NVJS4405NT1G onsemi
Hersteller: onsemi
MOSFET Single N-Channel Small Signal MOSFET 25V, 1.2A, 350mohm Automotive Version of the NTJS4405N
| Anzahl | Preis |
|---|---|
| 4+ | 0.74 EUR |
| 10+ | 0.56 EUR |
| 100+ | 0.24 EUR |
| 1000+ | 0.18 EUR |
| 3000+ | 0.16 EUR |
| 9000+ | 0.14 EUR |
| 24000+ | 0.13 EUR |
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Technische Details NVJS4405NT1G onsemi
Description: MOSFET N-CH 25V 1A SC88, Input Capacitance (Ciss) (Max) @ Vds: 60 pF @ 10 V, Gate Charge (Qg) (Max) @ Vgs: 1.5 nC @ 4.5 V, Drain to Source Voltage (Vdss): 25 V, Vgs (Max): ±8V, Drive Voltage (Max Rds On, Min Rds On): 2.7V, 4.5V, Part Status: Active, Supplier Device Package: SC-88/SC70-6/SOT-363, Vgs(th) (Max) @ Id: 1.5V @ 250µA, Power Dissipation (Max): 630mW (Ta), Rds On (Max) @ Id, Vgs: 350mOhm @ 600mA, 4.5V, Current - Continuous Drain (Id) @ 25°C: 1A (Ta), FET Type: N-Channel, Technology: MOSFET (Metal Oxide), Operating Temperature: -55°C ~ 150°C (TJ), Mounting Type: Surface Mount, Package / Case: 6-TSSOP, SC-88, SOT-363, Packaging: Tape & Reel (TR).
Weitere Produktangebote NVJS4405NT1G nach Preis ab 0.2 EUR bis 0.83 EUR
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NVJS4405NT1G | onsemi |
Description: MOSFET N-CH 25V 1A SC88 Input Capacitance (Ciss) (Max) @ Vds: 60 pF @ 10 V Gate Charge (Qg) (Max) @ Vgs: 1.5 nC @ 4.5 V Drain to Source Voltage (Vdss): 25 V Vgs (Max): ±8V Drive Voltage (Max Rds On, Min Rds On): 2.7V, 4.5V Part Status: Active Supplier Device Package: SC-88/SC70-6/SOT-363 Vgs(th) (Max) @ Id: 1.5V @ 250µA Power Dissipation (Max): 630mW (Ta) Rds On (Max) @ Id, Vgs: 350mOhm @ 600mA, 4.5V Current - Continuous Drain (Id) @ 25°C: 1A (Ta) FET Type: N-Channel Technology: MOSFET (Metal Oxide) Operating Temperature: -55°C ~ 150°C (TJ) Mounting Type: Surface Mount Package / Case: 6-TSSOP, SC-88, SOT-363 Packaging: Cut Tape (CT) |
auf Bestellung 2949 Stücke: Lieferzeit 10-14 Tag (e) |
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| NVJS4405NT1G | ON Semiconductor |
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auf Bestellung 3000 Stücke: Lieferzeit 21-28 Tag (e) |
Im Einkaufswagen Stück im Wert von UAH |
| NVJS4405NT1G |
|
Hersteller: onsemi
Description: MOSFET N-CH 25V 1A SC88
Input Capacitance (Ciss) (Max) @ Vds: 60 pF @ 10 V
Gate Charge (Qg) (Max) @ Vgs: 1.5 nC @ 4.5 V
Drain to Source Voltage (Vdss): 25 V
Vgs (Max): ±8V
Drive Voltage (Max Rds On, Min Rds On): 2.7V, 4.5V
Part Status: Active
Supplier Device Package: SC-88/SC70-6/SOT-363
Vgs(th) (Max) @ Id: 1.5V @ 250µA
Power Dissipation (Max): 630mW (Ta)
Rds On (Max) @ Id, Vgs: 350mOhm @ 600mA, 4.5V
Current - Continuous Drain (Id) @ 25°C: 1A (Ta)
FET Type: N-Channel
Technology: MOSFET (Metal Oxide)
Operating Temperature: -55°C ~ 150°C (TJ)
Mounting Type: Surface Mount
Package / Case: 6-TSSOP, SC-88, SOT-363
Packaging: Cut Tape (CT)
Description: MOSFET N-CH 25V 1A SC88
Input Capacitance (Ciss) (Max) @ Vds: 60 pF @ 10 V
Gate Charge (Qg) (Max) @ Vgs: 1.5 nC @ 4.5 V
Drain to Source Voltage (Vdss): 25 V
Vgs (Max): ±8V
Drive Voltage (Max Rds On, Min Rds On): 2.7V, 4.5V
Part Status: Active
Supplier Device Package: SC-88/SC70-6/SOT-363
Vgs(th) (Max) @ Id: 1.5V @ 250µA
Power Dissipation (Max): 630mW (Ta)
Rds On (Max) @ Id, Vgs: 350mOhm @ 600mA, 4.5V
Current - Continuous Drain (Id) @ 25°C: 1A (Ta)
FET Type: N-Channel
Technology: MOSFET (Metal Oxide)
Operating Temperature: -55°C ~ 150°C (TJ)
Mounting Type: Surface Mount
Package / Case: 6-TSSOP, SC-88, SOT-363
Packaging: Cut Tape (CT)
auf Bestellung 2949 Stücke:
Lieferzeit 10-14 Tag (e)| Anzahl | Preis |
|---|---|
| 22+ | 0.83 EUR |
| 29+ | 0.62 EUR |
| 100+ | 0.38 EUR |
| 500+ | 0.26 EUR |
| 1000+ | 0.2 EUR |
| NVJS4405NT1G |
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Hersteller: ON Semiconductor
auf Bestellung 3000 Stücke:
Lieferzeit 21-28 Tag (e)Im Einkaufswagen Stück im Wert von UAH