| Anzahl | Preis |
|---|---|
| 1+ | 4.17 EUR |
| 10+ | 2.71 EUR |
| 100+ | 1.87 EUR |
| 500+ | 1.51 EUR |
| 1000+ | 1.43 EUR |
| 1500+ | 1.42 EUR |
Produktrezensionen
Produktbewertung abgeben
Technische Details NVMFS5C442NWFAFT1G onsemi
Description: MOSFET N-CH 40V 29A/140A 5DFN, FET Type: N-Channel, Technology: MOSFET (Metal Oxide), Operating Temperature: -55°C ~ 175°C (TJ), Mounting Type: Surface Mount, Wettable Flank, Package / Case: 8-PowerTDFN, 5 Leads, Packaging: Tape & Reel (TR), Input Capacitance (Ciss) (Max) @ Vds: 2100 pF @ 25 V, Gate Charge (Qg) (Max) @ Vgs: 32 nC @ 10 V, Drain to Source Voltage (Vdss): 40 V, Vgs (Max): ±20V, Drive Voltage (Max Rds On, Min Rds On): 10V, Supplier Device Package: 5-DFNW (4.9x5.9) (8-SOFL-WF), Vgs(th) (Max) @ Id: 4V @ 250µA, Power Dissipation (Max): 3.7W (Ta), 83W (Tc), Rds On (Max) @ Id, Vgs: 2.3mOhm @ 50A, 10V, Current - Continuous Drain (Id) @ 25°C: 29A (Ta), 140A (Tc), Qualification: AEC-Q101, Grade: Automotive.
Weitere Produktangebote NVMFS5C442NWFAFT1G
| Foto | Bezeichnung | Hersteller | Beschreibung |
Verfügbarkeit |
Preis |
|---|---|---|---|---|---|
 |
NVMFS5C442NWFAFT1G | onsemi |
 Description: MOSFET N-CH 40V 29A/140A 5DFNFET Type: N-Channel Technology: MOSFET (Metal Oxide) Operating Temperature: -55°C ~ 175°C (TJ) Mounting Type: Surface Mount, Wettable Flank Package / Case: 8-PowerTDFN, 5 Leads Packaging: Tape & Reel (TR) Input Capacitance (Ciss) (Max) @ Vds: 2100 pF @ 25 V Gate Charge (Qg) (Max) @ Vgs: 32 nC @ 10 V Drain to Source Voltage (Vdss): 40 V Vgs (Max): ±20V Drive Voltage (Max Rds On, Min Rds On): 10V Supplier Device Package: 5-DFNW (4.9x5.9) (8-SOFL-WF) Vgs(th) (Max) @ Id: 4V @ 250µA Power Dissipation (Max): 3.7W (Ta), 83W (Tc) Rds On (Max) @ Id, Vgs: 2.3mOhm @ 50A, 10V Current - Continuous Drain (Id) @ 25°C: 29A (Ta), 140A (Tc) Qualification: AEC-Q101 Grade: Automotive |
Produkt ist nicht verfügbar |
Mindestbestellmenge: 1500 Stücke Im Einkaufswagen Stück im Wert von UAH |
|
|
NVMFS5C442NWFAFT1G | onsemi |
Description: MOSFET N-CH 40V 29A/140A 5DFN Input Capacitance (Ciss) (Max) @ Vds: 2100 pF @ 25 V Gate Charge (Qg) (Max) @ Vgs: 32 nC @ 10 V Drain to Source Voltage (Vdss): 40 V Vgs (Max): ±20V Drive Voltage (Max Rds On, Min Rds On): 10V Supplier Device Package: 5-DFNW (4.9x5.9) (8-SOFL-WF) Vgs(th) (Max) @ Id: 4V @ 250µA Power Dissipation (Max): 3.7W (Ta), 83W (Tc) Rds On (Max) @ Id, Vgs: 2.3mOhm @ 50A, 10V Current - Continuous Drain (Id) @ 25°C: 29A (Ta), 140A (Tc) FET Type: N-Channel Technology: MOSFET (Metal Oxide) Operating Temperature: -55°C ~ 175°C (TJ) Mounting Type: Surface Mount, Wettable Flank Package / Case: 8-PowerTDFN, 5 Leads Packaging: Cut Tape (CT) Qualification: AEC-Q101 Grade: Automotive |
Produkt ist nicht verfügbar |
Im Einkaufswagen Stück im Wert von UAH |
| NVMFS5C442NWFAFT1G |
|
Hersteller: onsemi
Description: MOSFET N-CH 40V 29A/140A 5DFN
FET Type: N-Channel
Technology: MOSFET (Metal Oxide)
