NVHL015N065SC1 onsemi
Hersteller: onsemiDescription: SIC MOS TO247-3L 650V
Packaging: Tube
Package / Case: TO-247-3
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: SiCFET (Silicon Carbide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 163A (Tc)
Rds On (Max) @ Id, Vgs: 18mOhm @ 75A, 12V
Power Dissipation (Max): 643W (Tc)
Vgs(th) (Max) @ Id: 4.3V @ 25mA
Supplier Device Package: TO-247-3
Grade: Automotive
Drive Voltage (Max Rds On, Min Rds On): 15V, 18V
Vgs (Max): +22V, -8V
Drain to Source Voltage (Vdss): 650 V
Gate Charge (Qg) (Max) @ Vgs: 283 nC @ 18 V
Input Capacitance (Ciss) (Max) @ Vds: 4790 pF @ 325 V
Qualification: AEC-Q101
auf Bestellung 2664 Stücke:
Lieferzeit 10-14 Tag (e)
| Anzahl | Preis |
|---|---|
| 1+ | 54.89 EUR |
| 10+ | 40.73 EUR |
| 450+ | 40.32 EUR |
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Technische Details NVHL015N065SC1 onsemi
Description: SIC MOS TO247-3L 650V, Packaging: Tube, Package / Case: TO-247-3, Mounting Type: Through Hole, Operating Temperature: -55°C ~ 175°C (TJ), Technology: SiCFET (Silicon Carbide), FET Type: N-Channel, Current - Continuous Drain (Id) @ 25°C: 163A (Tc), Rds On (Max) @ Id, Vgs: 18mOhm @ 75A, 12V, Power Dissipation (Max): 643W (Tc), Vgs(th) (Max) @ Id: 4.3V @ 25mA, Supplier Device Package: TO-247-3, Grade: Automotive, Drive Voltage (Max Rds On, Min Rds On): 15V, 18V, Vgs (Max): +22V, -8V, Drain to Source Voltage (Vdss): 650 V, Gate Charge (Qg) (Max) @ Vgs: 283 nC @ 18 V, Input Capacitance (Ciss) (Max) @ Vds: 4790 pF @ 325 V, Qualification: AEC-Q101.
Weitere Produktangebote NVHL015N065SC1 nach Preis ab 41.57 EUR bis 55.04 EUR
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NVHL015N065SC1 | Hersteller : onsemi |
SiC MOSFETs Silicon Carbide (SiC) MOSFET, N-Channel - EliteSiC, 12 mohm, 650V, M2, TO247-3L |
auf Bestellung 400 Stücke: Lieferzeit 10-14 Tag (e) |
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NVHL015N065SC1 | Hersteller : ON Semiconductor |
Trans MOSFET N-CH SiC 650V 163A 3-Pin(3+Tab) TO-247 Tube Automotive AEC-Q101 |
Produkt ist nicht verfügbar |
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| NVHL015N065SC1 | Hersteller : ON Semiconductor |
NVHL015N065SC1 |
Produkt ist nicht verfügbar |
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| NVHL015N065SC1 | Hersteller : ONSEMI |
Category: THT N channel transistors Description: Transistor: N-MOSFET; SiC; unipolar; 650V; 115A; Idm: 484A; 321W Type of transistor: N-MOSFET Technology: SiC Polarisation: unipolar Drain-source voltage: 650V Drain current: 115A Pulsed drain current: 484A Power dissipation: 321W Case: TO247-3 Gate-source voltage: -5...18V On-state resistance: 16mΩ Mounting: THT Gate charge: 283nC Kind of package: tube Kind of channel: enhancement |
Produkt ist nicht verfügbar |