NVH4L060N090SC1 onsemi
Hersteller: onsemi
SiC MOSFETs Silicon Carbide (SiC) MOSFET, N-Channel - EliteSiC, 60 mohm, 900 V, M2, TO247-4L
| Anzahl | Privatkunde |
|---|---|
| 1+ | 34.7 EUR |
| 10+ | 30.64 EUR |
| 25+ | 28.08 EUR |
| 50+ | 28.05 EUR |
| 100+ | 26.43 EUR |
| 250+ | 25.61 EUR |
| 450+ | 23.31 EUR |
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10-14 Tag (e)
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Technische Details NVH4L060N090SC1 onsemi
Description: -, Packaging: Tube, Package / Case: TO-247-4, Mounting Type: Through Hole, Operating Temperature: -55°C ~ 175°C (TJ), Technology: SiCFET (Silicon Carbide), FET Type: N-Channel, Current - Continuous Drain (Id) @ 25°C: 46A (Tc), Rds On (Max) @ Id, Vgs: 84mOhm @ 20A, 15V, Power Dissipation (Max): 221W (Tc), Vgs(th) (Max) @ Id: 4.3V @ 5mA, Supplier Device Package: TO-247-4L, Grade: Automotive, Drive Voltage (Max Rds On, Min Rds On): 15V, 18V, Vgs (Max): +22V, -8V, Drain to Source Voltage (Vdss): 900 V, Gate Charge (Qg) (Max) @ Vgs: 87 nC @ 15 V, Input Capacitance (Ciss) (Max) @ Vds: 1770 pF @ 450 V, Qualification: AEC-Q101.
Weitere Produktangebote NVH4L060N090SC1 nach Preis ab 18.83 EUR bis 36.24 EUR
| Foto | Bezeichnung | Hersteller | Beschreibung | Verfügbarkeit | Privatkunde | ||||||||||
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NVH4L060N090SC1 | onsemi |
Description: - Packaging: Tube Package / Case: TO-247-4 Mounting Type: Through Hole Operating Temperature: -55°C ~ 175°C (TJ) Technology: SiCFET (Silicon Carbide) FET Type: N-Channel Current - Continuous Drain (Id) @ 25°C: 46A (Tc) Rds On (Max) @ Id, Vgs: 84mOhm @ 20A, 15V Power Dissipation (Max): 221W (Tc) Vgs(th) (Max) @ Id: 4.3V @ 5mA Supplier Device Package: TO-247-4L Grade: Automotive Drive Voltage (Max Rds On, Min Rds On): 15V, 18V Vgs (Max): +22V, -8V Drain to Source Voltage (Vdss): 900 V Gate Charge (Qg) (Max) @ Vgs: 87 nC @ 15 V Input Capacitance (Ciss) (Max) @ Vds: 1770 pF @ 450 V Qualification: AEC-Q101 |
auf Bestellung 1333 Stücke: Lieferzeit 10-14 Tag (e) |
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| NVH4L060N090SC1 |
|
Hersteller: onsemi
Description: -
Packaging: Tube
Package / Case: TO-247-4
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: SiCFET (Silicon Carbide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 46A (Tc)
Rds On (Max) @ Id, Vgs: 84mOhm @ 20A, 15V
Power Dissipation (Max): 221W (Tc)
Vgs(th) (Max) @ Id: 4.3V @ 5mA
Supplier Device Package: TO-247-4L
Grade: Automotive
Drive Voltage (Max Rds On, Min Rds On): 15V, 18V
Vgs (Max): +22V, -8V
Drain to Source Voltage (Vdss): 900 V
Gate Charge (Qg) (Max) @ Vgs: 87 nC @ 15 V
Input Capacitance (Ciss) (Max) @ Vds: 1770 pF @ 450 V
Qualification: AEC-Q101
Description: -
Packaging: Tube
Package / Case: TO-247-4
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: SiCFET (Silicon Carbide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 46A (Tc)
Rds On (Max) @ Id, Vgs: 84mOhm @ 20A, 15V
Power Dissipation (Max): 221W (Tc)
Vgs(th) (Max) @ Id: 4.3V @ 5mA
Supplier Device Package: TO-247-4L
Grade: Automotive
Drive Voltage (Max Rds On, Min Rds On): 15V, 18V
Vgs (Max): +22V, -8V
Drain to Source Voltage (Vdss): 900 V
Gate Charge (Qg) (Max) @ Vgs: 87 nC @ 15 V
Input Capacitance (Ciss) (Max) @ Vds: 1770 pF @ 450 V
Qualification: AEC-Q101
auf Bestellung 1333 Stücke:
Lieferzeit 10-14 Tag (e)
| Anzahl | Privatkunde |
|---|---|
| 1+ | 36.24 EUR |
| 30+ | 22.66 EUR |
| 60+ | 21.04 EUR |
| 120+ | 19.68 EUR |
| 510+ | 18.83 EUR |