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Technische Details NVMFS5A160PLZWFT1G ON Semiconductor
Description: MOSFET P-CH 60V 15A/100A 5DFN, Rds On (Max) @ Id, Vgs: 7.7mOhm @ 50A, 10V, Current - Continuous Drain (Id) @ 25°C: 15A (Ta), 100A (Tc), FET Type: P-Channel, Technology: MOSFET (Metal Oxide), Operating Temperature: -55°C ~ 175°C (TJ), Mounting Type: Surface Mount, Package / Case: 8-PowerTDFN, 5 Leads, Packaging: Tape & Reel (TR), Qualification: AEC-Q101, Grade: Automotive, Input Capacitance (Ciss) (Max) @ Vds: 7700 pF @ 20 V, Gate Charge (Qg) (Max) @ Vgs: 160 nC @ 10 V, Drain to Source Voltage (Vdss): 60 V, Vgs (Max): ±20V, Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V, Part Status: Obsolete, Supplier Device Package: 5-DFN (5x6) (8-SOFL), Vgs(th) (Max) @ Id: 2.6V @ 1mA, Power Dissipation (Max): 3.8W (Ta), 200W (Tc).
Weitere Produktangebote NVMFS5A160PLZWFT1G
| Foto | Bezeichnung | Hersteller | Beschreibung |
Verfügbarkeit |
Preis |
|---|---|---|---|---|---|
|
NVMFS5A160PLZWFT1G | onsemi |
Description: MOSFET P-CH 60V 15A/100A 5DFNRds On (Max) @ Id, Vgs: 7.7mOhm @ 50A, 10V Current - Continuous Drain (Id) @ 25°C: 15A (Ta), 100A (Tc) FET Type: P-Channel Technology: MOSFET (Metal Oxide) Operating Temperature: -55°C ~ 175°C (TJ) Mounting Type: Surface Mount Package / Case: 8-PowerTDFN, 5 Leads Packaging: Tape & Reel (TR) Qualification: AEC-Q101 Grade: Automotive Input Capacitance (Ciss) (Max) @ Vds: 7700 pF @ 20 V Gate Charge (Qg) (Max) @ Vgs: 160 nC @ 10 V Drain to Source Voltage (Vdss): 60 V Vgs (Max): ±20V Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V Part Status: Obsolete Supplier Device Package: 5-DFN (5x6) (8-SOFL) Vgs(th) (Max) @ Id: 2.6V @ 1mA Power Dissipation (Max): 3.8W (Ta), 200W (Tc) |
Produkt ist nicht verfügbar |
Im Einkaufswagen Stück im Wert von UAH |
|
NVMFS5A160PLZWFT1G | onsemi |
Description: MOSFET P-CH 60V 15A/100A 5DFNQualification: AEC-Q101 Grade: Automotive Input Capacitance (Ciss) (Max) @ Vds: 7700 pF @ 20 V Gate Charge (Qg) (Max) @ Vgs: 160 nC @ 10 V Drain to Source Voltage (Vdss): 60 V Vgs (Max): ±20V Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V Part Status: Obsolete Supplier Device Package: 5-DFN (5x6) (8-SOFL) Vgs(th) (Max) @ Id: 2.6V @ 1mA Power Dissipation (Max): 3.8W (Ta), 200W (Tc) Rds On (Max) @ Id, Vgs: 7.7mOhm @ 50A, 10V Current - Continuous Drain (Id) @ 25°C: 15A (Ta), 100A (Tc) FET Type: P-Channel Technology: MOSFET (Metal Oxide) Operating Temperature: -55°C ~ 175°C (TJ) Mounting Type: Surface Mount Package / Case: 8-PowerTDFN, 5 Leads Packaging: Cut Tape (CT) |
Produkt ist nicht verfügbar |
Im Einkaufswagen Stück im Wert von UAH |
| NVMFS5A160PLZWFT1G |
![]() |
Hersteller: onsemi
Description: MOSFET P-CH 60V 15A/100A 5DFN
Rds On (Max) @ Id, Vgs: 7.7mOhm @ 50A, 10V
Current - Continuous Drain (Id) @ 25°C: 15A (Ta), 100A (Tc)
FET Type: P-Channel
Technology: MOSFET (Metal Oxide)
