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NVGS5120PT1G

NVGS5120PT1G onsemi

ntgs5120p-d.pdf
Hersteller: onsemi
Description: MOSFET P-CH 60V 1.8A 6TSOP
Packaging: Tape & Reel (TR)
Package / Case: SOT-23-6 Thin, TSOT-23-6
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: P-Channel
Current - Continuous Drain (Id) @ 25°C: 1.8A (Ta)
Rds On (Max) @ Id, Vgs: 111mOhm @ 2.9A, 10V
Power Dissipation (Max): 600mW (Ta)
Vgs(th) (Max) @ Id: 3V @ 250µA
Supplier Device Package: 6-TSOP
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 60 V
Gate Charge (Qg) (Max) @ Vgs: 18.1 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 942 pF @ 30 V
Grade: Automotive
Qualification: AEC-Q101
auf Bestellung 23000 Stücke:
Lieferzeit 10-14 Tag (e)
AnzahlPrivatkunde
3000+0.67 EUR
6000+0.62 EUR
Mindestbestellmenge: 3000 Stücke
Im Einkaufswagen  Stück im Wert von  UAH
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Technische Details NVGS5120PT1G onsemi

Description: MOSFET P-CH 60V 1.8A 6TSOP, Packaging: Tape & Reel (TR), Package / Case: SOT-23-6 Thin, TSOT-23-6, Mounting Type: Surface Mount, Operating Temperature: -55°C ~ 150°C (TJ), Technology: MOSFET (Metal Oxide), FET Type: P-Channel, Current - Continuous Drain (Id) @ 25°C: 1.8A (Ta), Rds On (Max) @ Id, Vgs: 111mOhm @ 2.9A, 10V, Power Dissipation (Max): 600mW (Ta), Vgs(th) (Max) @ Id: 3V @ 250µA, Supplier Device Package: 6-TSOP, Part Status: Active, Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V, Vgs (Max): ±20V, Drain to Source Voltage (Vdss): 60 V, Gate Charge (Qg) (Max) @ Vgs: 18.1 nC @ 10 V, Input Capacitance (Ciss) (Max) @ Vds: 942 pF @ 30 V, Grade: Automotive, Qualification: AEC-Q101.

