NVMFS5C450NAFT1G onsemi
Hersteller: onsemiDescription: MOSFET N-CH 40V 24A/102A 5DFN
Packaging: Tape & Reel (TR)
Package / Case: 8-PowerTDFN, 5 Leads
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 24A (Ta), 102A (Tc)
Rds On (Max) @ Id, Vgs: 3.3mOhm @ 50A, 10V
Power Dissipation (Max): 3.6W (Ta), 68W (Tc)
Vgs(th) (Max) @ Id: 3.5V @ 65µA
Supplier Device Package: 5-DFN (5x6) (8-SOFL)
Grade: Automotive
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 40 V
Gate Charge (Qg) (Max) @ Vgs: 23 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 1600 pF @ 25 V
Qualification: AEC-Q101
auf Bestellung 111000 Stücke:
Lieferzeit 10-14 Tag (e)
| Anzahl | Preis |
|---|---|
| 1500+ | 0.77 EUR |
| 3000+ | 0.76 EUR |
Produktrezensionen
Produktbewertung abgeben
Technische Details NVMFS5C450NAFT1G onsemi
Description: MOSFET N-CH 40V 24A/102A 5DFN, Packaging: Tape & Reel (TR), Package / Case: 8-PowerTDFN, 5 Leads, Mounting Type: Surface Mount, Operating Temperature: -55°C ~ 175°C (TJ), Technology: MOSFET (Metal Oxide), FET Type: N-Channel, Current - Continuous Drain (Id) @ 25°C: 24A (Ta), 102A (Tc), Rds On (Max) @ Id, Vgs: 3.3mOhm @ 50A, 10V, Power Dissipation (Max): 3.6W (Ta), 68W (Tc), Vgs(th) (Max) @ Id: 3.5V @ 65µA, Supplier Device Package: 5-DFN (5x6) (8-SOFL), Grade: Automotive, Drive Voltage (Max Rds On, Min Rds On): 10V, Vgs (Max): ±20V, Drain to Source Voltage (Vdss): 40 V, Gate Charge (Qg) (Max) @ Vgs: 23 nC @ 10 V, Input Capacitance (Ciss) (Max) @ Vds: 1600 pF @ 25 V, Qualification: AEC-Q101.
Weitere Produktangebote NVMFS5C450NAFT1G nach Preis ab 0.71 EUR bis 2.04 EUR
| Foto | Bezeichnung | Hersteller | Beschreibung |
Verfügbarkeit |
Preis | ||||||||||||||||
|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|
 |
NVMFS5C450NAFT1G | Hersteller : onsemi |
MOSFETs T6-D3F 40V NFET |
auf Bestellung 11200 Stücke: Lieferzeit 10-14 Tag (e) |
|
||||||||||||||||
|
|
NVMFS5C450NAFT1G | Hersteller : onsemi |
Description: MOSFET N-CH 40V 24A/102A 5DFN Packaging: Cut Tape (CT) Package / Case: 8-PowerTDFN, 5 Leads Mounting Type: Surface Mount Operating Temperature: -55°C ~ 175°C (TJ) Technology: MOSFET (Metal Oxide) FET Type: N-Channel Current - Continuous Drain (Id) @ 25°C: 24A (Ta), 102A (Tc) Rds On (Max) @ Id, Vgs: 3.3mOhm @ 50A, 10V Power Dissipation (Max): 3.6W (Ta), 68W (Tc) Vgs(th) (Max) @ Id: 3.5V @ 65µA Supplier Device Package: 5-DFN (5x6) (8-SOFL) Grade: Automotive Drive Voltage (Max Rds On, Min Rds On): 10V Vgs (Max): ±20V Drain to Source Voltage (Vdss): 40 V Gate Charge (Qg) (Max) @ Vgs: 23 nC @ 10 V Input Capacitance (Ciss) (Max) @ Vds: 1600 pF @ 25 V Qualification: AEC-Q101 |
auf Bestellung 112306 Stücke: Lieferzeit 10-14 Tag (e) |
|
||||||||||||||||
 |
NVMFS5C450NAFT1G | Hersteller : ON Semiconductor |
Trans MOSFET N-CH 40V 24A 5-Pin SO-FL EP T/R Automotive AEC-Q101 |
Produkt ist nicht verfügbar |
|||||||||||||||||
 |
NVMFS5C450NAFT1G | Hersteller : ON Semiconductor |
Trans MOSFET N-CH 40V 24A Automotive AEC-Q101 5-Pin SO-FL EP T/R |
Produkt ist nicht verfügbar |
|||||||||||||||||
| NVMFS5C450NAFT1G | Hersteller : ONSEMI |
Category: SMD N channel transistors Description: Transistor: N-MOSFET; unipolar; 40V; 102A; Idm: 554A; 34W; DFN5 Type of transistor: N-MOSFET Polarisation: unipolar Drain-source voltage: 40V Drain current: 102A Pulsed drain current: 554A Power dissipation: 34W Case: DFN5 Gate-source voltage: ±20V On-state resistance: 3.3mΩ Mounting: SMD Gate charge: 23nC Kind of package: reel; tape Kind of channel: enhancement Anzahl je Verpackung: 1 Stücke |
Produkt ist nicht verfügbar |
||||||||||||||||||
| NVMFS5C450NAFT1G | Hersteller : ONSEMI |
Category: SMD N channel transistors Description: Transistor: N-MOSFET; unipolar; 40V; 102A; Idm: 554A; 34W; DFN5 Type of transistor: N-MOSFET Polarisation: unipolar Drain-source voltage: 40V Drain current: 102A Pulsed drain current: 554A Power dissipation: 34W Case: DFN5 Gate-source voltage: ±20V On-state resistance: 3.3mΩ Mounting: SMD Gate charge: 23nC Kind of package: reel; tape Kind of channel: enhancement |
Produkt ist nicht verfügbar |