NVMFS021N10MCLT1G onsemi
Hersteller: onsemi
Description: PTNG 100V LL SO8FL
Input Capacitance (Ciss) (Max) @ Vds: 850 pF @ 50 V
Gate Charge (Qg) (Max) @ Vgs: 13 nC @ 10 V
Drain to Source Voltage (Vdss): 100 V
Part Status: Active
Supplier Device Package: 5-DFN (5x6) (8-SOFL)
Vgs(th) (Max) @ Id: 3V @ 42µA
Power Dissipation (Max): 3.6W (Ta), 49W (Tc)
Rds On (Max) @ Id, Vgs: 23mOhm @ 7A, 10V
Current - Continuous Drain (Id) @ 25°C: 8.4A (Ta), 31A (Tc)
FET Type: N-Channel
Technology: MOSFET (Metal Oxide)
Operating Temperature: -55°C ~ 175°C (TJ)
Mounting Type: Surface Mount
Package / Case: 8-PowerTDFN, 5 Leads
Packaging: Tape & Reel (TR)
Vgs (Max): ±20V
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Qualification: AEC-Q101
Grade: Automotive
| Anzahl | Preis |
|---|---|
| 1500+ | 0.45 EUR |
| 3000+ | 0.43 EUR |
| 7500+ | 0.42 EUR |
Produktrezensionen
Produktbewertung abgeben
Technische Details NVMFS021N10MCLT1G onsemi
Description: PTNG 100V LL SO8FL, Input Capacitance (Ciss) (Max) @ Vds: 850 pF @ 50 V, Gate Charge (Qg) (Max) @ Vgs: 13 nC @ 10 V, Drain to Source Voltage (Vdss): 100 V, Part Status: Active, Supplier Device Package: 5-DFN (5x6) (8-SOFL), Vgs(th) (Max) @ Id: 3V @ 42µA, Power Dissipation (Max): 3.6W (Ta), 49W (Tc), Rds On (Max) @ Id, Vgs: 23mOhm @ 7A, 10V, Current - Continuous Drain (Id) @ 25°C: 8.4A (Ta), 31A (Tc), FET Type: N-Channel, Technology: MOSFET (Metal Oxide), Operating Temperature: -55°C ~ 175°C (TJ), Mounting Type: Surface Mount, Package / Case: 8-PowerTDFN, 5 Leads, Packaging: Tape & Reel (TR), Vgs (Max): ±20V, Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V, Qualification: AEC-Q101, Grade: Automotive.
Weitere Produktangebote NVMFS021N10MCLT1G nach Preis ab 0.45 EUR bis 1.74 EUR
| Foto | Bezeichnung | Hersteller | Beschreibung |
Verfügbarkeit |
Preis |
||||||||||||
|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|
|
|
NVMFS021N10MCLT1G | onsemi |
Description: PTNG 100V LL SO8FL Input Capacitance (Ciss) (Max) @ Vds: 850 pF @ 50 V Gate Charge (Qg) (Max) @ Vgs: 13 nC @ 10 V Drain to Source Voltage (Vdss): 100 V Vgs (Max): ±20V Supplier Device Package: 5-DFN (5x6) (8-SOFL) Vgs(th) (Max) @ Id: 3V @ 42µA Power Dissipation (Max): 3.6W (Ta), 49W (Tc) Rds On (Max) @ Id, Vgs: 23mOhm @ 7A, 10V Current - Continuous Drain (Id) @ 25°C: 8.4A (Ta), 31A (Tc) FET Type: N-Channel Technology: MOSFET (Metal Oxide) Operating Temperature: -55°C ~ 175°C (TJ) Mounting Type: Surface Mount Package / Case: 8-PowerTDFN, 5 Leads Packaging: Cut Tape (CT) Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V Part Status: Active Qualification: AEC-Q101 Grade: Automotive |
auf Bestellung 30649 Stücke: Lieferzeit 10-14 Tag (e) |
|
||||||||||||
 |
NVMFS021N10MCLT1G | onsemi |
MOSFETs Single N-Channel Power MOSFET 100 V, 31 A, 23 mohm |
auf Bestellung 4452 Stücke: Lieferzeit 10-14 Tag (e) |
|
||||||||||||
| NVMFS021N10MCLT1G | ONN |
|
auf Bestellung 3000 Stücke: Lieferzeit 21-28 Tag (e) |
Im Einkaufswagen Stück im Wert von UAH |
| NVMFS021N10MCLT1G |
|
Hersteller: onsemi
Description: PTNG 100V LL SO8FL
Input Capacitance (Ciss) (Max) @ Vds: 850 pF @ 50 V
Gate Charge (Qg) (Max) @ Vgs: 13 nC @ 10 V
Drain to Source Voltage (Vdss): 100 V
Vgs (Max): ±20V
Supplier Device Package: 5-DFN (5x6) (8-SOFL)
Vgs(th) (Max) @ Id: 3V @ 42µA
Power Dissipation (Max): 3.6W (Ta), 49W (Tc)
Rds On (Max) @ Id, Vgs: 23mOhm @ 7A, 10V
Current - Continuous Drain (Id) @ 25°C: 8.4A (Ta), 31A (Tc)
FET Type: N-Channel
Technology: MOSFET (Metal Oxide)
Operating Temperature: -55°C ~ 175°C (TJ)
Mounting Type: Surface Mount
Package / Case: 8-PowerTDFN, 5 Leads
Packaging: Cut Tape (CT)
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Part Status: Active
Qualification: AEC-Q101
Grade: Automotive
Description: PTNG 100V LL SO8FL
Input Capacitance (Ciss) (Max) @ Vds: 850 pF @ 50 V
Gate Charge (Qg) (Max) @ Vgs: 13 nC @ 10 V
Drain to Source Voltage (Vdss): 100 V
Vgs (Max): ±20V
Supplier Device Package: 5-DFN (5x6) (8-SOFL)
Vgs(th) (Max) @ Id: 3V @ 42µA
Power Dissipation (Max): 3.6W (Ta), 49W (Tc)
Rds On (Max) @ Id, Vgs: 23mOhm @ 7A, 10V
Current - Continuous Drain (Id) @ 25°C: 8.4A (Ta), 31A (Tc)
FET Type: N-Channel
Technology: MOSFET (Metal Oxide)
Operating Temperature: -55°C ~ 175°C (TJ)
Mounting Type: Surface Mount
Package / Case: 8-PowerTDFN, 5 Leads
Packaging: Cut Tape (CT)
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Part Status: Active
Qualification: AEC-Q101
Grade: Automotive
auf Bestellung 30649 Stücke:
Lieferzeit 10-14 Tag (e)
| Anzahl | Preis |
|---|---|
| 11+ | 1.71 EUR |
| 15+ | 1.2 EUR |
| 100+ | 0.79 EUR |
| 500+ | 0.62 EUR |
| NVMFS021N10MCLT1G |
|
Hersteller: onsemi
MOSFETs Single N-Channel Power MOSFET 100 V, 31 A, 23 mohm
MOSFETs Single N-Channel Power MOSFET 100 V, 31 A, 23 mohm
auf Bestellung 4452 Stücke:
Lieferzeit 10-14 Tag (e)
| Anzahl | Preis |
|---|---|
| 2+ | 1.74 EUR |
| 10+ | 1.19 EUR |
| 100+ | 0.8 EUR |
| 500+ | 0.63 EUR |
| 1000+ | 0.6 EUR |
| 1500+ | 0.45 EUR |
| NVMFS021N10MCLT1G |
|
Hersteller: ONN
auf Bestellung 3000 Stücke:
Lieferzeit 21-28 Tag (e)