| Anzahl | Privatkunde |
|---|---|
| 2+ | 2.57 EUR |
| 10+ | 1.59 EUR |
| 100+ | 1.06 EUR |
| 500+ | 0.83 EUR |
| 1000+ | 0.7 EUR |
| 3000+ | 0.64 EUR |
| 6000+ | 0.57 EUR |
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Lieferzeit:
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2 Stücke
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Technische Details NVLJWS013N03CLTAG onsemi
Description: T6 30V LL 2X2 WDFNW6, Packaging: Tape & Reel (TR), Package / Case: 6-PowerWDFN, Mounting Type: Surface Mount, Wettable Flank, Operating Temperature: -55°C ~ 175°C (TJ), Technology: MOSFET (Metal Oxide), FET Type: N-Channel, Current - Continuous Drain (Id) @ 25°C: 10A (Ta), 35A (Tc), Rds On (Max) @ Id, Vgs: 13mOhm @ 8A, 10V, Power Dissipation (Max): 2.4W (Ta), 27W (Tc), Vgs(th) (Max) @ Id: 2V @ 250µA, Supplier Device Package: 6-WDFNW (2.05x2.05), Grade: Automotive, Part Status: Active, Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V, Vgs (Max): ±20V, Drain to Source Voltage (Vdss): 30 V, Gate Charge (Qg) (Max) @ Vgs: 10 nC @ 10 V, Input Capacitance (Ciss) (Max) @ Vds: 600 pF @ 15 V, Qualification: AEC-Q101.
Weitere Produktangebote NVLJWS013N03CLTAG nach Preis ab 0.46 EUR bis 1.38 EUR
| Foto | Bezeichnung | Hersteller | Beschreibung | Verfügbarkeit | Privatkunde | ||||||||||||||
|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|
| NVLJWS013N03CLTAG | onsemi |
 Description: T6 30V LL 2X2 WDFNW6Packaging: Tape & Reel (TR) Package / Case: 6-PowerWDFN Mounting Type: Surface Mount, Wettable Flank Operating Temperature: -55°C ~ 175°C (TJ) Technology: MOSFET (Metal Oxide) FET Type: N-Channel Current - Continuous Drain (Id) @ 25°C: 10A (Ta), 35A (Tc) Rds On (Max) @ Id, Vgs: 13mOhm @ 8A, 10V Power Dissipation (Max): 2.4W (Ta), 27W (Tc) Vgs(th) (Max) @ Id: 2V @ 250µA Supplier Device Package: 6-WDFNW (2.05x2.05) Grade: Automotive Part Status: Active Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V Vgs (Max): ±20V Drain to Source Voltage (Vdss): 30 V Gate Charge (Qg) (Max) @ Vgs: 10 nC @ 10 V Input Capacitance (Ciss) (Max) @ Vds: 600 pF @ 15 V Qualification: AEC-Q101 |
auf Bestellung 21000 Stücke: Lieferzeit 10-14 Tag (e) |
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| NVLJWS013N03CLTAG | onsemi |
Description: T6 30V LL 2X2 WDFNW6 Packaging: Cut Tape (CT) Package / Case: 6-PowerWDFN Mounting Type: Surface Mount, Wettable Flank Operating Temperature: -55°C ~ 175°C (TJ) Technology: MOSFET (Metal Oxide) FET Type: N-Channel Current - Continuous Drain (Id) @ 25°C: 10A (Ta), 35A (Tc) Rds On (Max) @ Id, Vgs: 13mOhm @ 8A, 10V Power Dissipation (Max): 2.4W (Ta), 27W (Tc) Vgs(th) (Max) @ Id: 2V @ 250µA Supplier Device Package: 6-WDFNW (2.05x2.05) Grade: Automotive Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V Vgs (Max): ±20V Drain to Source Voltage (Vdss): 30 V Gate Charge (Qg) (Max) @ Vgs: 10 nC @ 10 V Input Capacitance (Ciss) (Max) @ Vds: 600 pF @ 15 V Qualification: AEC-Q101 |
