NVHL075N065SC1 ON Semiconductor
Hersteller: ON Semiconductor
Trans MOSFET N-CH SiC 650V 38A 3-Pin(3+Tab) TO-247 Tube Automotive AEC-Q101
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Technische Details NVHL075N065SC1 ON Semiconductor
Description: SILICON CARBIDE (SIC) MOSFET, NC, Packaging: Tube, Package / Case: TO-247-3, Mounting Type: Through Hole, Operating Temperature: -55°C ~ 175°C (TJ), Technology: SiCFET (Silicon Carbide), FET Type: N-Channel, Current - Continuous Drain (Id) @ 25°C: 38A (Tc), Rds On (Max) @ Id, Vgs: 85mOhm @ 15A, 18V, Power Dissipation (Max): 148W (Tc), Vgs(th) (Max) @ Id: 4.3V @ 5mA, Supplier Device Package: TO-247-3, Grade: Automotive, Drive Voltage (Max Rds On, Min Rds On): 15V, 18V, Vgs (Max): +22V, -8V, Drain to Source Voltage (Vdss): 650 V, Gate Charge (Qg) (Max) @ Vgs: 61 nC @ 18 V, Input Capacitance (Ciss) (Max) @ Vds: 1196 pF @ 325 V, Qualification: AEC-Q101.
Weitere Produktangebote NVHL075N065SC1 nach Preis ab 13.74 EUR bis 28.42 EUR
| Foto | Bezeichnung | Hersteller | Beschreibung | Verfügbarkeit | Privatkunde | ||||||||||
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NVHL075N065SC1 | onsemi |
Description: SILICON CARBIDE (SIC) MOSFET, NC Packaging: Tube Package / Case: TO-247-3 Mounting Type: Through Hole Operating Temperature: -55°C ~ 175°C (TJ) Technology: SiCFET (Silicon Carbide) FET Type: N-Channel Current - Continuous Drain (Id) @ 25°C: 38A (Tc) Rds On (Max) @ Id, Vgs: 85mOhm @ 15A, 18V Power Dissipation (Max): 148W (Tc) Vgs(th) (Max) @ Id: 4.3V @ 5mA Supplier Device Package: TO-247-3 Grade: Automotive Drive Voltage (Max Rds On, Min Rds On): 15V, 18V Vgs (Max): +22V, -8V Drain to Source Voltage (Vdss): 650 V Gate Charge (Qg) (Max) @ Vgs: 61 nC @ 18 V Input Capacitance (Ciss) (Max) @ Vds: 1196 pF @ 325 V Qualification: AEC-Q101 |
auf Bestellung 407 Stücke: Lieferzeit 10-14 Tag (e) |
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NVHL075N065SC1 | onsemi |
SiC MOSFETs SIC MOS TO247-3L 650V 75MOHM |
auf Bestellung 366 Stücke: Lieferzeit 10-14 Tag (e) |
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NVHL075N065SC1 | ONSEMI |
Description: ONSEMI - NVHL075N065SC1 - Siliziumkarbid-MOSFET, Eins, n-Kanal, 38 A, 650 V, 0.085 ohm, TO-247 tariffCode: 85412900 Drain-Source-Spannung Vds: 650V rohsCompliant: Y-EX Dauer-Drainstrom Id: 38A hazardous: false rohsPhthalatesCompliant: YES usEccn: EAR99 Gate-Source-Schwellenspannung, max.: 4.3V MOSFET-Modul-Konfiguration: Eins euEccn: NLR Verlustleistung: 148W Bauform - Transistor: TO-247 Anzahl der Pins: 3Pin(s) Produktpalette: EliteSiC Series productTraceability: Yes-Date/Lot Code Kanaltyp: n-Kanal Rds(on)-Prüfspannung: 18V Betriebstemperatur, max.: 175°C Drain-Source-Durchgangswiderstand: 0.085ohm SVHC: No SVHC (15-Jan-2018) |
auf Bestellung 450 Stücke: Lieferzeit 14-21 Tag (e) |
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| NVHL075N065SC1 |
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Hersteller: onsemi
Description: SILICON CARBIDE (SIC) MOSFET, NC
Packaging: Tube
Package / Case: TO-247-3
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: SiCFET (Silicon Carbide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 38A (Tc)
