Voltage (Vdss): 30 V Gate Charge (Qg) (Max) @ Vgs: 32 nC @ 10 V Input Capacitance (Ciss) (Max) @ Vds: 750 pF @ 15 V Qualification: AEC-Q101 |
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