auf Bestellung 21000 Stücke: Lieferzeit 10-14 Tag (e) |
|
| NVLJWS013N03CLTAG |
|
Hersteller: onsemi
Description: T6 30V LL 2X2 WDFNW6
Packaging: Tape & Reel (TR)
Package / Case: 6-PowerWDFN
Mounting Type: Surface Mount, Wettable Flank
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 10A (Ta), 35A (Tc)
Rds On (Max) @ Id, Vgs: 13mOhm @ 8A, 10V
Power Dissipation (Max): 2.4W (Ta), 27W (Tc)
Vgs(th) (Max) @ Id: 2V @ 250µA
Supplier Device Package: 6-WDFNW (2.05x2.05)
Grade: Automotive
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 30 V
Gate Charge (Qg) (Max) @ Vgs: 10 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 600 pF @ 15 V
Qualification: AEC-Q101
Description: T6 30V LL 2X2 WDFNW6
Packaging: Tape & Reel (TR)
Package / Case: 6-PowerWDFN
Mounting Type: Surface Mount, Wettable Flank
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 10A (Ta), 35A (Tc)
Rds On (Max) @ Id, Vgs: 13mOhm @ 8A, 10V
Power Dissipation (Max): 2.4W (Ta), 27W (Tc)
Vgs(th) (Max) @ Id: 2V @ 250µA
Supplier Device Package: 6-WDFNW (2.05x2.05)
Grade: Automotive
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 30 V
Gate Charge (Qg) (Max) @ Vgs: 10 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 600 pF @ 15 V
Qualification: AEC-Q101
auf Bestellung 21000 Stücke:
Lieferzeit 10-14 Tag (e)
| Anzahl | Privatkunde |
|---|---|
| 3000+ | 0.5 EUR |
| 6000+ | 0.49 EUR |
| 15000+ | 0.46 EUR |
| NVLJWS013N03CLTAG |
|
Hersteller: onsemi
Description: T6 30V LL 2X2 WDFNW6
Packaging: Cut Tape (CT)
Package / Case: 6-PowerWDFN
Mounting Type: Surface Mount, Wettable Flank
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 10A (Ta), 35A (Tc)
Rds On (Max) @ Id, Vgs: 13mOhm @ 8A, 10V
Power Dissipation (Max): 2.4W (Ta), 27W (Tc)
Vgs(th) (Max) @ Id: 2V @ 250µA
Supplier Device Package: 6-WDFNW (2.05x2.05)
Grade: Automotive
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 30 V
Gate Charge (Qg) (Max) @ Vgs: 10 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 600 pF @ 15 V
Qualification: AEC-Q101
Description: T6 30V LL 2X2 WDFNW6
Packaging: Cut Tape (CT)
Package / Case: 6-PowerWDFN
Mounting Type: Surface Mount, Wettable Flank
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 10A (Ta), 35A (Tc)
Rds On (Max) @ Id, Vgs: 13mOhm @ 8A, 10V
Power Dissipation (Max): 2.4W (Ta), 27W (Tc)
Vgs(th) (Max) @ Id: 2V @ 250µA
Supplier Device Package: 6-WDFNW (2.05x2.05)
Grade: Automotive
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 30 V
Gate Charge (Qg) (Max) @ Vgs: 10 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 600 pF @ 15 V
Qualification: AEC-Q101
auf Bestellung 21000 Stücke:
Lieferzeit 10-14 Tag (e)
| Anzahl | Privatkunde |
|---|---|
| 16+ | 1.38 EUR |
| 18+ | 1.23 EUR |
| 25+ | 1.15 EUR |
| 100+ | 0.88 EUR |
| 250+ | 0.75 EUR |
| 500+ | 0.7 EUR |
| 1000+ | 0.54 EUR |