auf Bestellung 1500 Stücke:
Lieferzeit 493-507 Tag (e)
Anzahl | Preis ohne MwSt |
---|---|
6+ | 10.09 EUR |
10+ | 9 EUR |
100+ | 7.36 EUR |
500+ | 6.32 EUR |
1000+ | 6.27 EUR |
1500+ | 5.3 EUR |
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Technische Details NVMFD5C446NT1G onsemi
Description: MOSFET 2N-CH 40V 24A/127A 8DFN, Packaging: Tape & Reel (TR), Package / Case: 8-PowerTDFN, Mounting Type: Surface Mount, Configuration: 2 N-Channel (Dual), Operating Temperature: -55°C ~ 175°C (TJ), Technology: MOSFET (Metal Oxide), Power - Max: 3.2W (Ta), 89W (Tc), Drain to Source Voltage (Vdss): 40V, Current - Continuous Drain (Id) @ 25°C: 24A (Ta), 127A (Tc), Input Capacitance (Ciss) (Max) @ Vds: 2450pF @ 25V, Rds On (Max) @ Id, Vgs: 2.9mOhm @ 30A, 10V, Gate Charge (Qg) (Max) @ Vgs: 38nC @ 10V, Vgs(th) (Max) @ Id: 3.5V @ 250µA, Supplier Device Package: 8-DFN (5x6) Dual Flag (SO8FL-Dual), Grade: Automotive, Qualification: AEC-Q101.
Weitere Produktangebote NVMFD5C446NT1G
Foto | Bezeichnung | Hersteller | Beschreibung |
Verfügbarkeit |
Preis ohne MwSt |
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NVMFD5C446NT1G | Hersteller : ON Semiconductor | MOSFET 40V 2.9 MOHM T8 SO-8FL DUAL DFN-8 |
auf Bestellung 1484 Stücke: Lieferzeit 14-28 Tag (e) |
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NVMFD5C446NT1G | Hersteller : onsemi |
Description: MOSFET 2N-CH 40V 24A/127A 8DFN Packaging: Tape & Reel (TR) Package / Case: 8-PowerTDFN Mounting Type: Surface Mount Configuration: 2 N-Channel (Dual) Operating Temperature: -55°C ~ 175°C (TJ) Technology: MOSFET (Metal Oxide) Power - Max: 3.2W (Ta), 89W (Tc) Drain to Source Voltage (Vdss): 40V Current - Continuous Drain (Id) @ 25°C: 24A (Ta), 127A (Tc) Input Capacitance (Ciss) (Max) @ Vds: 2450pF @ 25V Rds On (Max) @ Id, Vgs: 2.9mOhm @ 30A, 10V Gate Charge (Qg) (Max) @ Vgs: 38nC @ 10V Vgs(th) (Max) @ Id: 3.5V @ 250µA Supplier Device Package: 8-DFN (5x6) Dual Flag (SO8FL-Dual) Grade: Automotive Qualification: AEC-Q101 |
Produkt ist nicht verfügbar |
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NVMFD5C446NT1G | Hersteller : onsemi |
Description: MOSFET 2N-CH 40V 24A/127A 8DFN Packaging: Cut Tape (CT) Package / Case: 8-PowerTDFN Mounting Type: Surface Mount Configuration: 2 N-Channel (Dual) Operating Temperature: -55°C ~ 175°C (TJ) Technology: MOSFET (Metal Oxide) Power - Max: 3.2W (Ta), 89W (Tc) Drain to Source Voltage (Vdss): 40V Current - Continuous Drain (Id) @ 25°C: 24A (Ta), 127A (Tc) Input Capacitance (Ciss) (Max) @ Vds: 2450pF @ 25V Rds On (Max) @ Id, Vgs: 2.9mOhm @ 30A, 10V Gate Charge (Qg) (Max) @ Vgs: 38nC @ 10V Vgs(th) (Max) @ Id: 3.5V @ 250µA Supplier Device Package: 8-DFN (5x6) Dual Flag (SO8FL-Dual) Grade: Automotive Qualification: AEC-Q101 |
Produkt ist nicht verfügbar |