NVHL065N65S3F onsemi
Hersteller: onsemiDescription: SUPERFET3 650V TO247
Packaging: Tube
Package / Case: TO-247-3
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 46A (Tc)
Rds On (Max) @ Id, Vgs: 65mOhm @ 23A, 10V
Power Dissipation (Max): 337W (Tc)
Vgs(th) (Max) @ Id: 5V @ 1.3mA
Supplier Device Package: TO-247-3
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±30V
Drain to Source Voltage (Vdss): 650 V
Gate Charge (Qg) (Max) @ Vgs: 98 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 4075 pF @ 400 V
Grade: Automotive
Qualification: AEC-Q101
auf Bestellung 1298 Stücke:
Lieferzeit 10-14 Tag (e)
| Anzahl | Preis |
|---|---|
| 2+ | 14.34 EUR |
| 30+ | 8.45 EUR |
| 120+ | 7.15 EUR |
| 510+ | 6.48 EUR |
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Technische Details NVHL065N65S3F onsemi
Description: SUPERFET3 650V TO247, Packaging: Tube, Package / Case: TO-247-3, Mounting Type: Through Hole, Operating Temperature: -55°C ~ 150°C (TJ), Technology: MOSFET (Metal Oxide), FET Type: N-Channel, Current - Continuous Drain (Id) @ 25°C: 46A (Tc), Rds On (Max) @ Id, Vgs: 65mOhm @ 23A, 10V, Power Dissipation (Max): 337W (Tc), Vgs(th) (Max) @ Id: 5V @ 1.3mA, Supplier Device Package: TO-247-3, Drive Voltage (Max Rds On, Min Rds On): 10V, Vgs (Max): ±30V, Drain to Source Voltage (Vdss): 650 V, Gate Charge (Qg) (Max) @ Vgs: 98 nC @ 10 V, Input Capacitance (Ciss) (Max) @ Vds: 4075 pF @ 400 V, Grade: Automotive, Qualification: AEC-Q101.
Weitere Produktangebote NVHL065N65S3F nach Preis ab 7.39 EUR bis 14.06 EUR
| Foto | Bezeichnung | Hersteller | Beschreibung |
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| NVHL065N65S3F | Hersteller : onsemi |
MOSFETs SUPERFET III MOSFET, 650V, 65mohm |
auf Bestellung 450 Stücke: Lieferzeit 10-14 Tag (e) |
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| NVHL065N65S3F | Hersteller : ON Semiconductor |
NVHL065N65S3F |
Produkt ist nicht verfügbar |
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NVHL065N65S3F | Hersteller : ON Semiconductor |
Trans MOSFET N-CH 650V 46A 3-Pin(3+Tab) TO-247 Tube Automotive AEC-Q101 |
Produkt ist nicht verfügbar |
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| NVHL065N65S3F | Hersteller : ONSEMI |
Category: THT N channel transistors Description: Transistor: N-MOSFET; unipolar; 650V; 46A; Idm: 115A; 337W; TO247-3 Type of transistor: N-MOSFET Polarisation: unipolar Drain-source voltage: 650V Drain current: 46A Pulsed drain current: 115A Power dissipation: 337W Case: TO247-3 Gate-source voltage: ±30V On-state resistance: 65mΩ Mounting: THT Gate charge: 98nC Kind of package: tube Kind of channel: enhancement |
Produkt ist nicht verfügbar |