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NVMFS021N10MCLT1G

NVMFS021N10MCLT1G onsemi

1B5914631BD8716966480BE6B8CB8B06B36B40E46EA4C7DA864B58F4AB0A1820.pdf
Hersteller: onsemi
MOSFETs Single N-Channel Power MOSFET 100 V, 31 A, 23 mohm
auf Bestellung 4452 Stücke:
Lieferzeit 10-14 Tag (e)
AnzahlPrivatkunde
2+2.07 EUR
10+1.42 EUR
100+0.95 EUR
500+0.75 EUR
1000+0.71 EUR
1500+0.54 EUR
Mindestbestellmenge: 2 Stücke
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Technische Details NVMFS021N10MCLT1G onsemi

Description: PTNG 100V LL SO8FL, Input Capacitance (Ciss) (Max) @ Vds: 850 pF @ 50 V, Gate Charge (Qg) (Max) @ Vgs: 13 nC @ 10 V, Drain to Source Voltage (Vdss): 100 V, Part Status: Active, Supplier Device Package: 5-DFN (5x6) (8-SOFL), Vgs(th) (Max) @ Id: 3V @ 42µA, Power Dissipation (Max): 3.6W (Ta), 49W (Tc), Rds On (Max) @ Id, Vgs: 23mOhm @ 7A, 10V, Current - Continuous Drain (Id) @ 25°C: 8.4A (Ta), 31A (Tc), FET Type: N-Channel, Technology: MOSFET (Metal Oxide), Operating Temperature: -55°C ~ 175°C (TJ), Mounting Type: Surface Mount, Package / Case: 8-PowerTDFN, 5 Leads, Packaging: Tape & Reel (TR), Vgs (Max): ±20V, Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V, Qualification: AEC-Q101, Grade: Automotive.

