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Technische Details NVHL050N65S3HF onsemi
Description: MOSFET N-CH 650V 58A TO247-3, Packaging: Tube, Package / Case: TO-247-3, Mounting Type: Through Hole, Operating Temperature: -55°C ~ 150°C (TJ), Technology: MOSFET (Metal Oxide), FET Type: N-Channel, Current - Continuous Drain (Id) @ 25°C: 58A (Tc), Rds On (Max) @ Id, Vgs: 50mOhm @ 29A, 10V, Power Dissipation (Max): 403W (Tc), Vgs(th) (Max) @ Id: 5V @ 1.7mA, Supplier Device Package: TO-247-3, Part Status: Active, Drive Voltage (Max Rds On, Min Rds On): 10V, Vgs (Max): ±30V, Drain to Source Voltage (Vdss): 650 V, Gate Charge (Qg) (Max) @ Vgs: 119 nC @ 10 V, Input Capacitance (Ciss) (Max) @ Vds: 4880 pF @ 400 V, Grade: Automotive, Qualification: AEC-Q101.
Weitere Produktangebote NVHL050N65S3HF nach Preis ab 8.95 EUR bis 19.18 EUR
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NVHL050N65S3HF | onsemi |
 Description: MOSFET N-CH 650V 58A TO247-3Packaging: Tube Package / Case: TO-247-3 Mounting Type: Through Hole Operating Temperature: -55°C ~ 150°C (TJ) Technology: MOSFET (Metal Oxide) FET Type: N-Channel Current - Continuous Drain (Id) @ 25°C: 58A (Tc) Rds On (Max) @ Id, Vgs: 50mOhm @ 29A, 10V Power Dissipation (Max): 403W (Tc) Vgs(th) (Max) @ Id: 5V @ 1.7mA Supplier Device Package: TO-247-3 Part Status: Active Drive Voltage (Max Rds On, Min Rds On): 10V Vgs (Max): ±30V Drain to Source Voltage (Vdss): 650 V Gate Charge (Qg) (Max) @ Vgs: 119 nC @ 10 V Input Capacitance (Ciss) (Max) @ Vds: 4880 pF @ 400 V Grade: Automotive Qualification: AEC-Q101 |
auf Bestellung 527 Stücke: Lieferzeit 10-14 Tag (e) |
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| NVHL050N65S3HF | ON Semiconductor |
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auf Bestellung 40 Stücke: Lieferzeit 21-28 Tag (e) |
Im Einkaufswagen Stück im Wert von UAH |
| NVHL050N65S3HF |
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Hersteller: onsemi
Description: MOSFET N-CH 650V 58A TO247-3
Packaging: Tube
Package / Case: TO-247-3
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 58A (Tc)
Rds On (Max) @ Id, Vgs: 50mOhm @ 29A, 10V
Power Dissipation (Max): 403W (Tc)
Vgs(th) (Max) @ Id: 5V @ 1.7mA
Supplier Device Package: TO-247-3
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±30V
Drain to Source Voltage (Vdss): 650 V
Gate Charge (Qg) (Max) @ Vgs: 119 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 4880 pF @ 400 V
Grade: Automotive
Qualification: AEC-Q101
Description: MOSFET N-CH 650V 58A TO247-3
Packaging: Tube
Package / Case: TO-247-3
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 58A (Tc)
Rds On (Max) @ Id, Vgs: 50mOhm @ 29A, 10V
Power Dissipation (Max): 403W (Tc)
Vgs(th) (Max) @ Id: 5V @ 1.7mA
Supplier Device Package: TO-247-3
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±30V
Drain to Source Voltage (Vdss): 650 V
Gate Charge (Qg) (Max) @ Vgs: 119 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 4880 pF @ 400 V
Grade: Automotive
Qualification: AEC-Q101
auf Bestellung 527 Stücke:
Lieferzeit 10-14 Tag (e)
| Anzahl | Privatkunde |
|---|---|
| 2+ | 19.18 EUR |
| 30+ | 11.39 EUR |
| 120+ | 9.69 EUR |
| 510+ | 8.95 EUR |
| NVHL050N65S3HF |
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Hersteller: ON Semiconductor
auf Bestellung 40 Stücke:
Lieferzeit 21-28 Tag (e)