| Anzahl | Preis |
|---|---|
| 1+ | 4.59 EUR |
| 10+ | 4.14 EUR |
| 100+ | 3.33 EUR |
| 500+ | 2.73 EUR |
| 1000+ | 2.27 EUR |
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Technische Details NVMFD6H840NLWFT1G onsemi
Description: MOSFET 2N-CH 80V 14A 8DFN, Qualification: AEC-Q101, Grade: Automotive, Supplier Device Package: 8-DFN (5x6) Dual Flag (SO8FL-Dual), Vgs(th) (Max) @ Id: 2V @ 96µA, Gate Charge (Qg) (Max) @ Vgs: 32nC @ 10V, Rds On (Max) @ Id, Vgs: 6.9mOhm @ 20A, 10V, Input Capacitance (Ciss) (Max) @ Vds: 2002pF @ 40V, Current - Continuous Drain (Id) @ 25°C: 14A (Ta), 74A (Tc), Drain to Source Voltage (Vdss): 80V, Technology: MOSFET (Metal Oxide), Operating Temperature: -55°C ~ 175°C (TJ), Configuration: 2 N-Channel (Dual), Mounting Type: Surface Mount, Package / Case: 8-PowerTDFN, Packaging: Tape & Reel (TR).
Weitere Produktangebote NVMFD6H840NLWFT1G nach Preis ab 2.06 EUR bis 5.24 EUR
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NVMFD6H840NLWFT1G | onsemi |
 Description: MOSFET 2N-CH 80V 14A 8DFNQualification: AEC-Q101 Grade: Automotive Supplier Device Package: 8-DFN (5x6) Dual Flag (SO8FL-Dual) Vgs(th) (Max) @ Id: 2V @ 96µA Gate Charge (Qg) (Max) @ Vgs: 32nC @ 10V Rds On (Max) @ Id, Vgs: 6.9mOhm @ 20A, 10V Input Capacitance (Ciss) (Max) @ Vds: 2002pF @ 40V Current - Continuous Drain (Id) @ 25°C: 14A (Ta), 74A (Tc) Drain to Source Voltage (Vdss): 80V Technology: MOSFET (Metal Oxide) Operating Temperature: -55°C ~ 175°C (TJ) Configuration: 2 N-Channel (Dual) Mounting Type: Surface Mount Package / Case: 8-PowerTDFN Packaging: Cut Tape (CT) |
auf Bestellung 837 Stücke: Lieferzeit 10-14 Tag (e) |
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| NVMFD6H840NLWFT1G | ON Semiconductor |
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auf Bestellung 2950 Stücke: Lieferzeit 21-28 Tag (e) |
Im Einkaufswagen Stück im Wert von UAH |
| NVMFD6H840NLWFT1G |
|
Hersteller: onsemi
Description: MOSFET 2N-CH 80V 14A 8DFN
Qualification: AEC-Q101
Grade: Automotive
Supplier Device Package: 8-DFN (5x6) Dual Flag (SO8FL-Dual)
Vgs(th) (Max) @ Id: 2V @ 96µA
Gate Charge (Qg) (Max) @ Vgs: 32nC @ 10V
Rds On (Max) @ Id, Vgs: 6.9mOhm @ 20A, 10V
Input Capacitance (Ciss) (Max) @ Vds: 2002pF @ 40V
Current - Continuous Drain (Id) @ 25°C: 14A (Ta), 74A (Tc)
Drain to Source Voltage (Vdss): 80V
Technology: MOSFET (Metal Oxide)
Operating Temperature: -55°C ~ 175°C (TJ)
Configuration: 2 N-Channel (Dual)
Mounting Type: Surface Mount
Package / Case: 8-PowerTDFN
Packaging: Cut Tape (CT)
Description: MOSFET 2N-CH 80V 14A 8DFN
Qualification: AEC-Q101
Grade: Automotive
Supplier Device Package: 8-DFN (5x6) Dual Flag (SO8FL-Dual)
Vgs(th) (Max) @ Id: 2V @ 96µA
Gate Charge (Qg) (Max) @ Vgs: 32nC @ 10V
Rds On (Max) @ Id, Vgs: 6.9mOhm @ 20A, 10V
Input Capacitance (Ciss) (Max) @ Vds: 2002pF @ 40V
Current - Continuous Drain (Id) @ 25°C: 14A (Ta), 74A (Tc)
Drain to Source Voltage (Vdss): 80V
Technology: MOSFET (Metal Oxide)
Operating Temperature: -55°C ~ 175°C (TJ)
Configuration: 2 N-Channel (Dual)
Mounting Type: Surface Mount
Package / Case: 8-PowerTDFN
Packaging: Cut Tape (CT)
auf Bestellung 837 Stücke:
Lieferzeit 10-14 Tag (e)| Anzahl | Preis |
|---|---|
| 4+ | 5.24 EUR |
| 10+ | 3.42 EUR |
| 100+ | 2.39 EUR |
| 500+ | 2.06 EUR |
| NVMFD6H840NLWFT1G |
|
Hersteller: ON Semiconductor
auf Bestellung 2950 Stücke:
Lieferzeit 21-28 Tag (e)Im Einkaufswagen Stück im Wert von UAH