
NVMFS5C442NLWFAFT1G onsemi

Description: MOSFET N-CH 40V 29A/130A 5DFN
Packaging: Tape & Reel (TR)
Package / Case: 8-PowerTDFN, 5 Leads
Mounting Type: Surface Mount, Wettable Flank
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 29A (Ta), 130A (Tc)
Rds On (Max) @ Id, Vgs: 2.5mOhm @ 50A, 10V
Power Dissipation (Max): 3.7W (Ta), 83W (Tc)
Vgs(th) (Max) @ Id: 2V @ 250µA
Supplier Device Package: 5-DFNW (4.9x5.9) (8-SOFL-WF)
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 40 V
Gate Charge (Qg) (Max) @ Vgs: 50 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 3100 pF @ 25 V
Grade: Automotive
Qualification: AEC-Q101
auf Bestellung 4500 Stücke:
Lieferzeit 10-14 Tag (e)
Anzahl | Preis |
---|---|
1500+ | 1.57 EUR |
3000+ | 1.54 EUR |
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Technische Details NVMFS5C442NLWFAFT1G onsemi
Description: MOSFET N-CH 40V 29A/130A 5DFN, Packaging: Tape & Reel (TR), Package / Case: 8-PowerTDFN, 5 Leads, Mounting Type: Surface Mount, Wettable Flank, Operating Temperature: -55°C ~ 175°C (TJ), Technology: MOSFET (Metal Oxide), FET Type: N-Channel, Current - Continuous Drain (Id) @ 25°C: 29A (Ta), 130A (Tc), Rds On (Max) @ Id, Vgs: 2.5mOhm @ 50A, 10V, Power Dissipation (Max): 3.7W (Ta), 83W (Tc), Vgs(th) (Max) @ Id: 2V @ 250µA, Supplier Device Package: 5-DFNW (4.9x5.9) (8-SOFL-WF), Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V, Vgs (Max): ±20V, Drain to Source Voltage (Vdss): 40 V, Gate Charge (Qg) (Max) @ Vgs: 50 nC @ 10 V, Input Capacitance (Ciss) (Max) @ Vds: 3100 pF @ 25 V, Grade: Automotive, Qualification: AEC-Q101.
Weitere Produktangebote NVMFS5C442NLWFAFT1G nach Preis ab 1.64 EUR bis 4.89 EUR
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NVMFS5C442NLWFAFT1G | Hersteller : onsemi |
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auf Bestellung 1 Stücke: Lieferzeit 10-14 Tag (e) |
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NVMFS5C442NLWFAFT1G | Hersteller : onsemi |
![]() Packaging: Cut Tape (CT) Package / Case: 8-PowerTDFN, 5 Leads Mounting Type: Surface Mount, Wettable Flank Operating Temperature: -55°C ~ 175°C (TJ) Technology: MOSFET (Metal Oxide) FET Type: N-Channel Current - Continuous Drain (Id) @ 25°C: 29A (Ta), 130A (Tc) Rds On (Max) @ Id, Vgs: 2.5mOhm @ 50A, 10V Power Dissipation (Max): 3.7W (Ta), 83W (Tc) Vgs(th) (Max) @ Id: 2V @ 250µA Supplier Device Package: 5-DFNW (4.9x5.9) (8-SOFL-WF) Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V Vgs (Max): ±20V Drain to Source Voltage (Vdss): 40 V Gate Charge (Qg) (Max) @ Vgs: 50 nC @ 10 V Input Capacitance (Ciss) (Max) @ Vds: 3100 pF @ 25 V Grade: Automotive Qualification: AEC-Q101 |
auf Bestellung 5265 Stücke: Lieferzeit 10-14 Tag (e) |
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NVMFS5C442NLWFAFT1G | Hersteller : ON Semiconductor |
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