Operating Temperature: -55°C ~ 175°C (TJ)
Mounting Type: Surface Mount
Package / Case: 8-PowerTDFN, 5 Leads
Packaging: Tape & Reel (TR)
Qualification: AEC-Q101
Grade: Automotive
Input Capacitance (Ciss) (Max) @ Vds: 7700 pF @ 20 V
Gate Charge (Qg) (Max) @ Vgs: 160 nC @ 10 V
Drain to Source Voltage (Vdss): 60 V
Vgs (Max): ±20V
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Part Status: Obsolete
Supplier Device Package: 5-DFN (5x6) (8-SOFL)
Vgs(th) (Max) @ Id: 2.6V @ 1mA
Power Dissipation (Max): 3.8W (Ta), 200W (Tc)
Description: MOSFET P-CH 60V 15A/100A 5DFN
Rds On (Max) @ Id, Vgs: 7.7mOhm @ 50A, 10V
Current - Continuous Drain (Id) @ 25°C: 15A (Ta), 100A (Tc)
FET Type: P-Channel
Technology: MOSFET (Metal Oxide)
Operating Temperature: -55°C ~ 175°C (TJ)
Mounting Type: Surface Mount
Package / Case: 8-PowerTDFN, 5 Leads
Packaging: Tape & Reel (TR)
Qualification: AEC-Q101
Grade: Automotive
Input Capacitance (Ciss) (Max) @ Vds: 7700 pF @ 20 V
Gate Charge (Qg) (Max) @ Vgs: 160 nC @ 10 V
Drain to Source Voltage (Vdss): 60 V
Vgs (Max): ±20V
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Part Status: Obsolete
Supplier Device Package: 5-DFN (5x6) (8-SOFL)
Vgs(th) (Max) @ Id: 2.6V @ 1mA
Power Dissipation (Max): 3.8W (Ta), 200W (Tc)
Produkt ist nicht verfügbar
Im Einkaufswagen
Stück im Wert von UAH
| NVMFS5A160PLZWFT1G |
![]() |
Hersteller: onsemi
Description: MOSFET P-CH 60V 15A/100A 5DFN
Qualification: AEC-Q101
Grade: Automotive
Input Capacitance (Ciss) (Max) @ Vds: 7700 pF @ 20 V
Gate Charge (Qg) (Max) @ Vgs: 160 nC @ 10 V
Drain to Source Voltage (Vdss): 60 V
Vgs (Max): ±20V
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Part Status: Obsolete
Supplier Device Package: 5-DFN (5x6) (8-SOFL)
Vgs(th) (Max) @ Id: 2.6V @ 1mA
Power Dissipation (Max): 3.8W (Ta), 200W (Tc)
Rds On (Max) @ Id, Vgs: 7.7mOhm @ 50A, 10V
Current - Continuous Drain (Id) @ 25°C: 15A (Ta), 100A (Tc)
FET Type: P-Channel
Technology: MOSFET (Metal Oxide)
Operating Temperature: -55°C ~ 175°C (TJ)
Mounting Type: Surface Mount
Package / Case: 8-PowerTDFN, 5 Leads
Packaging: Cut Tape (CT)
Description: MOSFET P-CH 60V 15A/100A 5DFN
Qualification: AEC-Q101
Grade: Automotive
Input Capacitance (Ciss) (Max) @ Vds: 7700 pF @ 20 V
Gate Charge (Qg) (Max) @ Vgs: 160 nC @ 10 V
Drain to Source Voltage (Vdss): 60 V
Vgs (Max): ±20V
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Part Status: Obsolete
Supplier Device Package: 5-DFN (5x6) (8-SOFL)
Vgs(th) (Max) @ Id: 2.6V @ 1mA
Power Dissipation (Max): 3.8W (Ta), 200W (Tc)
Rds On (Max) @ Id, Vgs: 7.7mOhm @ 50A, 10V
Current - Continuous Drain (Id) @ 25°C: 15A (Ta), 100A (Tc)
FET Type: P-Channel
Technology: MOSFET (Metal Oxide)
Operating Temperature: -55°C ~ 175°C (TJ)
Mounting Type: Surface Mount
Package / Case: 8-PowerTDFN, 5 Leads
Packaging: Cut Tape (CT)
Produkt ist nicht verfügbar
Im Einkaufswagen
Stück im Wert von UAH


