auf Bestellung 3000 Stücke:
Lieferzeit 14-28 Tag (e)
| Anzahl | Preis ohne MwSt |
|---|---|
| 12+ | 4.58 EUR |
| 14+ | 3.82 EUR |
| 100+ | 3.04 EUR |
| 250+ | 2.81 EUR |
| 500+ | 2.54 EUR |
| 1000+ | 2.17 EUR |
| 1500+ | 2.06 EUR |
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Technische Details NVMFD5C470NT1G onsemi
Description: MOSFET 2N-CH 40V 11.7A/36A 8DFN, Packaging: Tape & Reel (TR), Package / Case: 8-PowerTDFN, Mounting Type: Surface Mount, Configuration: 2 N-Channel (Dual), Operating Temperature: -55°C ~ 175°C (TJ), Technology: MOSFET (Metal Oxide), Power - Max: 3.1W (Ta), 28W (Tc), Drain to Source Voltage (Vdss): 40V, Current - Continuous Drain (Id) @ 25°C: 11.7A (Ta), 36A (Tc), Input Capacitance (Ciss) (Max) @ Vds: 420pF @ 25V, Rds On (Max) @ Id, Vgs: 11.7mOhm @ 10A, 10V, Gate Charge (Qg) (Max) @ Vgs: 8nC @ 10V, Vgs(th) (Max) @ Id: 3.5V @ 250µA, Supplier Device Package: 8-DFN (5x6) Dual Flag (SO8FL-Dual), Grade: Automotive, Qualification: AEC-Q101.
Weitere Produktangebote NVMFD5C470NT1G
| Foto | Bezeichnung | Hersteller | Beschreibung |
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| NVMFD5C470NT1G | Hersteller : ON Semiconductor |
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auf Bestellung 1470 Stücke: Lieferzeit 21-28 Tag (e) |
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NVMFD5C470NT1G | Hersteller : onsemi |
Description: MOSFET 2N-CH 40V 11.7A/36A 8DFN Packaging: Tape & Reel (TR) Package / Case: 8-PowerTDFN Mounting Type: Surface Mount Configuration: 2 N-Channel (Dual) Operating Temperature: -55°C ~ 175°C (TJ) Technology: MOSFET (Metal Oxide) Power - Max: 3.1W (Ta), 28W (Tc) Drain to Source Voltage (Vdss): 40V Current - Continuous Drain (Id) @ 25°C: 11.7A (Ta), 36A (Tc) Input Capacitance (Ciss) (Max) @ Vds: 420pF @ 25V Rds On (Max) @ Id, Vgs: 11.7mOhm @ 10A, 10V Gate Charge (Qg) (Max) @ Vgs: 8nC @ 10V Vgs(th) (Max) @ Id: 3.5V @ 250µA Supplier Device Package: 8-DFN (5x6) Dual Flag (SO8FL-Dual) Grade: Automotive Qualification: AEC-Q101 |
Produkt ist nicht verfügbar |
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NVMFD5C470NT1G | Hersteller : onsemi |
Description: MOSFET 2N-CH 40V 11.7A/36A 8DFN Packaging: Cut Tape (CT) Package / Case: 8-PowerTDFN Mounting Type: Surface Mount Configuration: 2 N-Channel (Dual) Operating Temperature: -55°C ~ 175°C (TJ) Technology: MOSFET (Metal Oxide) Power - Max: 3.1W (Ta), 28W (Tc) Drain to Source Voltage (Vdss): 40V Current - Continuous Drain (Id) @ 25°C: 11.7A (Ta), 36A (Tc) Input Capacitance (Ciss) (Max) @ Vds: 420pF @ 25V Rds On (Max) @ Id, Vgs: 11.7mOhm @ 10A, 10V Gate Charge (Qg) (Max) @ Vgs: 8nC @ 10V Vgs(th) (Max) @ Id: 3.5V @ 250µA Supplier Device Package: 8-DFN (5x6) Dual Flag (SO8FL-Dual) Grade: Automotive Qualification: AEC-Q101 |
Produkt ist nicht verfügbar |