NVMD4N03R2G onsemi
Hersteller: onsemi
Description: MOSFET 2N-CH 30V 4A 8SOIC
Supplier Device Package: 8-SOIC
Vgs(th) (Max) @ Id: 3V @ 250µA
FET Feature: Logic Level Gate
Gate Charge (Qg) (Max) @ Vgs: 16nC @ 10V
Rds On (Max) @ Id, Vgs: 60mOhm @ 4A, 10V
Input Capacitance (Ciss) (Max) @ Vds: 400pF @ 20V
Current - Continuous Drain (Id) @ 25°C: 4A
Drain to Source Voltage (Vdss): 30V
Power - Max: 2W
Technology: MOSFET (Metal Oxide)
Operating Temperature: -55°C ~ 150°C (TJ)
Configuration: 2 N-Channel (Dual)
Mounting Type: Surface Mount
Package / Case: 8-SOIC (0.154", 3.90mm Width)
Packaging: Tape & Reel (TR)
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Technische Details NVMD4N03R2G onsemi
Description: MOSFET 2N-CH 30V 4A 8SOIC, Supplier Device Package: 8-SOIC, Vgs(th) (Max) @ Id: 3V @ 250µA, FET Feature: Logic Level Gate, Gate Charge (Qg) (Max) @ Vgs: 16nC @ 10V, Rds On (Max) @ Id, Vgs: 60mOhm @ 4A, 10V, Input Capacitance (Ciss) (Max) @ Vds: 400pF @ 20V, Current - Continuous Drain (Id) @ 25°C: 4A, Drain to Source Voltage (Vdss): 30V, Power - Max: 2W, Technology: MOSFET (Metal Oxide), Operating Temperature: -55°C ~ 150°C (TJ), Configuration: 2 N-Channel (Dual), Mounting Type: Surface Mount, Package / Case: 8-SOIC (0.154", 3.90mm Width), Packaging: Tape & Reel (TR).
Weitere Produktangebote NVMD4N03R2G nach Preis ab 0.77 EUR bis 2.41 EUR
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NVMD4N03R2G | onsemi |
Description: MOSFET 2N-CH 30V 4A 8SOIC Rds On (Max) @ Id, Vgs: 60mOhm @ 4A, 10V Input Capacitance (Ciss) (Max) @ Vds: 400pF @ 20V Current - Continuous Drain (Id) @ 25°C: 4A Drain to Source Voltage (Vdss): 30V Power - Max: 2W Technology: MOSFET (Metal Oxide) Operating Temperature: -55°C ~ 150°C (TJ) Configuration: 2 N-Channel (Dual) Mounting Type: Surface Mount Package / Case: 8-SOIC (0.154", 3.90mm Width) Packaging: Cut Tape (CT) Supplier Device Package: 8-SOIC Vgs(th) (Max) @ Id: 3V @ 250µA FET Feature: Logic Level Gate Gate Charge (Qg) (Max) @ Vgs: 16nC @ 10V |
auf Bestellung 2500 Stücke: Lieferzeit 10-14 Tag (e) |
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NVMD4N03R2G | onsemi |
MOSFETs Dual N-Channel Power MOSFET 30V, 4A, 60mohm NTMD4N03 Automotive version |
auf Bestellung 2480 Stücke: Lieferzeit 10-14 Tag (e) |
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| NVMD4N03R2G |
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Hersteller: onsemi
Description: MOSFET 2N-CH 30V 4A 8SOIC
Rds On (Max) @ Id, Vgs: 60mOhm @ 4A, 10V
Input Capacitance (Ciss) (Max) @ Vds: 400pF @ 20V
Current - Continuous Drain (Id) @ 25°C: 4A
Drain to Source Voltage (Vdss): 30V
Power - Max: 2W
Technology: MOSFET (Metal Oxide)
Operating Temperature: -55°C ~ 150°C (TJ)
Configuration: 2 N-Channel (Dual)
Mounting Type: Surface Mount
Package / Case: 8-SOIC (0.154", 3.90mm Width)
Packaging: Cut Tape (CT)
Supplier Device Package: 8-SOIC
Vgs(th) (Max) @ Id: 3V @ 250µA
FET Feature: Logic Level Gate
Gate Charge (Qg) (Max) @ Vgs: 16nC @ 10V
Description: MOSFET 2N-CH 30V 4A 8SOIC
Rds On (Max) @ Id, Vgs: 60mOhm @ 4A, 10V
Input Capacitance (Ciss) (Max) @ Vds: 400pF @ 20V
Current - Continuous Drain (Id) @ 25°C: 4A
Drain to Source Voltage (Vdss): 30V
Power - Max: 2W
Technology: MOSFET (Metal Oxide)
Operating Temperature: -55°C ~ 150°C (TJ)
Configuration: 2 N-Channel (Dual)
Mounting Type: Surface Mount
Package / Case: 8-SOIC (0.154", 3.90mm Width)
Packaging: Cut Tape (CT)
Supplier Device Package: 8-SOIC
Vgs(th) (Max) @ Id: 3V @ 250µA
FET Feature: Logic Level Gate
Gate Charge (Qg) (Max) @ Vgs: 16nC @ 10V
auf Bestellung 2500 Stücke:
Lieferzeit 10-14 Tag (e)
| Anzahl | Preis |
|---|---|
| 9+ | 2.16 EUR |
| 10+ | 1.78 EUR |
| 100+ | 1.39 EUR |
| 500+ | 1.17 EUR |
| 1000+ | 0.96 EUR |
| NVMD4N03R2G |
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Hersteller: onsemi
MOSFETs Dual N-Channel Power MOSFET 30V, 4A, 60mohm NTMD4N03 Automotive version
MOSFETs Dual N-Channel Power MOSFET 30V, 4A, 60mohm NTMD4N03 Automotive version
auf Bestellung 2480 Stücke:
Lieferzeit 10-14 Tag (e)
| Anzahl | Preis |
|---|---|
| 2+ | 2.41 EUR |
| 10+ | 1.69 EUR |
| 100+ | 1.2 EUR |
| 500+ | 0.98 EUR |
| 1000+ | 0.91 EUR |
| 2500+ | 0.81 EUR |
| 5000+ | 0.77 EUR |