Technische Details NVMFD5877NLT1G onsemi
Category: SMD N channel transistors, Description: Transistor: N-MOSFET; unipolar; 60V; 12A; 12W; DFN8; 5x6mm, Type of transistor: N-MOSFET, Polarisation: unipolar, Drain-source voltage: 60V, Drain current: 12A, Power dissipation: 12W, Case: DFN8, Gate-source voltage: ±20V, On-state resistance: 39mΩ, Mounting: SMD, Kind of package: reel; tape, Kind of channel: enhanced, Dimensions: 5x6mm, Anzahl je Verpackung: 3000 Stücke.
Weitere Produktangebote NVMFD5877NLT1G
| Foto | Bezeichnung | Hersteller | Beschreibung |
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NVMFD5877NLT1G | Hersteller : ON Semiconductor |
 Description: MOSFET 2N-CH 60V 6A 8SOIC |
auf Bestellung 1500 Stücke: Lieferzeit 10-14 Tag (e) |
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NVMFD5877NLT1G | Hersteller : ONSEMI |
Category: SMD N channel transistors Description: Transistor: N-MOSFET; unipolar; 60V; 12A; 12W; DFN8; 5x6mm Type of transistor: N-MOSFET Polarisation: unipolar Drain-source voltage: 60V Drain current: 12A Power dissipation: 12W Case: DFN8 Gate-source voltage: ±20V On-state resistance: 39mΩ Mounting: SMD Kind of package: reel; tape Kind of channel: enhanced Dimensions: 5x6mm Anzahl je Verpackung: 3000 Stücke |
Produkt ist nicht verfügbar |
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NVMFD5877NLT1G | Hersteller : ONSEMI |
Category: SMD N channel transistors Description: Transistor: N-MOSFET; unipolar; 60V; 12A; 12W; DFN8; 5x6mm Type of transistor: N-MOSFET Polarisation: unipolar Drain-source voltage: 60V Drain current: 12A Power dissipation: 12W Case: DFN8 Gate-source voltage: ±20V On-state resistance: 39mΩ Mounting: SMD Kind of package: reel; tape Kind of channel: enhanced Dimensions: 5x6mm |
Produkt ist nicht verfügbar |