| Anzahl | Preis |
|---|---|
| 4+ | 0.83 EUR |
| 10+ | 0.51 EUR |
| 100+ | 0.33 EUR |
| 500+ | 0.25 EUR |
| 1000+ | 0.22 EUR |
| 3000+ | 0.19 EUR |
| 6000+ | 0.18 EUR |
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Technische Details NVJD4158CT1G onsemi
Description: MOSFET N/P-CH 30V 0.25A SC88, Qualification: AEC-Q101, Grade: Automotive, Supplier Device Package: SC-88/SC70-6/SOT-363, Vgs(th) (Max) @ Id: 1.5V @ 100µA, Gate Charge (Qg) (Max) @ Vgs: 1.5nC @ 5V, 3.5nC @ 5V, Rds On (Max) @ Id, Vgs: 1.5Ohm @ 10mA, 4.5V, Input Capacitance (Ciss) (Max) @ Vds: 20pF @ 5V, Current - Continuous Drain (Id) @ 25°C: 250mA (Ta), 880mA (Ta), Drain to Source Voltage (Vdss): 30V, Power - Max: 270mW (Ta), Technology: MOSFET (Metal Oxide), Operating Temperature: -55°C ~ 150°C (TJ), Configuration: N and P-Channel, Mounting Type: Surface Mount, Package / Case: 6-TSSOP, SC-88, SOT-363, Packaging: Tape & Reel (TR).
Weitere Produktangebote NVJD4158CT1G
| Foto | Bezeichnung | Hersteller | Beschreibung |
Verfügbarkeit |
Preis |
|---|---|---|---|---|---|
 |
NVJD4158CT1G | onsemi |
 Description: MOSFET N/P-CH 30V 0.25A SC88Qualification: AEC-Q101 Grade: Automotive Supplier Device Package: SC-88/SC70-6/SOT-363 Vgs(th) (Max) @ Id: 1.5V @ 100µA Gate Charge (Qg) (Max) @ Vgs: 1.5nC @ 5V, 3.5nC @ 5V Rds On (Max) @ Id, Vgs: 1.5Ohm @ 10mA, 4.5V Input Capacitance (Ciss) (Max) @ Vds: 20pF @ 5V Current - Continuous Drain (Id) @ 25°C: 250mA (Ta), 880mA (Ta) Drain to Source Voltage (Vdss): 30V Power - Max: 270mW (Ta) Technology: MOSFET (Metal Oxide) Operating Temperature: -55°C ~ 150°C (TJ) Configuration: N and P-Channel Mounting Type: Surface Mount Package / Case: 6-TSSOP, SC-88, SOT-363 Packaging: Tape & Reel (TR) |
Produkt ist nicht verfügbar |
Mindestbestellmenge: 3000 Stücke Im Einkaufswagen Stück im Wert von UAH |
|
|
NVJD4158CT1G | onsemi |
Description: MOSFET N/P-CH 30V 0.25A SC88 Qualification: AEC-Q101 Grade: Automotive Supplier Device Package: SC-88/SC70-6/SOT-363 Vgs(th) (Max) @ Id: 1.5V @ 100µA Gate Charge (Qg) (Max) @ Vgs: 1.5nC @ 5V, 3.5nC @ 5V Rds On (Max) @ Id, Vgs: 1.5Ohm @ 10mA, 4.5V Input Capacitance (Ciss) (Max) @ Vds: 20pF @ 5V Current - Continuous Drain (Id) @ 25°C: 250mA (Ta), 880mA (Ta) Drain to Source Voltage (Vdss): 30V Power - Max: 270mW (Ta) Technology: MOSFET (Metal Oxide) Operating Temperature: -55°C ~ 150°C (TJ) Configuration: N and P-Channel Mounting Type: Surface Mount Package / Case: 6-TSSOP, SC-88, SOT-363 Packaging: Cut Tape (CT) |
Produkt ist nicht verfügbar |
Im Einkaufswagen Stück im Wert von UAH |
| NVJD4158CT1G |
|
Hersteller: onsemi
Description: MOSFET N/P-CH 30V 0.25A SC88
Qualification: AEC-Q101
