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NVMFD5C470NWFT1G

NVMFD5C470NWFT1G onsemi

NVMFD5C470N_D-2319405.pdf Hersteller: onsemi
MOSFETs 40V 11.7 MOHM T8 SO-8FL DUAL DFN-8
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1+3.31 EUR
10+2.43 EUR
100+1.75 EUR
250+1.72 EUR
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1000+1.35 EUR
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Technische Details NVMFD5C470NWFT1G onsemi

Description: MOSFET 2N-CH 40V 11.7A/36A 8DFN, Packaging: Tape & Reel (TR), Package / Case: 8-PowerTDFN, Mounting Type: Surface Mount, Configuration: 2 N-Channel (Dual), Operating Temperature: -55°C ~ 175°C (TJ), Technology: MOSFET (Metal Oxide), Power - Max: 3.1W (Ta), 28W (Tc), Drain to Source Voltage (Vdss): 40V, Current - Continuous Drain (Id) @ 25°C: 11.7A (Ta), 36A (Tc), Input Capacitance (Ciss) (Max) @ Vds: 420pF @ 25V, Rds On (Max) @ Id, Vgs: 11.7mOhm @ 10A, 10V, Gate Charge (Qg) (Max) @ Vgs: 8nC @ 10V, Vgs(th) (Max) @ Id: 3.5V @ 250µA, Supplier Device Package: 8-DFN (5x6) Dual Flag (SO8FL-Dual), Grade: Automotive, Qualification: AEC-Q101.

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NVMFD5C470NWFT1G NVMFD5C470NWFT1G Hersteller : onsemi nvmfd5c470n-d.pdf Description: MOSFET 2N-CH 40V 11.7A/36A 8DFN
Packaging: Cut Tape (CT)
Package / Case: 8-PowerTDFN
Mounting Type: Surface Mount
Configuration: 2 N-Channel (Dual)
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: MOSFET (Metal Oxide)
Power - Max: 3.1W (Ta), 28W (Tc)
Drain to Source Voltage (Vdss): 40V
Current - Continuous Drain (Id) @ 25°C: 11.7A (Ta), 36A (Tc)
Input Capacitance (Ciss) (Max) @ Vds: 420pF @ 25V
Rds On (Max) @ Id, Vgs: 11.7mOhm @ 10A, 10V
Gate Charge (Qg) (Max) @ Vgs: 8nC @ 10V
Vgs(th) (Max) @ Id: 3.5V @ 250µA
Supplier Device Package: 8-DFN (5x6) Dual Flag (SO8FL-Dual)
Grade: Automotive
Qualification: AEC-Q101
auf Bestellung 1090 Stücke:
Lieferzeit 10-14 Tag (e)
Anzahl Preis
5+3.85 EUR
10+2.48 EUR
100+1.70 EUR
500+1.36 EUR
Mindestbestellmenge: 5
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NVMFD5C470NWFT1G NVMFD5C470NWFT1G Hersteller : ON Semiconductor nvmfd5c470n-d.pdf Trans MOSFET N-CH 40V 11.7A Automotive 8-Pin DFN EP T/R
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NVMFD5C470NWFT1G Hersteller : ONSEMI nvmfd5c470n-d.pdf NVMFD5C470NWFT1G SMD N channel transistors
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NVMFD5C470NWFT1G NVMFD5C470NWFT1G Hersteller : onsemi nvmfd5c470n-d.pdf Description: MOSFET 2N-CH 40V 11.7A/36A 8DFN
Packaging: Tape & Reel (TR)
Package / Case: 8-PowerTDFN
Mounting Type: Surface Mount
Configuration: 2 N-Channel (Dual)
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: MOSFET (Metal Oxide)
Power - Max: 3.1W (Ta), 28W (Tc)
Drain to Source Voltage (Vdss): 40V
Current - Continuous Drain (Id) @ 25°C: 11.7A (Ta), 36A (Tc)
Input Capacitance (Ciss) (Max) @ Vds: 420pF @ 25V
Rds On (Max) @ Id, Vgs: 11.7mOhm @ 10A, 10V
Gate Charge (Qg) (Max) @ Vgs: 8nC @ 10V
Vgs(th) (Max) @ Id: 3.5V @ 250µA
Supplier Device Package: 8-DFN (5x6) Dual Flag (SO8FL-Dual)
Grade: Automotive
Qualification: AEC-Q101
Produkt ist nicht verfügbar
Im Einkaufswagen  Stück im Wert von  UAH