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NVMFS021N10MCLT1G

NVMFS021N10MCLT1G onsemi

nvmfs021n10mcl-d.pdf Hersteller: onsemi
Description: PTNG 100V LL SO8FL
Packaging: Tape & Reel (TR)
Package / Case: 8-PowerTDFN, 5 Leads
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 8.4A (Ta), 31A (Tc)
Rds On (Max) @ Id, Vgs: 23mOhm @ 7A, 10V
Power Dissipation (Max): 3.6W (Ta), 49W (Tc)
Vgs(th) (Max) @ Id: 3V @ 42µA
Supplier Device Package: 5-DFN (5x6) (8-SOFL)
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 100 V
Gate Charge (Qg) (Max) @ Vgs: 13 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 850 pF @ 50 V
Grade: Automotive
Qualification: AEC-Q101
auf Bestellung 30000 Stücke:
Lieferzeit 10-14 Tag (e)
Anzahl Preis
1500+0.45 EUR
3000+0.43 EUR
7500+0.42 EUR
Mindestbestellmenge: 1500
Im Einkaufswagen  Stück im Wert von  UAH
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Technische Details NVMFS021N10MCLT1G onsemi

Description: PTNG 100V LL SO8FL, Packaging: Tape & Reel (TR), Package / Case: 8-PowerTDFN, 5 Leads, Mounting Type: Surface Mount, Operating Temperature: -55°C ~ 175°C (TJ), Technology: MOSFET (Metal Oxide), FET Type: N-Channel, Current - Continuous Drain (Id) @ 25°C: 8.4A (Ta), 31A (Tc), Rds On (Max) @ Id, Vgs: 23mOhm @ 7A, 10V, Power Dissipation (Max): 3.6W (Ta), 49W (Tc), Vgs(th) (Max) @ Id: 3V @ 42µA, Supplier Device Package: 5-DFN (5x6) (8-SOFL), Part Status: Active, Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V, Vgs (Max): ±20V, Drain to Source Voltage (Vdss): 100 V, Gate Charge (Qg) (Max) @ Vgs: 13 nC @ 10 V, Input Capacitance (Ciss) (Max) @ Vds: 850 pF @ 50 V, Grade: Automotive, Qualification: AEC-Q101.

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NVMFS021N10MCLT1G NVMFS021N10MCLT1G Hersteller : onsemi nvmfs021n10mcl-d.pdf MOSFETs Single N-Channel Power MOSFET 100 V, 31 A, 23 mohm
auf Bestellung 4820 Stücke:
Lieferzeit 10-14 Tag (e)
Anzahl Preis
2+1.71 EUR
10+1.19 EUR
100+0.8 EUR
500+0.63 EUR
1000+0.45 EUR
Mindestbestellmenge: 2
Im Einkaufswagen  Stück im Wert von  UAH
NVMFS021N10MCLT1G NVMFS021N10MCLT1G Hersteller : onsemi nvmfs021n10mcl-d.pdf Description: PTNG 100V LL SO8FL
Packaging: Cut Tape (CT)
Package / Case: 8-PowerTDFN, 5 Leads
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 8.4A (Ta), 31A (Tc)
Rds On (Max) @ Id, Vgs: 23mOhm @ 7A, 10V
Power Dissipation (Max): 3.6W (Ta), 49W (Tc)
Vgs(th) (Max) @ Id: 3V @ 42µA
Supplier Device Package: 5-DFN (5x6) (8-SOFL)
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 100 V
Gate Charge (Qg) (Max) @ Vgs: 13 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 850 pF @ 50 V
Grade: Automotive
Qualification: AEC-Q101
auf Bestellung 30649 Stücke:
Lieferzeit 10-14 Tag (e)
Anzahl Preis
11+1.71 EUR
15+1.2 EUR
100+0.79 EUR
500+0.62 EUR
Mindestbestellmenge: 11
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NVMFS021N10MCLT1G Hersteller : ONSEMI nvmfs021n10mcl-d.pdf NVMFS021N10MCLT1G SMD N channel transistors
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