Grade: Automotive
Supplier Device Package: SC-88/SC70-6/SOT-363
Vgs(th) (Max) @ Id: 1.5V @ 100µA
Gate Charge (Qg) (Max) @ Vgs: 1.5nC @ 5V, 3.5nC @ 5V
Rds On (Max) @ Id, Vgs: 1.5Ohm @ 10mA, 4.5V
Input Capacitance (Ciss) (Max) @ Vds: 20pF @ 5V
Current - Continuous Drain (Id) @ 25°C: 250mA (Ta), 880mA (Ta)
Drain to Source Voltage (Vdss): 30V
Power - Max: 270mW (Ta)
Technology: MOSFET (Metal Oxide)
Operating Temperature: -55°C ~ 150°C (TJ)
Configuration: N and P-Channel
Mounting Type: Surface Mount
Package / Case: 6-TSSOP, SC-88, SOT-363
Packaging: Tape & Reel (TR)
Description: MOSFET N/P-CH 30V 0.25A SC88
Qualification: AEC-Q101
Grade: Automotive
Supplier Device Package: SC-88/SC70-6/SOT-363
Vgs(th) (Max) @ Id: 1.5V @ 100µA
Gate Charge (Qg) (Max) @ Vgs: 1.5nC @ 5V, 3.5nC @ 5V
Rds On (Max) @ Id, Vgs: 1.5Ohm @ 10mA, 4.5V
Input Capacitance (Ciss) (Max) @ Vds: 20pF @ 5V
Current - Continuous Drain (Id) @ 25°C: 250mA (Ta), 880mA (Ta)
Drain to Source Voltage (Vdss): 30V
Power - Max: 270mW (Ta)
Technology: MOSFET (Metal Oxide)
Operating Temperature: -55°C ~ 150°C (TJ)
Configuration: N and P-Channel
Mounting Type: Surface Mount
Package / Case: 6-TSSOP, SC-88, SOT-363
Packaging: Tape & Reel (TR)
Produkt ist nicht verfügbar
Mindestbestellmenge: 3000 Stücke
Im Einkaufswagen
Stück im Wert von UAH
| NVJD4158CT1G |
|
Hersteller: onsemi
Description: MOSFET N/P-CH 30V 0.25A SC88
Qualification: AEC-Q101
Grade: Automotive
Supplier Device Package: SC-88/SC70-6/SOT-363
Vgs(th) (Max) @ Id: 1.5V @ 100µA
Gate Charge (Qg) (Max) @ Vgs: 1.5nC @ 5V, 3.5nC @ 5V
Rds On (Max) @ Id, Vgs: 1.5Ohm @ 10mA, 4.5V
Input Capacitance (Ciss) (Max) @ Vds: 20pF @ 5V
Current - Continuous Drain (Id) @ 25°C: 250mA (Ta), 880mA (Ta)
Drain to Source Voltage (Vdss): 30V
Power - Max: 270mW (Ta)
Technology: MOSFET (Metal Oxide)
Operating Temperature: -55°C ~ 150°C (TJ)
Configuration: N and P-Channel
Mounting Type: Surface Mount
Package / Case: 6-TSSOP, SC-88, SOT-363
Packaging: Cut Tape (CT)
Description: MOSFET N/P-CH 30V 0.25A SC88
Qualification: AEC-Q101
Grade: Automotive
Supplier Device Package: SC-88/SC70-6/SOT-363
Vgs(th) (Max) @ Id: 1.5V @ 100µA
Gate Charge (Qg) (Max) @ Vgs: 1.5nC @ 5V, 3.5nC @ 5V
Rds On (Max) @ Id, Vgs: 1.5Ohm @ 10mA, 4.5V
Input Capacitance (Ciss) (Max) @ Vds: 20pF @ 5V
Current - Continuous Drain (Id) @ 25°C: 250mA (Ta), 880mA (Ta)
Drain to Source Voltage (Vdss): 30V
Power - Max: 270mW (Ta)
Technology: MOSFET (Metal Oxide)
Operating Temperature: -55°C ~ 150°C (TJ)
Configuration: N and P-Channel
Mounting Type: Surface Mount
Package / Case: 6-TSSOP, SC-88, SOT-363
Packaging: Cut Tape (CT)
Produkt ist nicht verfügbar
Im Einkaufswagen
Stück im Wert von UAH