
NVMFS014P04M8LT1G onsemi

Description: MV8 40V P-CH LL IN S08FL PACKAGE
Packaging: Tape & Reel (TR)
Package / Case: 8-PowerTDFN, 5 Leads
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: P-Channel
Current - Continuous Drain (Id) @ 25°C: 12.5A (Ta), 52.1A (Tc)
Rds On (Max) @ Id, Vgs: 13.8mOhm @ 15A, 10V
Power Dissipation (Max): 3.6W (Ta), 60W (Tc)
Vgs(th) (Max) @ Id: 2.4V @ 420µA
Supplier Device Package: 5-DFN (5x6) (8-SOFL)
Grade: Automotive
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 40 V
Gate Charge (Qg) (Max) @ Vgs: 26.5 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 1734 pF @ 20 V
Qualification: AEC-Q101
auf Bestellung 34500 Stücke:
Lieferzeit 10-14 Tag (e)
Anzahl | Preis |
---|---|
1500+ | 0.70 EUR |
3000+ | 0.65 EUR |
4500+ | 0.63 EUR |
7500+ | 0.62 EUR |
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Technische Details NVMFS014P04M8LT1G onsemi
Description: MV8 40V P-CH LL IN S08FL PACKAGE, Packaging: Tape & Reel (TR), Package / Case: 8-PowerTDFN, 5 Leads, Mounting Type: Surface Mount, Operating Temperature: -55°C ~ 175°C (TJ), Technology: MOSFET (Metal Oxide), FET Type: P-Channel, Current - Continuous Drain (Id) @ 25°C: 12.5A (Ta), 52.1A (Tc), Rds On (Max) @ Id, Vgs: 13.8mOhm @ 15A, 10V, Power Dissipation (Max): 3.6W (Ta), 60W (Tc), Vgs(th) (Max) @ Id: 2.4V @ 420µA, Supplier Device Package: 5-DFN (5x6) (8-SOFL), Grade: Automotive, Part Status: Active, Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V, Vgs (Max): ±20V, Drain to Source Voltage (Vdss): 40 V, Gate Charge (Qg) (Max) @ Vgs: 26.5 nC @ 10 V, Input Capacitance (Ciss) (Max) @ Vds: 1734 pF @ 20 V, Qualification: AEC-Q101.
Weitere Produktangebote NVMFS014P04M8LT1G nach Preis ab 0.68 EUR bis 2.29 EUR
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NVMFS014P04M8LT1G | Hersteller : onsemi |
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auf Bestellung 9111 Stücke: Lieferzeit 10-14 Tag (e) |
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NVMFS014P04M8LT1G | Hersteller : onsemi |
![]() Packaging: Cut Tape (CT) Package / Case: 8-PowerTDFN, 5 Leads Mounting Type: Surface Mount Operating Temperature: -55°C ~ 175°C (TJ) Technology: MOSFET (Metal Oxide) FET Type: P-Channel Current - Continuous Drain (Id) @ 25°C: 12.5A (Ta), 52.1A (Tc) Rds On (Max) @ Id, Vgs: 13.8mOhm @ 15A, 10V Power Dissipation (Max): 3.6W (Ta), 60W (Tc) Vgs(th) (Max) @ Id: 2.4V @ 420µA Supplier Device Package: 5-DFN (5x6) (8-SOFL) Grade: Automotive Part Status: Active Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V Vgs (Max): ±20V Drain to Source Voltage (Vdss): 40 V Gate Charge (Qg) (Max) @ Vgs: 26.5 nC @ 10 V Input Capacitance (Ciss) (Max) @ Vds: 1734 pF @ 20 V Qualification: AEC-Q101 |
auf Bestellung 35605 Stücke: Lieferzeit 10-14 Tag (e) |
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NVMFS014P04M8LT1G | Hersteller : ON Semiconductor |
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NVMFS014P04M8LT1G | Hersteller : ON Semiconductor |
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Produkt ist nicht verfügbar |
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NVMFS014P04M8LT1G | Hersteller : ONSEMI |
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Produkt ist nicht verfügbar |