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NVLJWS013N03CLTAG onsemi


nvljws013n03cl-d.pdf
Hersteller: onsemi
Description: T6 30V LL 2X2 WDFNW6
Qualification: AEC-Q101
Grade: Automotive
Input Capacitance (Ciss) (Max) @ Vds: 600 pF @ 15 V
Gate Charge (Qg) (Max) @ Vgs: 10 nC @ 10 V
Drain to Source Voltage (Vdss): 30 V
Vgs (Max): ±20V
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Part Status: Active
Supplier Device Package: 6-WDFNW (2.05x2.05)
Vgs(th) (Max) @ Id: 2V @ 250µA
Power Dissipation (Max): 2.4W (Ta), 27W (Tc)
Rds On (Max) @ Id, Vgs: 13mOhm @ 8A, 10V
Current - Continuous Drain (Id) @ 25°C: 10A (Ta), 35A (Tc)
FET Type: N-Channel
Technology: MOSFET (Metal Oxide)
Operating Temperature: -55°C ~ 175°C (TJ)
Mounting Type: Surface Mount, Wettable Flank
Package / Case: 6-PowerWDFN
Packaging: Tape & Reel (TR)
auf Bestellung 21000 Stücke:

Lieferzeit 10-14 Tag (e)
Anzahl Preis
3000+0.42 EUR
6000+0.41 EUR
15000+0.39 EUR
Mindestbestellmenge: 3000
Im Einkaufswagen  Stück im Wert von  UAH
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Technische Details NVLJWS013N03CLTAG onsemi

Description: T6 30V LL 2X2 WDFNW6, Qualification: AEC-Q101, Grade: Automotive, Input Capacitance (Ciss) (Max) @ Vds: 600 pF @ 15 V, Gate Charge (Qg) (Max) @ Vgs: 10 nC @ 10 V, Drain to Source Voltage (Vdss): 30 V, Vgs (Max): ±20V, Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V, Part Status: Active, Supplier Device Package: 6-WDFNW (2.05x2.05), Vgs(th) (Max) @ Id: 2V @ 250µA, Power Dissipation (Max): 2.4W (Ta), 27W (Tc), Rds On (Max) @ Id, Vgs: 13mOhm @ 8A, 10V, Current - Continuous Drain (Id) @ 25°C: 10A (Ta), 35A (Tc), FET Type: N-Channel, Technology: MOSFET (Metal Oxide), Operating Temperature: -55°C ~ 175°C (TJ), Mounting Type: Surface Mount, Wettable Flank, Package / Case: 6-PowerWDFN, Packaging: Tape & Reel (TR).

Weitere Produktangebote NVLJWS013N03CLTAG nach Preis ab 0.45 EUR bis 1.16 EUR

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NVLJWS013N03CLTAG onsemi nvljws013n03cl-d.pdf Description: T6 30V LL 2X2 WDFNW6
Packaging: Cut Tape (CT)
Package / Case: 6-PowerWDFN
Mounting Type: Surface Mount, Wettable Flank
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 10A (Ta), 35A (Tc)
Rds On (Max) @ Id, Vgs: 13mOhm @ 8A, 10V
Power Dissipation (Max): 2.4W (Ta), 27W (Tc)
Vgs(th) (Max) @ Id: 2V @ 250µA
Supplier Device Package: 6-WDFNW (2.05x2.05)
Grade: Automotive
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 30 V
Gate Charge (Qg) (Max) @ Vgs: 10 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 600 pF @ 15 V
Qualification: AEC-Q101
auf Bestellung 21000 Stücke:
Lieferzeit 10-14 Tag (e)
16+1.16 EUR
18+1.03 EUR
25+0.97 EUR
100+0.74 EUR
250+0.63 EUR
500+0.59 EUR
1000+0.45 EUR
Mindestbestellmenge: 16
Im Einkaufswagen  Stück im Wert von  UAH
NVLJWS013N03CLTAG nvljws013n03cl-d.pdf
Hersteller: onsemi
Description: T6 30V LL 2X2 WDFNW6
Packaging: Cut Tape (CT)
Package / Case: 6-PowerWDFN
Mounting Type: Surface Mount, Wettable Flank
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 10A (Ta), 35A (Tc)
Rds On (Max) @ Id, Vgs: 13mOhm @ 8A, 10V
Power Dissipation (Max): 2.4W (Ta), 27W (Tc)
Vgs(th) (Max) @ Id: 2V @ 250µA
Supplier Device Package: 6-WDFNW (2.05x2.05)
Grade: Automotive
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 30 V
Gate Charge (Qg) (Max) @ Vgs: 10 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 600 pF @ 15 V
Qualification: AEC-Q101
auf Bestellung 21000 Stücke:
Lieferzeit 10-14 Tag (e)
Anzahl Preis
16+1.16 EUR
18+1.03 EUR
25+0.97 EUR
100+0.74 EUR
250+0.63 EUR
500+0.59 EUR
1000+0.45 EUR
Mindestbestellmenge: 16
Im Einkaufswagen  Stück im Wert von  UAH