Weitere Produktangebote NVGS5120PT1G nach Preis ab 0.61 EUR bis 2.73 EUR

Foto Bezeichnung Hersteller Beschreibung Verfügbarkeit Privatkunde
NVGS5120PT1G NVGS5120PT1G ONSEMI ntgs5120p-d.pdf Category: SMD P channel transistors
Description: Transistor: P-MOSFET; unipolar; -60V; -2.9A; Idm: -20A; 1.1W; TSOP6
Case: TSOP6
Mounting: SMD
Kind of package: reel; tape
Drain-source voltage: -60V
Pulsed drain current: -20A
Drain current: -2.9A
Gate charge: 18.1nC
On-state resistance: 111mΩ
Power dissipation: 1.1W
Gate-source voltage: ±20V
Polarisation: unipolar
Kind of channel: enhancement
Type of transistor: P-MOSFET
auf Bestellung 2895 Stücke:
Lieferzeit 14-21 Tag (e)
57+1.51 EUR
70+1.21 EUR
79+1.08 EUR
103+0.83 EUR
115+0.75 EUR
500+0.63 EUR
Mindestbestellmenge: 57 Stücke
Im Einkaufswagen  Stück im Wert von  UAH
NVGS5120PT1G NVGS5120PT1G onsemi ntgs5120p-d.pdf MOSFETs PFET TSOP6 60V 2.5A 111MO
auf Bestellung 184829 Stücke:
Lieferzeit 10-14 Tag (e)
2+2.51 EUR
10+1.56 EUR
100+1.04 EUR
500+0.82 EUR
1000+0.74 EUR
3000+0.65 EUR
6000+0.61 EUR
Mindestbestellmenge: 2 Stücke
Im Einkaufswagen  Stück im Wert von  UAH
NVGS5120PT1G NVGS5120PT1G onsemi ntgs5120p-d.pdf Description: MOSFET P-CH 60V 1.8A 6TSOP
Packaging: Cut Tape (CT)
Package / Case: SOT-23-6 Thin, TSOT-23-6
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: P-Channel
Current - Continuous Drain (Id) @ 25°C: 1.8A (Ta)
Rds On (Max) @ Id, Vgs: 111mOhm @ 2.9A, 10V
Power Dissipation (Max): 600mW (Ta)
Vgs(th) (Max) @ Id: 3V @ 250µA
Supplier Device Package: 6-TSOP
Grade: Automotive
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 60 V
Gate Charge (Qg) (Max) @ Vgs: 18.1 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 942 pF @ 30 V
Qualification: AEC-Q101
auf Bestellung 23094 Stücke:
Lieferzeit 10-14 Tag (e)
8+2.73 EUR
13+1.71 EUR
100+1.14 EUR
500+0.89 EUR
1000+0.81 EUR
Mindestbestellmenge: 8 Stücke
Im Einkaufswagen  Stück im Wert von  UAH
NVGS5120PT1G ON Semiconductor ntgs5120p-d.pdf
auf Bestellung 10286 Stücke:
Lieferzeit 21-28 Tag (e)
Im Einkaufswagen  Stück im Wert von  UAH
NVGS5120PT1G ntgs5120p-d.pdf
NVGS5120PT1G
Hersteller: ONSEMI
Category: SMD P channel transistors
Description: Transistor: P-MOSFET; unipolar; -60V; -2.9A; Idm: -20A; 1.1W; TSOP6
Case: TSOP6
Mounting: SMD
Kind of package: reel; tape
Drain-source voltage: -60V
Pulsed drain current: -20A
Drain current: -2.9A
Gate charge: 18.1nC
On-state resistance: 111mΩ
Power dissipation: 1.1W
Gate-source voltage: ±20V
Polarisation: unipolar
Kind of channel: enhancement
Type of transistor: P-MOSFET
auf Bestellung 2895 Stücke:
Lieferzeit 14-21 Tag (e)
AnzahlPrivatkunde
57+1.51 EUR
70+1.21 EUR
79+1.08 EUR
103+0.83 EUR
115+0.75 EUR
500+0.63 EUR
Mindestbestellmenge: 57 Stücke
Im Einkaufswagen  Stück im Wert von  UAH
NVGS5120PT1G ntgs5120p-d.pdf
NVGS5120PT1G
Hersteller: onsemi
MOSFETs PFET TSOP6 60V 2.5A 111MO
auf Bestellung 184829 Stücke:
Lieferzeit 10-14 Tag (e)
AnzahlPrivatkunde
2+2.51 EUR
10+1.56 EUR
100+1.04 EUR
500+0.82 EUR
1000+0.74 EUR
3000+0.65 EUR
6000+0.61 EUR
Mindestbestellmenge: 2 Stücke
Im Einkaufswagen  Stück im Wert von  UAH
NVGS5120PT1G ntgs5120p-d.pdf
NVGS5120PT1G
Hersteller: onsemi
Description: MOSFET P-CH 60V 1.8A 6TSOP
Packaging: Cut Tape (CT)
Package / Case: SOT-23-6 Thin, TSOT-23-6
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: P-Channel
Current - Continuous Drain (Id) @ 25°C: 1.8A (Ta)
Rds On (Max) @ Id, Vgs: 111mOhm @ 2.9A, 10V
Power Dissipation (Max): 600mW (Ta)
Vgs(th) (Max) @ Id: 3V @ 250µA
Supplier Device Package: 6-TSOP
Grade: Automotive
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 60 V
Gate Charge (Qg) (Max) @ Vgs: 18.1 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 942 pF @ 30 V
Qualification: AEC-Q101
auf Bestellung 23094 Stücke:
Lieferzeit 10-14 Tag (e)
AnzahlPrivatkunde
8+2.73 EUR
13+1.71 EUR
100+1.14 EUR
500+0.89 EUR
1000+0.81 EUR
Mindestbestellmenge: 8 Stücke
Im Einkaufswagen  Stück im Wert von  UAH
NVGS5120PT1G ntgs5120p-d.pdf
Hersteller: ON Semiconductor
auf Bestellung 10286 Stücke:
Lieferzeit 21-28 Tag (e)
Im Einkaufswagen  Stück im Wert von  UAH