| Anzahl | Preis |
|---|---|
| 1+ | 4.88 EUR |
| 10+ | 3.29 EUR |
| 100+ | 2.34 EUR |
| 500+ | 2.09 EUR |
| 1000+ | 2.01 EUR |
| 1500+ | 1.78 EUR |
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Technische Details NVMFS5C430NWFAFT1G onsemi
Description: MOSFET N-CH 40V 35A/185A 5DFN, Packaging: Tape & Reel (TR), Package / Case: 8-PowerTDFN, 5 Leads, Mounting Type: Surface Mount, Wettable Flank, Operating Temperature: -55°C ~ 175°C (TJ), Technology: MOSFET (Metal Oxide), FET Type: N-Channel, Current - Continuous Drain (Id) @ 25°C: 35A (Ta), 185A (Tc), Rds On (Max) @ Id, Vgs: 1.7mOhm @ 50A, 10V, Power Dissipation (Max): 3.8W (Ta), 106W (Tc), Vgs(th) (Max) @ Id: 3.5V @ 250µA, Supplier Device Package: 5-DFNW (4.9x5.9) (8-SOFL-WF), Grade: Automotive, Drive Voltage (Max Rds On, Min Rds On): 10V, Vgs (Max): ±20V, Drain to Source Voltage (Vdss): 40 V, Gate Charge (Qg) (Max) @ Vgs: 47 nC @ 10 V, Input Capacitance (Ciss) (Max) @ Vds: 3300 pF @ 25 V, Qualification: AEC-Q101.
Weitere Produktangebote NVMFS5C430NWFAFT1G nach Preis ab 2.12 EUR bis 5.28 EUR
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NVMFS5C430NWFAFT1G | onsemi |
 Description: MOSFET N-CH 40V 35A/185A 5DFNInput Capacitance (Ciss) (Max) @ Vds: 3300 pF @ 25 V Gate Charge (Qg) (Max) @ Vgs: 47 nC @ 10 V Drain to Source Voltage (Vdss): 40 V Qualification: AEC-Q101 Grade: Automotive Vgs (Max): ±20V Drive Voltage (Max Rds On, Min Rds On): 10V Supplier Device Package: 5-DFNW (4.9x5.9) (8-SOFL-WF) Vgs(th) (Max) @ Id: 3.5V @ 250µA Power Dissipation (Max): 3.8W (Ta), 106W (Tc) Rds On (Max) @ Id, Vgs: 1.7mOhm @ 50A, 10V Current - Continuous Drain (Id) @ 25°C: 35A (Ta), 185A (Tc) FET Type: N-Channel Technology: MOSFET (Metal Oxide) Operating Temperature: -55°C ~ 175°C (TJ) Mounting Type: Surface Mount, Wettable Flank Package / Case: 8-PowerTDFN, 5 Leads Packaging: Cut Tape (CT) |
auf Bestellung 1480 Stücke: Lieferzeit 10-14 Tag (e) |
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| NVMFS5C430NWFAFT1G | ONN |
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auf Bestellung 1500 Stücke: Lieferzeit 21-28 Tag (e) |
Im Einkaufswagen Stück im Wert von UAH |
| NVMFS5C430NWFAFT1G |
|
Hersteller: onsemi
Description: MOSFET N-CH 40V 35A/185A 5DFN
Input Capacitance (Ciss) (Max) @ Vds: 3300 pF @ 25 V
Gate Charge (Qg) (Max) @ Vgs: 47 nC @ 10 V
Drain to Source Voltage (Vdss): 40 V
Qualification: AEC-Q101
Grade: Automotive
Vgs (Max): ±20V
Drive Voltage (Max Rds On, Min Rds On): 10V
Supplier Device Package: 5-DFNW (4.9x5.9) (8-SOFL-WF)
Vgs(th) (Max) @ Id: 3.5V @ 250µA
Power Dissipation (Max): 3.8W (Ta), 106W (Tc)
Rds On (Max) @ Id, Vgs: 1.7mOhm @ 50A, 10V
Current - Continuous Drain (Id) @ 25°C: 35A (Ta), 185A (Tc)
FET Type: N-Channel
Technology: MOSFET (Metal Oxide)
Operating Temperature: -55°C ~ 175°C (TJ)
Mounting Type: Surface Mount, Wettable Flank
Package / Case: 8-PowerTDFN, 5 Leads
Packaging: Cut Tape (CT)
Description: MOSFET N-CH 40V 35A/185A 5DFN
Input Capacitance (Ciss) (Max) @ Vds: 3300 pF @ 25 V
Gate Charge (Qg) (Max) @ Vgs: 47 nC @ 10 V
Drain to Source Voltage (Vdss): 40 V
Qualification: AEC-Q101
Grade: Automotive
Vgs (Max): ±20V
Drive Voltage (Max Rds On, Min Rds On): 10V
Supplier Device Package: 5-DFNW (4.9x5.9) (8-SOFL-WF)
Vgs(th) (Max) @ Id: 3.5V @ 250µA
Power Dissipation (Max): 3.8W (Ta), 106W (Tc)
Rds On (Max) @ Id, Vgs: 1.7mOhm @ 50A, 10V
Current - Continuous Drain (Id) @ 25°C: 35A (Ta), 185A (Tc)
FET Type: N-Channel
Technology: MOSFET (Metal Oxide)
Operating Temperature: -55°C ~ 175°C (TJ)
Mounting Type: Surface Mount, Wettable Flank
Package / Case: 8-PowerTDFN, 5 Leads
Packaging: Cut Tape (CT)
auf Bestellung 1480 Stücke:
Lieferzeit 10-14 Tag (e)
| Anzahl | Preis |
|---|---|
| 4+ | 5.28 EUR |
| 10+ | 3.54 EUR |
| 100+ | 2.53 EUR |
| 500+ | 2.12 EUR |
| NVMFS5C430NWFAFT1G |
|
Hersteller: ONN
auf Bestellung 1500 Stücke:
Lieferzeit 21-28 Tag (e)