Operating Temperature: -55°C ~ 175°C (TJ)
Mounting Type: Surface Mount, Wettable Flank
Package / Case: 8-PowerTDFN, 5 Leads
Packaging: Tape & Reel (TR)
Input Capacitance (Ciss) (Max) @ Vds: 2100 pF @ 25 V
Gate Charge (Qg) (Max) @ Vgs: 32 nC @ 10 V
Drain to Source Voltage (Vdss): 40 V
Vgs (Max): ±20V
Drive Voltage (Max Rds On, Min Rds On): 10V
Supplier Device Package: 5-DFNW (4.9x5.9) (8-SOFL-WF)
Vgs(th) (Max) @ Id: 4V @ 250µA
Power Dissipation (Max): 3.7W (Ta), 83W (Tc)
Rds On (Max) @ Id, Vgs: 2.3mOhm @ 50A, 10V
Current - Continuous Drain (Id) @ 25°C: 29A (Ta), 140A (Tc)
Qualification: AEC-Q101
Grade: Automotive
Description: MOSFET N-CH 40V 29A/140A 5DFN
FET Type: N-Channel
Technology: MOSFET (Metal Oxide)
Operating Temperature: -55°C ~ 175°C (TJ)
Mounting Type: Surface Mount, Wettable Flank
Package / Case: 8-PowerTDFN, 5 Leads
Packaging: Tape & Reel (TR)
Input Capacitance (Ciss) (Max) @ Vds: 2100 pF @ 25 V
Gate Charge (Qg) (Max) @ Vgs: 32 nC @ 10 V
Drain to Source Voltage (Vdss): 40 V
Vgs (Max): ±20V
Drive Voltage (Max Rds On, Min Rds On): 10V
Supplier Device Package: 5-DFNW (4.9x5.9) (8-SOFL-WF)
Vgs(th) (Max) @ Id: 4V @ 250µA
Power Dissipation (Max): 3.7W (Ta), 83W (Tc)
Rds On (Max) @ Id, Vgs: 2.3mOhm @ 50A, 10V
Current - Continuous Drain (Id) @ 25°C: 29A (Ta), 140A (Tc)
Qualification: AEC-Q101
Grade: Automotive
Produkt ist nicht verfügbar
Mindestbestellmenge: 1500 Stücke
Im Einkaufswagen
Stück im Wert von UAH
| NVMFS5C442NWFAFT1G |
|
Hersteller: onsemi
Description: MOSFET N-CH 40V 29A/140A 5DFN
Input Capacitance (Ciss) (Max) @ Vds: 2100 pF @ 25 V
Gate Charge (Qg) (Max) @ Vgs: 32 nC @ 10 V
Drain to Source Voltage (Vdss): 40 V
Vgs (Max): ±20V
Drive Voltage (Max Rds On, Min Rds On): 10V
Supplier Device Package: 5-DFNW (4.9x5.9) (8-SOFL-WF)
Vgs(th) (Max) @ Id: 4V @ 250µA
Power Dissipation (Max): 3.7W (Ta), 83W (Tc)
Rds On (Max) @ Id, Vgs: 2.3mOhm @ 50A, 10V
Current - Continuous Drain (Id) @ 25°C: 29A (Ta), 140A (Tc)
FET Type: N-Channel
Technology: MOSFET (Metal Oxide)
Operating Temperature: -55°C ~ 175°C (TJ)
Mounting Type: Surface Mount, Wettable Flank
Package / Case: 8-PowerTDFN, 5 Leads
Packaging: Cut Tape (CT)
Qualification: AEC-Q101
Grade: Automotive
Description: MOSFET N-CH 40V 29A/140A 5DFN
Input Capacitance (Ciss) (Max) @ Vds: 2100 pF @ 25 V
Gate Charge (Qg) (Max) @ Vgs: 32 nC @ 10 V
Drain to Source Voltage (Vdss): 40 V
Vgs (Max): ±20V
Drive Voltage (Max Rds On, Min Rds On): 10V
Supplier Device Package: 5-DFNW (4.9x5.9) (8-SOFL-WF)
Vgs(th) (Max) @ Id: 4V @ 250µA
Power Dissipation (Max): 3.7W (Ta), 83W (Tc)
Rds On (Max) @ Id, Vgs: 2.3mOhm @ 50A, 10V
Current - Continuous Drain (Id) @ 25°C: 29A (Ta), 140A (Tc)
FET Type: N-Channel
Technology: MOSFET (Metal Oxide)
Operating Temperature: -55°C ~ 175°C (TJ)
Mounting Type: Surface Mount, Wettable Flank
Package / Case: 8-PowerTDFN, 5 Leads
Packaging: Cut Tape (CT)
Qualification: AEC-Q101
Grade: Automotive
Produkt ist nicht verfügbar
Im Einkaufswagen
Stück im Wert von UAH