Rds On (Max) @ Id, Vgs: 85mOhm @ 15A, 18V
Power Dissipation (Max): 148W (Tc)
Vgs(th) (Max) @ Id: 4.3V @ 5mA
Supplier Device Package: TO-247-3
Grade: Automotive
Drive Voltage (Max Rds On, Min Rds On): 15V, 18V
Vgs (Max): +22V, -8V
Drain to Source Voltage (Vdss): 650 V
Gate Charge (Qg) (Max) @ Vgs: 61 nC @ 18 V
Input Capacitance (Ciss) (Max) @ Vds: 1196 pF @ 325 V
Qualification: AEC-Q101
Description: SILICON CARBIDE (SIC) MOSFET, NC
Packaging: Tube
Package / Case: TO-247-3
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: SiCFET (Silicon Carbide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 38A (Tc)
Rds On (Max) @ Id, Vgs: 85mOhm @ 15A, 18V
Power Dissipation (Max): 148W (Tc)
Vgs(th) (Max) @ Id: 4.3V @ 5mA
Supplier Device Package: TO-247-3
Grade: Automotive
Drive Voltage (Max Rds On, Min Rds On): 15V, 18V
Vgs (Max): +22V, -8V
Drain to Source Voltage (Vdss): 650 V
Gate Charge (Qg) (Max) @ Vgs: 61 nC @ 18 V
Input Capacitance (Ciss) (Max) @ Vds: 1196 pF @ 325 V
Qualification: AEC-Q101
auf Bestellung 407 Stücke:
Lieferzeit 10-14 Tag (e)
| Anzahl | Privatkunde |
|---|---|
| 1+ | 26.32 EUR |
| 30+ | 16.01 EUR |
| 120+ | 13.74 EUR |
| NVHL075N065SC1 |
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Hersteller: onsemi
SiC MOSFETs SIC MOS TO247-3L 650V 75MOHM
SiC MOSFETs SIC MOS TO247-3L 650V 75MOHM
auf Bestellung 366 Stücke:
Lieferzeit 10-14 Tag (e)
| Anzahl | Privatkunde |
|---|---|
| 1+ | 26.43 EUR |
| 10+ | 16.06 EUR |
| 120+ | 14.85 EUR |
| 510+ | 14.49 EUR |
| NVHL075N065SC1 |
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Hersteller: ONSEMI
Description: ONSEMI - NVHL075N065SC1 - Siliziumkarbid-MOSFET, Eins, n-Kanal, 38 A, 650 V, 0.085 ohm, TO-247
tariffCode: 85412900
Drain-Source-Spannung Vds: 650V
rohsCompliant: Y-EX
Dauer-Drainstrom Id: 38A
hazardous: false
rohsPhthalatesCompliant: YES
usEccn: EAR99
Gate-Source-Schwellenspannung, max.: 4.3V
MOSFET-Modul-Konfiguration: Eins
euEccn: NLR
Verlustleistung: 148W
Bauform - Transistor: TO-247
Anzahl der Pins: 3Pin(s)
Produktpalette: EliteSiC Series
productTraceability: Yes-Date/Lot Code
Kanaltyp: n-Kanal
Rds(on)-Prüfspannung: 18V
Betriebstemperatur, max.: 175°C
Drain-Source-Durchgangswiderstand: 0.085ohm
SVHC: No SVHC (15-Jan-2018)
Description: ONSEMI - NVHL075N065SC1 - Siliziumkarbid-MOSFET, Eins, n-Kanal, 38 A, 650 V, 0.085 ohm, TO-247
tariffCode: 85412900
Drain-Source-Spannung Vds: 650V
rohsCompliant: Y-EX
Dauer-Drainstrom Id: 38A
hazardous: false
rohsPhthalatesCompliant: YES
usEccn: EAR99
Gate-Source-Schwellenspannung, max.: 4.3V
MOSFET-Modul-Konfiguration: Eins
euEccn: NLR
Verlustleistung: 148W
Bauform - Transistor: TO-247
Anzahl der Pins: 3Pin(s)
Produktpalette: EliteSiC Series
productTraceability: Yes-Date/Lot Code
Kanaltyp: n-Kanal
Rds(on)-Prüfspannung: 18V
Betriebstemperatur, max.: 175°C
Drain-Source-Durchgangswiderstand: 0.085ohm
SVHC: No SVHC (15-Jan-2018)
auf Bestellung 450 Stücke:
Lieferzeit 14-21 Tag (e)
| Anzahl | Privatkunde |
|---|---|
| 9+ | 28.42 EUR |
| 10+ | 22.71 EUR |
| 50+ | 15.68 EUR |
| 100+ | 15.05 EUR |
| 250+ | 14.41 EUR |