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NVH4L060N090SC1

NVH4L060N090SC1 onsemi

NVH4L060N090SC1_D-2400553.pdf Hersteller: onsemi
MOSFET Silicon Carbide (SiC) MOSFET, N-Channel - EliteSiC, 60 mohm, 900 V, M2, TO247-4L
auf Bestellung 464 Stücke:
Lieferzeit 10-14 Tag (e)
Anzahl Preis ohne MwSt
1+29.16 EUR
25+ 23.6 EUR
50+ 23.58 EUR
100+ 22.21 EUR
250+ 22.19 EUR
450+ 20.13 EUR
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Technische Details NVH4L060N090SC1 onsemi

Description: -, Packaging: Tube, Package / Case: TO-247-4, Mounting Type: Through Hole, Operating Temperature: -55°C ~ 175°C (TJ), Technology: SiCFET (Silicon Carbide), FET Type: N-Channel, Current - Continuous Drain (Id) @ 25°C: 46A (Tc), Rds On (Max) @ Id, Vgs: 84mOhm @ 20A, 15V, Power Dissipation (Max): 221W (Tc), Vgs(th) (Max) @ Id: 4.3V @ 5mA, Supplier Device Package: TO-247-4L, Part Status: Active, Drive Voltage (Max Rds On, Min Rds On): 15V, 18V, Vgs (Max): +22V, -8V, Drain to Source Voltage (Vdss): 900 V, Gate Charge (Qg) (Max) @ Vgs: 87 nC @ 15 V, Input Capacitance (Ciss) (Max) @ Vds: 1770 pF @ 450 V.

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NVH4L060N090SC1 NVH4L060N090SC1 Hersteller : onsemi nvh4l060n090sc1-d.pdf Description: -
Packaging: Tube
Package / Case: TO-247-4
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: SiCFET (Silicon Carbide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 46A (Tc)
Rds On (Max) @ Id, Vgs: 84mOhm @ 20A, 15V
Power Dissipation (Max): 221W (Tc)
Vgs(th) (Max) @ Id: 4.3V @ 5mA
Supplier Device Package: TO-247-4L
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 15V, 18V
Vgs (Max): +22V, -8V
Drain to Source Voltage (Vdss): 900 V
Gate Charge (Qg) (Max) @ Vgs: 87 nC @ 15 V
Input Capacitance (Ciss) (Max) @ Vds: 1770 pF @ 450 V
auf Bestellung 900 Stücke:
Lieferzeit 10-14 Tag (e)
Anzahl Preis ohne MwSt
1+49.63 EUR
10+ 44.11 EUR
100+ 38.58 EUR
NVH4L060N090SC1 Hersteller : ON Semiconductor nvh4l060n090sc1-d.pdf Automotive MOSFET
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