Weitere Produktangebote NVMFS021N10MCLT1G nach Preis ab 0.84 EUR bis 2.59 EUR

Foto Bezeichnung Hersteller Beschreibung Verfügbarkeit Privatkunde
NVMFS021N10MCLT1G NVMFS021N10MCLT1G onsemi nvmfs021n10mcl-d.pdf Description: PTNG 100V LL SO8FL
Input Capacitance (Ciss) (Max) @ Vds: 850 pF @ 50 V
Gate Charge (Qg) (Max) @ Vgs: 13 nC @ 10 V
Drain to Source Voltage (Vdss): 100 V
Vgs (Max): ±20V
Supplier Device Package: 5-DFN (5x6) (8-SOFL)
Vgs(th) (Max) @ Id: 3V @ 42µA
Power Dissipation (Max): 3.6W (Ta), 49W (Tc)
Rds On (Max) @ Id, Vgs: 23mOhm @ 7A, 10V
Current - Continuous Drain (Id) @ 25°C: 8.4A (Ta), 31A (Tc)
FET Type: N-Channel
Technology: MOSFET (Metal Oxide)
Operating Temperature: -55°C ~ 175°C (TJ)
Mounting Type: Surface Mount
Package / Case: 8-PowerTDFN, 5 Leads
Packaging: Cut Tape (CT)
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Part Status: Active
Qualification: AEC-Q101
Grade: Automotive
auf Bestellung 1286 Stücke:
Lieferzeit 10-14 Tag (e)
9+2.59 EUR
13+1.64 EUR
50+1.23 EUR
100+1.08 EUR
500+0.84 EUR
Mindestbestellmenge: 9 Stücke
Im Einkaufswagen  Stück im Wert von  UAH
NVMFS021N10MCLT1G NVMFS021N10MCLT1G onsemi nvmfs021n10mcl-d.pdf Description: PTNG 100V LL SO8FL
Input Capacitance (Ciss) (Max) @ Vds: 850 pF @ 50 V
Gate Charge (Qg) (Max) @ Vgs: 13 nC @ 10 V
Drain to Source Voltage (Vdss): 100 V
Part Status: Active
Supplier Device Package: 5-DFN (5x6) (8-SOFL)
Vgs(th) (Max) @ Id: 3V @ 42µA
Power Dissipation (Max): 3.6W (Ta), 49W (Tc)
Rds On (Max) @ Id, Vgs: 23mOhm @ 7A, 10V
Current - Continuous Drain (Id) @ 25°C: 8.4A (Ta), 31A (Tc)
FET Type: N-Channel
Technology: MOSFET (Metal Oxide)
Operating Temperature: -55°C ~ 175°C (TJ)
Mounting Type: Surface Mount
Package / Case: 8-PowerTDFN, 5 Leads
Packaging: Tape & Reel (TR)
Vgs (Max): ±20V
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Qualification: AEC-Q101
Grade: Automotive
auf Bestellung 680 Stücke:
Lieferzeit 10-14 Tag (e)
 Mindestbestellmenge: 680 Stücke
Im Einkaufswagen  Stück im Wert von  UAH
NVMFS021N10MCLT1G ONN nvmfs021n10mcl-d.pdf
auf Bestellung 3000 Stücke:
Lieferzeit 21-28 Tag (e)
Im Einkaufswagen  Stück im Wert von  UAH
NVMFS021N10MCLT1G nvmfs021n10mcl-d.pdf
NVMFS021N10MCLT1G
Hersteller: onsemi
Description: PTNG 100V LL SO8FL
Input Capacitance (Ciss) (Max) @ Vds: 850 pF @ 50 V
Gate Charge (Qg) (Max) @ Vgs: 13 nC @ 10 V
Drain to Source Voltage (Vdss): 100 V
Vgs (Max): ±20V
Supplier Device Package: 5-DFN (5x6) (8-SOFL)
Vgs(th) (Max) @ Id: 3V @ 42µA
Power Dissipation (Max): 3.6W (Ta), 49W (Tc)
Rds On (Max) @ Id, Vgs: 23mOhm @ 7A, 10V
Current - Continuous Drain (Id) @ 25°C: 8.4A (Ta), 31A (Tc)
FET Type: N-Channel
Technology: MOSFET (Metal Oxide)
Operating Temperature: -55°C ~ 175°C (TJ)
Mounting Type: Surface Mount
Package / Case: 8-PowerTDFN, 5 Leads
Packaging: Cut Tape (CT)
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Part Status: Active
Qualification: AEC-Q101
Grade: Automotive
auf Bestellung 1286 Stücke:
Lieferzeit 10-14 Tag (e)
AnzahlPrivatkunde
9+2.59 EUR
13+1.64 EUR
50+1.23 EUR
100+1.08 EUR
500+0.84 EUR
Mindestbestellmenge: 9 Stücke
Im Einkaufswagen  Stück im Wert von  UAH
NVMFS021N10MCLT1G nvmfs021n10mcl-d.pdf
NVMFS021N10MCLT1G
Hersteller: onsemi
Description: PTNG 100V LL SO8FL
Input Capacitance (Ciss) (Max) @ Vds: 850 pF @ 50 V
Gate Charge (Qg) (Max) @ Vgs: 13 nC @ 10 V
Drain to Source Voltage (Vdss): 100 V
Part Status: Active
Supplier Device Package: 5-DFN (5x6) (8-SOFL)
Vgs(th) (Max) @ Id: 3V @ 42µA
Power Dissipation (Max): 3.6W (Ta), 49W (Tc)
Rds On (Max) @ Id, Vgs: 23mOhm @ 7A, 10V
Current - Continuous Drain (Id) @ 25°C: 8.4A (Ta), 31A (Tc)
FET Type: N-Channel
Technology: MOSFET (Metal Oxide)
Operating Temperature: -55°C ~ 175°C (TJ)
Mounting Type: Surface Mount
Package / Case: 8-PowerTDFN, 5 Leads
Packaging: Tape & Reel (TR)
Vgs (Max): ±20V
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Qualification: AEC-Q101
Grade: Automotive
auf Bestellung 680 Stücke:
Lieferzeit 10-14 Tag (e)
Mindestbestellmenge: 680 Stücke
Im Einkaufswagen  Stück im Wert von  UAH
NVMFS021N10MCLT1G nvmfs021n10mcl-d.pdf
Hersteller: ONN
auf Bestellung 3000 Stücke:
Lieferzeit 21-28 Tag (e)
Im Einkaufswagen  Stück im Wert von  UAH