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NVLJWD023N04CLTAG

NVLJWD023N04CLTAG onsemi

nvljwd023n04cl-d.pdf
Hersteller: onsemi
Description: MOSFET 2N-CH 40V 7A 6WDFNW
Drain to Source Voltage (Vdss): 40V
Power - Max: 2W (Ta), 24W (Tc)
Technology: MOSFET (Metal Oxide)
Operating Temperature: -55°C ~ 175°C (TJ)
Configuration: 2 N-Channel (Dual)
Mounting Type: Surface Mount, Wettable Flank
Package / Case: 6-WDFN Exposed Pad
Packaging: Tape & Reel (TR)
Part Status: Active
Supplier Device Package: 6-WDFNW (2.2x2.3)
Vgs(th) (Max) @ Id: 2V @ 13µA
Gate Charge (Qg) (Max) @ Vgs: 9nC @ 10V
Rds On (Max) @ Id, Vgs: 23mOhm @ 5A, 10V
Input Capacitance (Ciss) (Max) @ Vds: 440pF @ 25V
Current - Continuous Drain (Id) @ 25°C: 7A (Ta), 25A (Tc)
Qualification: AEC-Q101
Grade: Automotive
auf Bestellung 3000 Stücke:
Lieferzeit 10-14 Tag (e)
Anzahl Preis
3000+0.53 EUR
Mindestbestellmenge: 3000
Im Einkaufswagen  Stück im Wert von  UAH
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Technische Details NVLJWD023N04CLTAG onsemi

Description: MOSFET 2N-CH 40V 7A 6WDFNW, Drain to Source Voltage (Vdss): 40V, Power - Max: 2W (Ta), 24W (Tc), Technology: MOSFET (Metal Oxide), Operating Temperature: -55°C ~ 175°C (TJ), Configuration: 2 N-Channel (Dual), Mounting Type: Surface Mount, Wettable Flank, Package / Case: 6-WDFN Exposed Pad, Packaging: Tape & Reel (TR), Part Status: Active, Supplier Device Package: 6-WDFNW (2.2x2.3), Vgs(th) (Max) @ Id: 2V @ 13µA, Gate Charge (Qg) (Max) @ Vgs: 9nC @ 10V, Rds On (Max) @ Id, Vgs: 23mOhm @ 5A, 10V, Input Capacitance (Ciss) (Max) @ Vds: 440pF @ 25V, Current - Continuous Drain (Id) @ 25°C: 7A (Ta), 25A (Tc), Qualification: AEC-Q101, Grade: Automotive.

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NVLJWD023N04CLTAG NVLJWD023N04CLTAG onsemi NVLJWD023N04CL-D.PDF MOSFETs Single N-Channel uCool Power MOSFET 40V 25A 23mohm
auf Bestellung 2938 Stücke:
Lieferzeit 10-14 Tag (e)
3+1.15 EUR
10+0.73 EUR
100+0.6 EUR
500+0.57 EUR
1000+0.55 EUR
3000+0.52 EUR
6000+0.49 EUR
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NVLJWD023N04CLTAG NVLJWD023N04CLTAG onsemi nvljwd023n04cl-d.pdf Description: MOSFET 2N-CH 40V 7A 6WDFNW
Qualification: AEC-Q101
Grade: Automotive
Supplier Device Package: 6-WDFNW (2.2x2.3)
Vgs(th) (Max) @ Id: 2V @ 13µA
Gate Charge (Qg) (Max) @ Vgs: 9nC @ 10V
Rds On (Max) @ Id, Vgs: 23mOhm @ 5A, 10V
Input Capacitance (Ciss) (Max) @ Vds: 440pF @ 25V
Current - Continuous Drain (Id) @ 25°C: 7A (Ta), 25A (Tc)
Drain to Source Voltage (Vdss): 40V
Power - Max: 2W (Ta), 24W (Tc)
Technology: MOSFET (Metal Oxide)
Operating Temperature: -55°C ~ 175°C (TJ)
Configuration: 2 N-Channel (Dual)
Mounting Type: Surface Mount, Wettable Flank
Package / Case: 6-WDFN Exposed Pad
Packaging: Cut Tape (CT)
auf Bestellung 4845 Stücke:
Lieferzeit 10-14 Tag (e)
16+1.16 EUR
22+0.82 EUR
25+0.74 EUR
100+0.65 EUR
250+0.6 EUR
500+0.58 EUR
1000+0.55 EUR
Mindestbestellmenge: 16
Im Einkaufswagen  Stück im Wert von  UAH
NVLJWD023N04CLTAG NVLJWD023N04CL-D.PDF
NVLJWD023N04CLTAG
Hersteller: onsemi
MOSFETs Single N-Channel uCool Power MOSFET 40V 25A 23mohm
auf Bestellung 2938 Stücke:
Lieferzeit 10-14 Tag (e)
Anzahl Preis
3+1.15 EUR
10+0.73 EUR
100+0.6 EUR
500+0.57 EUR
1000+0.55 EUR
3000+0.52 EUR
6000+0.49 EUR
Mindestbestellmenge: 3
Im Einkaufswagen  Stück im Wert von  UAH
NVLJWD023N04CLTAG nvljwd023n04cl-d.pdf
NVLJWD023N04CLTAG
Hersteller: onsemi
Description: MOSFET 2N-CH 40V 7A 6WDFNW
Qualification: AEC-Q101
Grade: Automotive
Supplier Device Package: 6-WDFNW (2.2x2.3)
Vgs(th) (Max) @ Id: 2V @ 13µA
Gate Charge (Qg) (Max) @ Vgs: 9nC @ 10V
Rds On (Max) @ Id, Vgs: 23mOhm @ 5A, 10V
Input Capacitance (Ciss) (Max) @ Vds: 440pF @ 25V
Current - Continuous Drain (Id) @ 25°C: 7A (Ta), 25A (Tc)
Drain to Source Voltage (Vdss): 40V
Power - Max: 2W (Ta), 24W (Tc)
Technology: MOSFET (Metal Oxide)
Operating Temperature: -55°C ~ 175°C (TJ)
Configuration: 2 N-Channel (Dual)
Mounting Type: Surface Mount, Wettable Flank
Package / Case: 6-WDFN Exposed Pad
Packaging: Cut Tape (CT)
auf Bestellung 4845 Stücke:
Lieferzeit 10-14 Tag (e)
Anzahl Preis
16+1.16 EUR
22+0.82 EUR
25+0.74 EUR
100+0.65 EUR
250+0.6 EUR
500+0.58 EUR
1000+0.55 EUR
Mindestbestellmenge: 16
Im Einkaufswagen  Stück im Wert von  UAH